A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors

Chen, Rui; Wang, Liming; Han, Ruizhe; Liao, Keqin; Shi, Xinlong; Zhang, Peijian; Hu, Huiyong

doi:10.3390/mi16040375

Open AccessArticle

A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors

by

Rui Chen

¹

,

Liming Wang

^1,*

,

Ruizhe Han

¹,

Keqin Liao

¹,

Xinlong Shi

¹,

Peijian Zhang

^2,* and

Huiyong Hu

¹

Laboratory of Analog Integrated Circuits, Hangzhou Institute of Technology, Xidian University, Hangzhou 311231, China

²

National Laboratory of Analog Integrated Circuits, Chongqing 400060, China

^*

Authors to whom correspondence should be addressed.

Micromachines 2025, 16(4), 375; https://doi.org/10.3390/mi16040375

Submission received: 25 February 2025 / Revised: 21 March 2025 / Accepted: 25 March 2025 / Published: 26 March 2025

(This article belongs to the Section D1: Semiconductor Devices)

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Abstract

To address the severe gate-induced drain leakage (GIDL) issue in fully depleted germanium-on-insulator (FD-GeOI) multi-subchannel tunneling field-effect transistors (MS TFETs), this paper proposes a stepped gate oxide (SGO) structure. In the off-state, the SGO structure effectively suppresses GIDL by reducing the electric field intensity at the channel/drain interface while simultaneously decreasing gate capacitance to reduce static power consumption. Based on an accurate device model, a systematic investigation was conducted into the effects of varying the thickness and length of the SGO structure on TFET performance, enabling the optimization of the SGO design. The simulation results demonstrate that, compared to normal MS TFETs, the SGO MS TFET reduces the off-state GIDL current (

I_{off}

) from

4.6 \times 10^{- 7}

A to

2.6 \times 10^{- 11}

A, achieving a maximum improvement of 4.22 orders of magnitude in the on-state-to-off-state current ratio (

I_{on} / I_{off}

) and a 28% reduction in subthreshold swing (SS). Furthermore, compared to lightly doped drain (LDD) MS TFETs, the SGO MS TFET achieves a 32% reduction in total gate capacitance and a 23% enhancement in carrier mobility at the channel/drain interface. This study demonstrates that SGO provides an effective solution for GIDL suppression.

Keywords: FD-GeOI; TFET; GIDL; multi-subchannel; stepped gate oxide

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MDPI and ACS Style

Chen, R.; Wang, L.; Han, R.; Liao, K.; Shi, X.; Zhang, P.; Hu, H. A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. Micromachines 2025, 16, 375. https://doi.org/10.3390/mi16040375

AMA Style

Chen R, Wang L, Han R, Liao K, Shi X, Zhang P, Hu H. A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. Micromachines. 2025; 16(4):375. https://doi.org/10.3390/mi16040375

Chicago/Turabian Style

Chen, Rui, Liming Wang, Ruizhe Han, Keqin Liao, Xinlong Shi, Peijian Zhang, and Huiyong Hu. 2025. "A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors" Micromachines 16, no. 4: 375. https://doi.org/10.3390/mi16040375

APA Style

Chen, R., Wang, L., Han, R., Liao, K., Shi, X., Zhang, P., & Hu, H. (2025). A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. Micromachines, 16(4), 375. https://doi.org/10.3390/mi16040375

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

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A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors

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