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2D Materials and Heterostructures: Synthesis, Processing, and Device Applications

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A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (31 July 2026) | Viewed by 8014

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Dr. Filippo Giannazzo

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Consiglio Nazionale delle Ricerche–Institute for Microelectronics and Microsystems (CNR-IMM), Strada VIII, 5 I-95121 Catania, Italy
Interests: 2D materials (graphene, transition metal dichalcogenides); wide bandgap semiconductors (SiC, GaN); high power and high frequency electronics; electrical atomic force microscopy (C-AFM, SCM, SSRM)
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Prof. Dr. Bela Pecz

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HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary
Interests: electron microscopy; 2D materials; compound semiconductors
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Dr. Salvatore Ethan Panasci

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Consiglio Nazionale Delle Ricerche–Istituto per La Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy
Interests: 2D materials (graphene, transition metal dichalcogenides TMDs); atomic force microscopy; Raman/PL spectroscopy
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Special Issue Information

Dear Colleagues,

Two-dimensional layered materials (including graphene, transition metal dichalcogenides (TMDs), boron nitride (h-BN) and more) and their heterostructures are currently the object of extensive scientific research regarding their application in fields such as electronics/optoelectronics, spintronics, quantum technologies, sensing and energy storage/harvesting. In particular, researchers are currently aiming to integrate graphene and TMDs into a Si CMOS platform, using wide-bandgap and ultra-wide bandgap semiconductors technology. However, several challenges, including the use of scalable deposition methods, processing technology (e.g., Ohmic contacts, thin dielectric deposition) and device integration, need to be addressed before 2D materials can be employed in industry. Furthermore, advanced characterization techniques that specifically assess the quality of 2D materials and related devices are urgently needed.

This Special Issue aims to compile review and original research papers that address recent developments in the growth, integration, device processing and advanced characterization of 2D materials.

It is our pleasure to invite you to submit a manuscript to this Special Issue. Full papers, short communications, and reviews are welcome.

Dr. Filippo Giannazzo
Prof. Dr. Bela Pecz
Dr. Salvatore Ethan Panasci
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-anonymized peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

2D materials: graphene, transition metal dichalcogenides, h-BN, Xenes (silicene, stanene, phosphorene, etc.), MXenes, magnetic layered materials
van der Waals heterostructures and 2D alloys
large-area growth methods for 2D materials (CVD, MOCVD, MBE, PLD, ALD)
the advanced characterization of 2D materials and heterostructures (Atomic resolution TEM, Scanning probe Microscopies, Raman, optical and photoelectron spectroscopy, ...)
theoretical modelling
electronic/optoelectronics applications (digital, RF, photodetectors, flexible/wearable electronics)
sensors (environmental, chemical, biomedical applications)
quantum technologies
energy technologies (light harvesting, thermoelectrics, batteries/supercapacitors, hydrogen evolution reaction)

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Published Papers (9 papers)

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Research

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17 pages, 7406 KB

Open AccessArticle

Interfacial Engineering of MoS₂ Thin Films for Wettability-Dependent Resistive Switching and Neuromorphic Behaviors

by Yuhang Yang, Yuan Yu, Cancan Cui, Xin Liu, Yanyong Li, Peisong Liu and Fei Hui

Nanomaterials 2026, 16(15), 959; https://doi.org/10.3390/nano16150959 - 4 Aug 2026

Viewed by 427

Abstract

Recent years have witnessed a surge in the research of memristors as fundamental building blocks for neuromorphic computing, owing to their exceptional ability to emulate the plastic behavior of biological synapses in a high-density, low-power hardware format. These devices are increasingly recognized as the key to achieving efficient artificial neural networks. Two-dimensional (2D) molybdenum disulfide (MoS₂) is a premier candidate for artificial synapses due to its atomic scale and tunable electronic properties. However, achieving wafer-scale MoS₂ thin films for integrated memristor systems remains a significant challenge. In this work, a scalable strategy combining cetyltrimethylammonium bromide (CTAB)-assisted electrochemical intercalation and oil–water interface self-assembly was developed to fabricate large-area 2H-phase MoS₂ thin films. Leveraging the amphiphilic nature of CTAB-functionalized MoS₂ nanosheets, continuous Janus-structured MoS₂ films with asymmetric wetting properties (hydrophilic vs. hydrophobic) were successfully prepared. Vertical-structured Ag/Janus-structured MoS₂/ITO memristors demonstrated robust non-volatile switching with high endurance and long-term retention. The devices successfully emulated biological synaptic behaviors, including short-term and long-term plasticity. Furthermore, the memristors exhibited distinct optoelectronic synergistic modulation under 405 nm illumination, enabling light-sensitive synaptic functions. This work offers a versatile interface engineering route for low-power integrated sensing–memory–computing hardware. Full article

