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Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor
Open AccessArticle

F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

1
Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea
2
School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Korea
3
Inter-university Semiconductor Research Center, Department of Electrical and with the Department of Computer Engineering, Seoul National University, Seoul 08826, Korea
4
Department of Electronic Engineering, Myongji University, Yongin 17058, Korea
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(11), 760; https://doi.org/10.3390/mi10110760
Received: 12 October 2019 / Revised: 31 October 2019 / Accepted: 7 November 2019 / Published: 9 November 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (VON) maintaining high on-state current (ION) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower VON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher ION and 7 mV/dec smaller average SS with the same VON as that for L-shaped TFET. View Full-Text
Keywords: band-to-band tunneling; tunnel field-effect transistor (TFET); L-shaped TFET; line tunneling; electric field crowding; corner effect band-to-band tunneling; tunnel field-effect transistor (TFET); L-shaped TFET; line tunneling; electric field crowding; corner effect
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MDPI and ACS Style

Yun, S.; Oh, J.; Kang, S.; Kim, Y.; Kim, J.H.; Kim, G.; Kim, S. F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application. Micromachines 2019, 10, 760.

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