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Micromachines 2019, 10(2), 77; https://doi.org/10.3390/mi10020077

High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling

1
Department of Electrical and Computer Engineering (ECE), Seoul National University, Gwanak 599, Gwanak-gu, Seoul 151-742, Korea
2
Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea
*
Author to whom correspondence should be addressed.
Both authors contributed equally to this manuscript.
Received: 25 November 2018 / Revised: 16 January 2019 / Accepted: 21 January 2019 / Published: 24 January 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
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Abstract

The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to address these challenges, Ge-channel heterostructure TFET with Si source and drain region is proposed, and its electrical characteristics are compared to other TFET structures. From two-dimensional (2-D) device simulation results, it is confirmed that the Si/Ge heterostructure source junction improves Ion and SS characteristics by using the direct band-to-band tunneling current. Furthermore, the proposed structure shows suppressed ambipolar behavior since the Ge/Si heterostructure is used at the drain junction. View Full-Text
Keywords: tunnel field-effect transistor (TFET); heterojunction; band-to-band tunneling tunnel field-effect transistor (TFET); heterojunction; band-to-band tunneling
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Kim, G.; Lee, J.; Kim, J.H.; Kim, S. High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling. Micromachines 2019, 10, 77.

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