(This article belongs to the Special Issue 2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)

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9 pages, 13120 KB

Open AccessArticle

Te/Fe₃GaTe₂ 1D-2D Ferroelectric Heterojunction Transistors Enabling Ultrafast Multi-State Switching for Workpiece Surface Defect Inspection

by Shiqiang Wang, Zewei He, Tianyun Wang, Ziyu Gao, Lin Wang, Jinlei Zhang and Yucheng Jiang

Nanomaterials 2026, 16(15), 935; https://doi.org/10.3390/nano16150935 - 29 Jul 2026

Viewed by 361

Abstract

Ferroelectric field-effect transistors, which rely on ferroelectric polarization reversal to modulate the channel resistance, hold great promise for nonvolatile memory and neuromorphic computing. The polarization switching dynamics are critical for achieving high-speed, high-bit-density neuromorphic hardware. Here, we report a 1D-2D asymmetric heterojunction composed of a single-element tellurium (Te) nanowire and a magnetic metal, Fe₃GaTe₂. Piezoresponse force microscopy reveals reversible polarization switching at room temperature. Utilizing this ferroelectric heterojunction, we construct ferroelectric semiconductor field-effect transistors that exhibit tunable resistance states exceeding 7 bits, featuring an on/off ratio of 10³, a retention time exceeding 10³ s, and ultrafast switching down to 20 ns. Moreover, the transistor enables accurate recognition of six kinds of micro-defects with an accuracy of 97.1% on the workpiece surface by convolutional neural network. This work establishes the intrinsic relationship between ferroelectric polarization and resistance modulation, providing a device platform for next-generation multilevel storage and ultrafast neuromorphic computing networks. Full article

(This article belongs to the Special Issue 2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)

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10 pages, 3009 KB

Open AccessArticle

Near-Infrared Optical Constants and Guided-Mode Benchmarking of High-Index MoSe₂ for Nanophotonics

by Dmitry Yakubovsky, Andrey Vyshnevyy, Dmitriy Grudinin, Bogdan Karpenko, Mikhail Tatmyshevskiy, Timur Kochetkov, Georgy Ermolaev, Aleksey Arsenin and Valentyn Volkov

Nanomaterials 2026, 16(12), 747; https://doi.org/10.3390/nano16120747 - 15 Jun 2026

Viewed by 398

Abstract

The integration density of photonic integrated circuits is fundamentally limited by evanescent field overlap and subsequent inter-channel crosstalk. Layered transition metal dichalcogenides (TMDCs) bypass these confinement constraints through intrinsic optical birefringence and high refractive indices. Here, we report the near-infrared optical constants and waveguide dispersion of molybdenum diselenide (MoSe₂). Ellipsometry performed on centimeter-scale crystals yields an in-plane refractive index of 4.1–4.7 over 1000–2000 nm, with an extinction coefficient close to the sensitivity limit of the fit away from strong excitonic resonances. To validate the anisotropic dielectric tensor at the device scale, scattering-type scanning near-field optical microscopy (s-SNOM) was utilized to map the propagation of transverse-magnetic modes in 235 nm thick exfoliated flakes. Spatial Fourier analysis of the edge-scattered near-field interference yields effective mode indices that precisely match the modeled dispersion. Using the verified dielectric tensor, finite-element simulations demonstrate that single-mode MoSe₂ waveguides optically outperform equivalent tungsten disulfide (WS₂) benchmarks. The enhanced evanescent field suppression in the claddings of MoSe₂ waveguide increases the coupling length by a factor of 3.5, reducing the required routing pitch and enabling a 12.5% direct increase in on-chip integration density. The results identify MoSe₂ as a high-index anisotropic platform for compact waveguiding in the near-infrared. Full article

