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Open AccessArticle

Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor

1
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
2
Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea
*
Authors to whom correspondence should be addressed.
Micromachines 2019, 10(11), 753; https://doi.org/10.3390/mi10110753
Received: 5 October 2019 / Revised: 31 October 2019 / Accepted: 1 November 2019 / Published: 3 November 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because of increased off-current due to the large ambipolar current. In this paper, a stacked gate L-shaped TFET is proposed for suppression of ambipolar current. Stacked gates can be easily implemented using the structural features of L-shaped TFET, and on- and off-current can be controlled separately by using different gates located near the source and the drain, respectively. As a result, the suppression of ambipolarity is observed with respect to work function difference between two gates by simulation of the band-to-band tunneling generation. Furthermore, the proposed device suppresses ambipolar current better than existing ambipolar current suppression methods. In particular, low drain resistance is achieved as there is no need to reduce drain doping, which leads to a 7% enhanced on-current. Finally, we present the fabrication method for a stacked gate L-shaped TFET. View Full-Text
Keywords: L-shaped tunnel field-effect transistor; stacked gate; dual work function; ambipolar current L-shaped tunnel field-effect transistor; stacked gate; dual work function; ambipolar current
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MDPI and ACS Style

Yu, J.; Kim, S.; Ryu, D.; Lee, K.; Kim, C.; Lee, J.-H.; Kim, S.; Park, B.-G. Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor. Micromachines 2019, 10, 753.

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