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Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor

by Jaehong Lee 1,†, Garam Kim 2,† and Sangwan Kim 3,*
1
Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 08826, Korea
2
Department of Electronic Engineering, Myongji University, Yongin 17058, Korea
3
Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea
*
Author to whom correspondence should be addressed.
Both authors contributed equally to this manuscript.
Electronics 2019, 8(12), 1415; https://doi.org/10.3390/electronics8121415
Received: 5 November 2019 / Revised: 25 November 2019 / Accepted: 26 November 2019 / Published: 28 November 2019
(This article belongs to the Section Microelectronics and Optoelectronics)
In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD) simulation and were explained using the concepts of turn-on and inversion voltages. As a result, S decreased, when the back-gate voltage increased; this behavior is attributed to the resultant increase in inversion voltage. In addition, it was found that the on–off current ratio of the TFET increased with a decrease in S due to the back-gate voltage. View Full-Text
Keywords: tunnel field-effect transistor (TFET); band-to-band tunneling; back-gate bias effect tunnel field-effect transistor (TFET); band-to-band tunneling; back-gate bias effect
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Lee, J.; Kim, G.; Kim, S. Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor. Electronics 2019, 8, 1415.

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