The precise prediction of water inflow in tunnels is a key aspect of civil engineering. It is directly related to the progress of construction, the stability of caverns and the safety of construction personnel. Currently widely used calculation metho...
This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated a...
The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, h...
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate vol...
Cervical cancer remains a public health concern despite all the efforts to implement vaccination and screening programs. Conventional treatment for locally advanced cervical cancer consists of surgery, radiotherapy (with concurrent brachytherapy), co...
This article reports a novel technique based on drain–bulk capacitor modulation to improve the performance design of a class-F power amplifier (PA) used in low-power transceivers based on the I-Q amplitude modulation technique considering linea...
In this paper, we extensively analyzed the drain-induced barrier lowering (DIBL) and leakage current characteristics of the proposed partial isolation field-effect transistor (PiFET) structure. We then compared the PiFET with the conventional planar...
Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to...
Recent advances in wireless communications have favored increasing data rates. For this purpose, complex modulation techniques with high peak-to-average power ratios (PARs) have been introduced. Conventional RF power amplifiers (PAs) provide high eff...
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel in...
This paper presents an electrical thermometry method designed for kilowatt(kW)-level Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The dependence of the drain current on the channel temperature in GaN HEMTs is utilized as a means...
Water transmission pipelines, which transport bulk water into storage facilities, usually have a tree-type configuration with large dimensions; thus, the breakage of a pipeline may cause a catastrophic service interruption to customers. Although drai...
The second-harmonic input impedance plays a critical role on the performance of GaN power amplifiers. In a recent paper, a drain efficiency enhancement for a continuous-mode power amplifiers was reported to be achieved using active broadband second-h...
An electrostatic discharge (ESD) event can negatively affect the reliability of integrated circuits. Therefore, improving on ESD immunity in high-voltage (HV) n-channel (n) lateral diffused metal–oxide–semiconductor field-effect transisto...
This paper presents a novel load modulation network to realize a broadband Doherty power amplifier (DPA). The proposed load modulation network consists of two generalized transmission lines and a modified coupler. A comprehensive theoretical analysis...
A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO2 is used at the drain side of the channel. To improve the carrie...
Device guidelines for reducing power with punch-through current annealing in gate-all-around (GAA) FETs were investigated based on three-dimensional (3D) simulations. We studied and compared how different geometric dimensions and materials of GAA FET...
In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (VTH) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effe...
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges...
Electrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length redu...
In this work, an electrolyte-gated graphene field-effect transistor is developed for Gd3+ ion detection in water. The source and drain electrodes of the transistor are fabricated by photolithography on polyimide, while the graphene channel is obtaine...
In the pursuit of energy-efficient spiking neural network (SNN) hardware, synaptic devices leveraging emerging memory technologies hold significant promise. This study investigates the application of the recently proposed HfO2/SiO2-based interface di...
This paper examines the effect of information and communication technology (ICT) usage on economic growth in the Middle East and North Africa (MENA) region, with a focus on how education levels modulate this relationship. Covering data from 2000 to 2...
To minimize the influence of interface states and surface damage, by inserting a gate oxide layer, the photoelectrochemical oxidation method was utilized to directly grow the gate oxide layer while simultaneously creating the gate-recessed regions on...
Bio field-effect transistors (BioFETs) have attracted attention for their ability to rapidly detect physiological data with a simple structure. While conventional BioFETs offer high sensitivity, they often require reference electrodes or involve comp...
This article presents a new broadband three-way series Doherty power amplifier (DPA) topology, which enables a broadband output power back-off (OBO) efficiency enhancement of up to 10 dB or higher. The proposed DPA topology achieves Doherty load modu...
A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper. InGaAs/GaAsSb heterojunction is applied in HJ-LTFET to enhan...
A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field d...
In this paper, a 3.2–3.6 GHz two-stage Doherty power amplifier (PA) module is proposed for fifth-generation (5G) massive multiple-input multiple-output (MIMO) base stations. A detailed design method and procedure for a compact and low-loss comb...
