Power Semiconductor Devices and Integration Technology
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 30 June 2026 | Viewed by 398
Special Issue Editor
Special Issue Information
Dear Colleagues,
Power semiconductor devices serve a pivotal role in various applications, ranging from renewable energy system to industrial automation, consumer electronics, data center, rail transportation, aerospace, smart grids, and more. High voltage, low power consumption, high frequency, and high reliability becomes undoubtedly important amidst the global energy transitions and smart manufacturing trends. On the one hand, traditional silicon-based power devices and integration technologies still play a crucial role because of their low cost, mature technologies and high market share. On the other hand, wide bandgap semiconductors (e.g., silicon carbide SiC, gallium nitride GaN, gallium oxide GaO, etc.) offer advantages of high breakdown field strength and low loss, significantly enhancing efficiency and power density. This Special Issue tends to provide a platform to gather novel findings and developments with a target of power semiconductor devices and integration technology with high-power density, low loss, and high reliability.
Dr. Jie Wei
Guest Editor
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Keywords
- high voltage devices
- low voltage devices
- power IC device technology
- power IC design
- wide bandgap semiconductor (GaN, SiC, GaO, and so on)
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