MEMS/NEMS Devices and Applications, 3rd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".

Deadline for manuscript submissions: 31 December 2025 | Viewed by 362

Special Issue Editors


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Guest Editor
Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan
Interests: CMOS-MEMS; microsensors; microactuators
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Guest Editor Assistant
Department of Bio-Industrial Mechatronics Engineering, National Chung Hsing University, Taichung 402, Taiwan
Interests: MEMS; microsensors; biosensors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Recently, nanoelectromechanical system (NEMS) and microelectromechanical system (MEMS) technologies have been employed to develop various microdevices and microstructures. Many sensors and actuators have been manufactured and commercialized using technologies such as pressure sensors, accelerometers, gyroscopes, tactile sensors, thermal sensors, flow sensors, optical sensors, image sensors, microphones, magnetic sensors, chemical sensors, gas sensors, biosensors, microchannels, ink jet heads, optical switches, RF switches, micromirror, motors, relays, resonators, filters, and energy harvesters. NEMS/MEMS devices have been widely applied in various fields. This Special Issue requests outstanding research on NEMS/MEMS devices and applications. Submissions related to the novel designs, fabrication, development, and applications of various NEMS/MEMS devices, including physical sensors, chemical sensors, gas sensors, biosensors, actuators, energy harvesters, etc., based on NEMS/MEMS technologies are welcome. Review articles and original research articles are equally welcome.

Dr. Ching-Liang Dai
Guest Editor

Dr. Zhi-Xuan Dai
Guest Editor Assistant

Manuscript Submission Information

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Keywords

  • physical sensors
  • force sensors
  • magnetic sensors
  • optical sensors
  • microphones
  • flow sensors
  • thermal sensors
  • chemical sensors
  • biosensors
  • gas sensors
  • actuators
  • resonators/filters
  • switches/relays
  • energy harvesters
  • lens/mirrors

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Published Papers (3 papers)

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Research

13 pages, 4832 KiB  
Article
Enhancement of Quality Factors in a 6.5 GHz Resonator Using Mo/SiC Composite Microstructures
by Binghui Lin, Yupeng Zheng, Haiyang Li, Yuqi Ren, Tingting Yang, Zekai Wang, Yao Cai, Qinwen Xu and Chengliang Sun
Micromachines 2025, 16(5), 529; https://doi.org/10.3390/mi16050529 (registering DOI) - 29 Apr 2025
Abstract
This study addresses the critical challenge of lateral acoustic wave energy leakage in high-frequency film bulk acoustic resonators (FBARs) and elucidates the reflection mechanism of acoustic waves at acoustic reflection boundaries. Based on the theory of acoustic impedance mismatch, a novel Mo/SiC composite [...] Read more.
This study addresses the critical challenge of lateral acoustic wave energy leakage in high-frequency film bulk acoustic resonators (FBARs) and elucidates the reflection mechanism of acoustic waves at acoustic reflection boundaries. Based on the theory of acoustic impedance mismatch, a novel Mo/SiC composite microstructure is designed to strategically establish multiple acoustic reflection boundaries along the lateral acoustic wave leakage paths. Finite element simulations reveal that SiC microstructures effectively suppress vibration amplitudes in non-resonant regions, thereby preventing acoustic wave leakage. By integrating Mo and SiC microstructures, the proposed composite structure significantly enhances the resonator’s acoustic confinement and energy retention capabilities. A resonator incorporating this Mo/SiC composite microstructure is fabricated, achieving a series resonance frequency of 6.488 GHz and a remarkable quality factor (Q) of 310. This represents a substantial 51.2% improvement in Q compared to the basic FBAR, confirming the effectiveness of the proposed design in mitigating lateral acoustic wave leakage and enhancing resonator performance for high-frequency, low-loss applications. This work offers valuable insights into the design of next-generation RF resonators for advanced wireless communication systems. Full article
(This article belongs to the Special Issue MEMS/NEMS Devices and Applications, 3rd Edition)
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19 pages, 14110 KiB  
Article
A 3D DC Electric Field Meter Based on Sensor Chips Packaged Using a Highly Sensitive Scheme
by Pengfei Yang, Xiaolong Wen, Xiaonan Li, Zhaozhi Chu, Chunrong Peng and Shuang Wu
Micromachines 2025, 16(4), 484; https://doi.org/10.3390/mi16040484 - 20 Apr 2025
Viewed by 76
Abstract
This study presents a 3D DC electric field meter (EFM) that uses three identical 1D MEMS chips. The shielding electrodes and sensing electrodes of the MEMS chips employ a combination of rigid frames and short strip-type beams to improve vibrational stability. To enhance [...] Read more.
This study presents a 3D DC electric field meter (EFM) that uses three identical 1D MEMS chips. The shielding electrodes and sensing electrodes of the MEMS chips employ a combination of rigid frames and short strip-type beams to improve vibrational stability. To enhance sensitivity, our MEMS chips feature inner convex packaging covers. Moreover, the integrated design and wireless transmission efficiently eradicate the impact of ground potential on detection results. Detailed simulations have been conducted to analyze the electric field distribution within the chip package and the electric field distribution on the EFM’s surface. A prototype was then developed, calibrated, and validated. The test results indicate that the sensitivity of our proposed 3D EFM is at least 4.64 times higher than the highest sensitivity observed in previously reported MEMS 3D EFMs. The maximum relative deviation is a mere 2.2% for any rotation attitude. Remarkably, even in high humidity conditions, the EFM’s linearity remains within 1%. Additionally, the resolution of any single axis is less than 10 V/m. Full article
(This article belongs to the Special Issue MEMS/NEMS Devices and Applications, 3rd Edition)
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14 pages, 2588 KiB  
Article
Accelerated Electro-Optic Switching in Liquid Crystal Devices via Ion Trapping by Dispersed Helical Carbon Nanotubes
by Rajratan Basu and Christian C. Kehr
Micromachines 2025, 16(4), 457; https://doi.org/10.3390/mi16040457 - 12 Apr 2025
Viewed by 281
Abstract
Free ion impurities in liquid crystals significantly impact the dynamic electro-optic performance of liquid crystal displays, leading to slow switching times, short-term flickering, and long-term image sticking. These ionic contaminants originate from various sources, including LC cell fabrication, electrode degradation, and organic alignment [...] Read more.
Free ion impurities in liquid crystals significantly impact the dynamic electro-optic performance of liquid crystal displays, leading to slow switching times, short-term flickering, and long-term image sticking. These ionic contaminants originate from various sources, including LC cell fabrication, electrode degradation, and organic alignment layers. This study demonstrates that doping LCs with a small concentration of helical carbon nanotubes effectively reduces free ion concentrations by approximately 70%. The resulting reduction in ionic impurities lowers the rotational viscosity of the LC, facilitating faster electro-optic switching. Additionally, the purified LC exhibits enhanced dielectric anisotropy, further improving its performance in display applications. These findings suggest that helical carbon nanotubes doping offers a promising approach for mitigating ion-related issues in liquid crystals without the need for additional chemical treatments, paving the way for an efficient liquid crystal display technology. Full article
(This article belongs to the Special Issue MEMS/NEMS Devices and Applications, 3rd Edition)
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