(This article belongs to the Special Issue 2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)

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12 pages, 7819 KB

Open AccessEditor’s ChoiceArticle

Thermally Engineered CVD for Controlling Crystal Orientation and Strain in Large-Area PtTe₂ Layers

by Matteo Gardella, Alessandro Cataldo, Alessandro Forzinetti, Koushik Pasagadugula, Carlo S. Casari, Chiara Massetti, Christian Martella, Alessandro Molle and Alessio Lamperti

Nanomaterials 2026, 16(12), 734; https://doi.org/10.3390/nano16120734 - 13 Jun 2026

Viewed by 605

Abstract

Platinum ditelluride (PtTe₂) is an emerging topological semimetal with intriguing optoelectronic properties. Scalable and controllable growth techniques are fundamental for its technological exploitation. Here, we synthesize large-area PtTe₂ films by tellurization of pre-deposited platinum layers. By selectively modifying the tellurization parameters, we demonstrate the possibility of controlling the layer orientation of tellurized films and of introducing microscopic corrugation in the PtTe₂ film. The first result is obtained by increasing the thermal budget of the process, which changes PtTe₂ preferential crystalline orientation from (001) to (1−13)/(103) growth directions. The latter result is achieved by modifying the heating rate of the process at a fixed growth temperature equal to 550 °C. From the Raman analysis of a wrinkled sample, we find the coexistence of tensile and compressive strains depending on the corrugation site. The demonstrated control over grain orientation and microscopic corrugation provides a powerful strategy to tailor the structural and strain landscape of topological semimetals, providing a robust platform for strain engineering. Full article

(This article belongs to the Special Issue 2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)

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12 pages, 2148 KB

Open AccessEditor’s ChoiceArticle

Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene

by Emanuela Schilirò, Salvatore Ethan Panasci, Raffaella Lo Nigro, Fabrizio Roccaforte, Blagoy Blagoev, Vladimir Mehandzhiev, Borislava Georgieva, Ivalina Avramova, Rositsa Yakimova, Milena Beshkova and Filippo Giannazzo

Nanomaterials 2026, 16(11), 659; https://doi.org/10.3390/nano16110659 - 24 May 2026

Viewed by 914

Abstract

In this work, the atomic layer deposition (ALD) of an ultra-thin AlN film on the surface of monolayer EG grown on-axis 4H-SiC(0001) substrates has been investigated as a function of the number of ALD cycles. The formation of a homogeneous film with a 10 nm thickness and crystalline wurtzite structure was obtained after 320 cycles, as demonstrated by atomic force microscopy (AFM) mapping, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction. Raman mapping revealed a significant reduction in the native compressive strain of as-grown EG (ε ≈ −0.36%) with increasing ALD cycles, down to a value of −0.16% after full coverage. Finally, Kelvin Probe Force Microscopy (KPFM) surface potential mapping allowed the evaluation of energy band alignment of the AlN/EG heterojunction, with a conduction band offset of ~2.6 eV between the crystalline AlN film and the underlying EG. Such a large offset confirms AlN as a promising gate dielectric for EG-based devices. Full article

(This article belongs to the Special Issue 2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)

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16 pages, 2462 KB

Open AccessArticle

Room Temperature Ferromagnetism Engineered in Two-Dimensional Metallic Magnets via Metal–Insulator–Semiconductor Structures

by Yiting Mo, Yijun Huang, Haotian Xu, Shijing Wang, Liang Hu and Lingwei Li

Nanomaterials 2026, 16(10), 596; https://doi.org/10.3390/nano16100596 - 13 May 2026

Viewed by 578

Abstract

The development of novel information-functional devices based on emergent physical phenomena is crucial for integrated circuit technology in the post-Moore era. Two-dimensional magnetic materials present an ideal platform for spintronic devices; however, regulating their room temperature magnetism poses significant challenges. Traditional methods like ionic liquid gating and strain control face issues such as poor stability and complex processes, complicating compatibility with standard silicon technology. Here, we demonstrate a straightforward and robust approach for dielectric layer-engineered room temperature ferromagnetism in 2D metallic magnets by leveraging metal–insulator–semiconductor (MIS) structures. Using surface-oxidized Fe₃GeTe₂ as a model system, we systematically investigate how SiO_x dielectric layer thickness (50–300 nm) modulates magnetic properties. Thin dielectric layers significantly enhance room temperature ferromagnetism through boosted interfacial charge transfer, whereas thick layers maintain the material near its intrinsic state due to dielectric screening effects. Furthermore, reversible optical modulation of magnetism is achieved under ultraviolet illumination, with photoresponse capability diminishing as dielectric thickness increases. This work establishes a scalable, silicon-compatible strategy for controlling 2D magnetism and provides critical insights for developing optically tunable spintronic devices and non-volatile memory applications. Full article

