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F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application
Open AccessFeature PaperArticle

Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node

Department of Electrical and Electronics Engineering, Konkuk University, Seoul 05029, Korea
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Micromachines 2019, 10(12), 847; https://doi.org/10.3390/mi10120847
Received: 30 October 2019 / Revised: 26 November 2019 / Accepted: 2 December 2019 / Published: 4 December 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
The radiation effects on a multi-nanosheet tunneling-based field effect transistor (NS-TFET) were investigated for a 3-nm technology node using a three-dimensional (3D) technology computer-aided design (TCAD) simulator. An alpha particle was injected into a field effect transistor (FET), which resulted in a drain current fluctuation and caused the integrated circuit to malfunction as the result of a soft-error-rate (SER) issue. It was subsequently observed that radiation effects on NS-TFET were completely different from a conventional drift-diffusion (DD)-based FET. Unlike a conventional DD-based FET, when an alpha particle enters the source and channel areas in the current scenario, a larger drain current fluctuation occurs due to a tunneling mechanism between the source and the channel, and this has a significant effect on the drain current. In addition, as the temperature increases, the radiation effect increases as a result of a decrease in silicon bandgap energy and a resultant increase in band-to-band generation. Finally, the radiation effect was analyzed according to the energy of the alpha particle. These results can provide a guideline by which to design a robust integrated circuit for radiation that is totally different from the conventional DD-FET approach.
Keywords: reliability; radiation effect; alpha particle; nanosheet tunneling field-effect transistor (FET) reliability; radiation effect; alpha particle; nanosheet tunneling field-effect transistor (FET)
MDPI and ACS Style

Hong, J.; Park, J.; Lee, J.; Ham, J.; Park, K.; Jeon, J. Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node. Micromachines 2019, 10, 847.

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