Device Modeling for TCAD and Circuit Simulation

Dear Colleagues,

Because CMOS technology has been scaling according to Moore’s law, it is approaching its basic physical limits. In order to replace and expand the current CMOS devices and circuits, various types of new device, such as steep-switching transistors, 2D material transistors, neuromorphic devices, and so on, have been reported. It is necessary to analyze the characteristics of newly proposed devices, and their accurate and physics-based compact models are also needed to efficiently design and simulate the circuits comprising them or CMOSs.

This Special Issue solicits original research papers and review articles with numerical or analytical models of various novel devices based on theoretical approaches for technology computer-aided design (TCAD) and circuit simulations.

Potential topics include, but are not limited to, the following:

• Compact modeling for circuit simulation;
• Device modeling for TCAD simulation;
• Steep-switching device modeling: tunnel field-effect transistor (TFET), negative-capacitance field-effect transistor (NCFET), feedback field-effect transistor (FBFET), and so on;
• FinFET modeling;
• Gate-all-around (GAA) nanowire (NW) FET modeling;
• Ultra-thin silicon-on-insulator (SOI) modeling;
• Two-dimensional material (e.g., MoS₂, WSe₂) transistors modeling;
• Graphene FET modeling;
• Nanowire and nanotube FET modeling;
• Neuromorphic device modeling;
• Volatile memory device modeling;
• Non-volatile memory device modeling;
• Progress in modeling methodology and approaches.

Prof. Yun Seop Yu
Guest Editor

Manuscript Submission Information

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