In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a...
Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance a...
Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect tra...
This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source g...
In this paper, analysis and optimization of surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation. The SCNW TFET features an ultra-thin tunnel...
In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD)...
Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistor...
The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET...
Metal gate technology is one of the most important methods used to increase the low on-current of tunnel field-effect transistors (TFETs). However, metal gates have different work-functions for each grain during the deposition process, resulting in w...
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to address these challenges, Ge-channel heterostructure TFET with Si...
In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltag...
Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology. In addition, silicon-germanium (SiGe) engineering is shown to improve the performance of TFET...
The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network. In this paper, the ESD characteristics of a traditiona...
This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are f...
In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solution...
This paper investigates the performance of vacuum gate dielectric doping-free carbon nanotube/nanoribbon field-effect transistors (VGD-DL CNT/GNRFETs) via computational analysis employing a quantum simulation approach. The methodology integrates the...
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect,...
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel in...
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages....
Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years. In this paper, a new type of heterostru...
In this work, we report the first systematic examination of how the In composition in the intrinsic InxGa1-xAs layer and the p-type doping concentration in the p-type GaAsSb layer affect the device performance of side-gate p-GaAs0.5Sb0.5/i-InxGa1-xAs...
In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-...
In this article, we propose a dual-gate dielectric face tunnel field-effect transistor (DGDFTFET) that can exhibit three different output voltage states. Meanwhile, according to the requirements of the ternary operation in the ternary inverter, four...
A long-standing goal of nanoelectronics is the development of integrated systems to be used in medicine as sensor, therapeutic, or theranostic devices. In this review, we examine the phenomena of transport and the interaction between electro-active c...
The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel fie...
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because o...
Ion-Sensitive Field-Effect Transistors (ISFETs) have been extensively used to detect various biomolecules, as the intrinsic charge of these molecules can change the transistor’s current or threshold voltage. Recently, realizing ISFET biosensors...
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room tem...
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted attention as promising next-generation electronic devices and sensors. In this study, we fabricated a novel nanoelectronic device based on a black-phosphorus-gated WSe2/SnSe...
A systematic device-model calibration (extraction) methodology has been proposed to reduce parameter calibration time of advanced compact model for modern nano-scale semiconductor devices. The adaptive pattern search algorithm is a variant of the dir...
A new structure for PNPN tunnel field-effect transistors (TFETs) has been designed and simulated in this work. The proposed structure incorporates the polarity bias concept and the gate work function engineering to improve the DC and analog/RF figure...
To address the severe gate-induced drain leakage (GIDL) issue in fully depleted germanium-on-insulator (FD-GeOI) multi-subchannel tunneling field-effect transistors (MS TFETs), this paper proposes a stepped gate oxide (SGO) structure. In the off-stat...
In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state curr...
Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteris...
Tunnel Field-Effect Transistors (TFETs) are being explored for ultra-low-power very-large-scale integrated circuits (VLSI) because their band-to-band tunnelling (BTBT) transport permits subthreshold swings (SS) below the 60 mV/dec thermionic limit at...
In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed and analyzed using technology computer-aided design (TCAD) Sentaurus simulation software. By inserting a ferroelect...
We systematically study the transport properties of arsenene nanoribbon tunneling field-effect transistors (TFETs) along the armchair directions using first-principles calculations based on density functional theory combined with the non-equilibrium...
After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly u...
In this study, a frequency doubler that consists of a tunnel field-effect transistor (TFET) with dual pocket doping is proposed, and its operation is verified using technology computer-aided design (TCAD) simulations. The frequency-doubling operation...
In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET,...
The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET to be experimentally demonstrated. To date, there is no literature available on the compact model of LTFET. In this paper, a compact model of LTFET is pres...
We present a highly sensitive and selective gas sensor based on an advanced silicon-on-insulator tunnel field-effect transistor (SOI-TFET) architecture, enhanced through the integration of customized conducting polymers. In this design, traditional m...
The radiation effects on a multi-nanosheet tunneling-based field effect transistor (NS-TFET) were investigated for a 3-nm technology node using a three-dimensional (3D) technology computer-aided design (TCAD) simulator. An alpha particle was injected...
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the implementation of vertical transistors for digital and high-frequency electroni...
It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of t...
Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in numerical or compact TAT models applied to TFET devices. This work presents a...
To improve the on-state current and reduce the miller capacitance of the conventional junction-less tunneling field effect transistor (JLTFET), the junction-less TFET with Ge/Si0.3Ge0.7/Si heterojunction and heterogeneous gate dielectric (H-JLTFET) i...
Nowadays, the analog and mixed-signal intellectual property (IP) cores play an important role in system on chip (SoC) design due to their capabilities in performing critical functions. These IPs can be the target of adversaries similar to their digit...
Mixed-signal integrated circuits (ICs) play an eminent and critical role in design and development of the embedded systems leveraged within smart weapons and military systems. These ICs can be a golden target for adversaries to compromise in order to...
The device structure of DLTFET is optimized by the Silvaco TCAD software to solve the problems of lower on-state current and larger miller capacitance of traditional doping-less tunneling field effect transistors (DLTFETs), and the performance can be...