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Micromachines 2019, 10(1), 30; https://doi.org/10.3390/mi10010030

Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

1
Inter-university Semiconductor Research Center, Department of Electrical and with the Department of Computer Engineering, Seoul National University, Seoul 151-744, Korea
2
Department of Electrical and with the Department of Computer Engineering, Seoul National University, Seoul 151-744, Korea
3
Department of Electrical and Computer Engineering, Ajou University, Suwon 16944, Korea
*
Authors to whom correspondence should be addressed.
Received: 22 November 2018 / Revised: 20 December 2018 / Accepted: 4 January 2019 / Published: 7 January 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
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Abstract

In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (ION) and low-level OFF-state current (IOFF); ambipolar current (IAMB). In detail, its ION is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The IAMB can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group’s results. View Full-Text
Keywords: band-to-band tunneling; tunnel field-effect transistor; low operating power device; tunneling resistance; sub- threshold swing; ambipolar current; elevated drain band-to-band tunneling; tunnel field-effect transistor; low operating power device; tunneling resistance; sub- threshold swing; ambipolar current; elevated drain
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Kim, J.H.; Kim, H.W.; Kim, G.; Kim, S.; Park, B.-G. Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain. Micromachines 2019, 10, 30.

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