(This article belongs to the Special Issue 2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)

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11 pages, 1663 KB

Open AccessArticle

Dynamically Reconfigurable XNOR/IMP Logic Based on Dual-Mechanism Operation in an Electrically Tunable Two-Dimensional Heterojunction

by Yuting He, Jinbao Jiang, Feng Xiong and Zhihong Zhu

Nanomaterials 2026, 16(5), 335; https://doi.org/10.3390/nano16050335 - 9 Mar 2026

Viewed by 611

Abstract

Reconfigurable logic is crucial for future adaptive computing, but is challenging to realize with conventional complementary metal-oxide-semiconductor technology due to the limited field-effect characteristics of the fundamental silicon devices. Two-dimensional materials offer a promising platform, yet enhancing their functional versatility requires novel operational mechanisms. Here, we demonstrate a single WSe₂/h-BN/graphene heterojunction capable of dynamically switching between distinct logic functions—XNOR and IMP (implication gate or “IF-THEN” gate)—simply by modulating the drain-source voltage. At a low bias of 0.3 V, the carrier distribution is governed by capacitive coupling, realizing an XNOR gate. Increasing the bias to 3 V activates Fowler–Nordheim tunneling between the graphene floating gate and the drain, enabling IMP logic operation. The interplay and voltage-induced transition between these two physical mechanisms underpin the device’s multifunctional capability. This work introduces a novel operational strategy for two-dimensional material-based reconfigurable logic, providing a pathway toward compact, adaptive hardware for post-CMOS computing. Full article

(This article belongs to the Special Issue 2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)

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16 pages, 2468 KB

Open AccessEditor’s ChoiceArticle

Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO₃ Layers

by Kai Liu, Wengui Jiang, Liang Zhou, Yinkang Zhou, Minghui Hu, Yuchen Geng, Yiyuan Zhang, Yi Qiao, Rongming Wang and Yinghui Sun

Nanomaterials 2025, 15(13), 1033; https://doi.org/10.3390/nano15131033 - 3 Jul 2025

Viewed by 1783

Abstract

Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO₃-Ag RRAM device featuring 2D α-MoO₃ as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>10⁶), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO₃-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>10⁴ s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed. Full article

(This article belongs to the Special Issue 2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)

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Review

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23 pages, 56779 KB

Open AccessReview

Advances in Photoluminescence and Quenching Mechanism of Carbon Dots

by Qingyun Xiong, Hafiz M. Ahsen Ilyas, Weiyu Cao and Jinping Xiong

Nanomaterials 2026, 16(11), 686; https://doi.org/10.3390/nano16110686 - 1 Jun 2026

Cited by 1 | Viewed by 1096

Abstract

Carbon dots (CDs) are zero-dimensional carbon nanomaterials with sizes below 10 nm, with high fluorescence quantum yields, variable emission colours, and excellent photostability. Due to their different structural origins and complex surface chemicals, CDs display complex photoluminescence behaviors (PL) and different fluorescence suppression responses. This review systematically summarizes recent advances in understanding the PL mechanisms of CDs, including carbon-core emission, surface emission, molecular emission and crosslink emission. In addition, fluorescence quenching processes triggered by various analytical techniques are discussed, including dynamic quenching, static quenching, Förster resonance energy transfer (FRET), photoinduced electron transfer (PET), and the inner filter effect (IFE). Emphasis is placed on mechanistic understanding and experimental differentiation strategies. A clear understanding of these fundamental mechanisms is essential for optimizing the fluorescence properties of CDs and the design of highly sensitive and selective fluorescence sensors. Finally, potential research directions and applications of CDs based on these mechanical insights are also highlighted. Full article

(This article belongs to the Special Issue 2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)

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