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Open AccessArticle

A Novel Germanium-Around-Source Gate-All-Around tunnelling Field-Effect Transistor for Low-Power Applications

School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China
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Author to whom correspondence should be addressed.
Micromachines 2020, 11(2), 164; https://doi.org/10.3390/mi11020164
Received: 24 December 2019 / Revised: 29 January 2020 / Accepted: 30 January 2020 / Published: 3 February 2020
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate-all-around tunnel field-effect transistors. Furthermore, the electrical characteristics were optimised using Synopsys Sentaurus technology computer-aided design (TCAD). The GAS GAA TFET contains a combination of around-source germanium and silicon, which have different bandgaps. With an increase in the gate-source voltage, band-to-band tunnelling (BTBT) in silicon rapidly approached saturation since germanium has a higher BTBT probability than silicon. At this moment, germanium could still supply current increment, resulting in a steady and steep average subthreshold swing (SSAVG) and a higher ON-state current. The GAS GAA TFET was optimised through work function and drain overlapping engineering. The optimised GAS GAA TFET exhibited a high ON-state current (ION) (11.9 μA), a low OFF-state current (IOFF) (2.85 × 10-9 μA), and a low and steady SSAVG (57.29 mV/decade), with the OFF-state current increasing by 107 times. The GAS GAA TFET has high potential for use in low-power applications.
Keywords: band-to-band tunnelling (BTBT); tunnelling field-effect transistor (TFET); germanium-around-source gate-all-around TFET (GAS GAA TFET); average subthreshold swing band-to-band tunnelling (BTBT); tunnelling field-effect transistor (TFET); germanium-around-source gate-all-around TFET (GAS GAA TFET); average subthreshold swing
MDPI and ACS Style

Han, K.; Long, S.; Deng, Z.; Zhang, Y.; Li, J. A Novel Germanium-Around-Source Gate-All-Around tunnelling Field-Effect Transistor for Low-Power Applications. Micromachines 2020, 11, 164.

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