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Open AccessArticle

Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET

1
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
2
Center for BioMicroSystems, Brain Science Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(11), 749; https://doi.org/10.3390/mi10110749
Received: 14 October 2019 / Revised: 28 October 2019 / Accepted: 30 October 2019 / Published: 31 October 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive band-to-band tunneling (BTBT) area can be achieved compared with the conventional core–shell VNWTFETs. The channel thickness (Tch), the gate-metal height (Hg), and the channel height (Hch) were considered as the design parameters for the optimization of device performances. The designed gate-metal-core VNWTFET exhibits outstanding performance, with an on-state current (Ion) of 80.9 μA/μm, off-state current (Ioff) of 1.09 × 10−12 A/μm, threshold voltage (Vt) of 0.21 V, and subthreshold swing (SS) of 42.8 mV/dec. Therefore, the proposed device was demonstrated to be a promising logic device for low-power applications. View Full-Text
Keywords: tunnel field-effect transistor (TFET); low power; vertical nanowire; core–shell; germanium; technology computer-aided design (TCAD) tunnel field-effect transistor (TFET); low power; vertical nanowire; core–shell; germanium; technology computer-aided design (TCAD)
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Jang, W.D.; Yoon, Y.J.; Cho, M.S.; Jung, J.H.; Lee, S.H.; Jang, J.; Bae, J.-H.; Kang, I.M. Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET. Micromachines 2019, 10, 749.

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