Optoelectronic logic gates that integrate optical inputs with electrical outputs offer a promising route toward high-bandwidth, low-power in-sensor computing. However, most existing implementations require precise control over the excitation waveleng...
The lymphatic system is a complex network of lymphatic vessels and lymph nodes designed to balance fluid homeostasis and facilitate host immune defence. Neutrophils are rapidly recruited to sites of inflammation to provide the first line of protectio...
Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate straine...
The weak ESD-immunity problem has been deeply persecuted in ultra high-voltage (UHV) metal-oxide-semiconductor field-effect transistors (MOSFETs) and urgently needs to be solved. In this paper, a UHV 300 V circular n-channel (n) lateral diffused MOSF...
Reconfigurable logic is crucial for future adaptive computing, but is challenging to realize with conventional complementary metal-oxide-semiconductor technology due to the limited field-effect characteristics of the fundamental silicon devices. Two-...
In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solution...
Similar to a Doherty power amplifier (DPA), a sequential power amplifier (SPA) is mainly composed of a main amplifier, an auxiliary amplifier and a combiner. However, SPA breaks the bandwidth limitation of the impedance inverter in the DPA, and also...
This study presents an integrated analog front-end (AFE) tailored for photoplethysmography (PPG) sensing. The AFE module introduces a novel transimpedance amplifier (TIA) that incorporates capacitive feedback techniques alongside common drain feedbac...
In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) applic...
This paper presents a 2.4 GHz 20 W 8-channel radio frequency (RF) source module with improved channel output balance. The proposed RF source module is composed of an RF source generation/DC control part, a power amplification part, and a power dividi...
The exceptional adjustability and ambipolar behavior of graphene offer significant potential for next-generation optoelectronics, where the conductivity of graphene is primarily modulated by the interface field of heterojunction. However, interface d...
In this paper, performances of a 4H-SiC UMOSFET with split gate and P+ shielding in different configurations are simulated and compared, with an emphasis on the switching characteristics and short circuit capability. A novel structure with the split...
In this paper, a novel high voltage superjunction lateral double diffused MOSFETs (SJ-LDMOS) using a variable high permittivity (VHK) dielectric trench is presented. A relatively high HK dielectric is in the upper trench, which is connected with the...
With the rapid deployment of artificial intelligence (AI) data centers, demand for optical modules surges—alongside faster upgrades and stricter low-power requirements. However, traditional optical driver integrated circuits (ICs) rely on devic...
Characterizing the impact of the vaccination schedule on the induction of B and T cell immune responses is critical for improving vaccine immunogenicity. Here we compare the effect of a short (4 weeks) or a long (18 weeks) interval between priming an...
This paper presents a novel passive Schottky-diode frequency doubler equipped with an on-off keying (OOK) modulation port to be used in harmonic transponders for both identification and sensing applications. The amplitude modulation of the second-har...
This paper presents a new methodical procedure to monitor in real time the junction temperature of SiC Power MOSFET modules of parallel-connected chips utilized in machine drive systems to develop their reliability modelling and predict their lifetim...
In this study, we propose tunable pH sensors based on the electric-double-layer transistor (EDLT) with time-dependent sensitivity characteristics. The EDLT is able to modulate the drain current by using the mobile ions inside the electrolytic gate di...
Channel length modulation (CLM) in indium gallium zinc oxide (IGZO) thin film transistors (TFTs) reduces the output resistance (ro) in the saturation regime. It also degrades current driving accuracy for active matrix organic light emitting diode (AM...
High-output-current boron-doped diamond (B-diamond) metal–oxide–semiconductor field-effect transistors (MOSFETs) with a modulated boron-doped epitaxial layer were fabricated. An intrinsic diamond epitaxial layer was deposited on the singl...
Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce,sat and turn-off time due to p+ drain and...
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