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Nanomaterials
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The 15th Anniversary of Nanomaterials—2D Materials and Heterostructures: Synthesis,...
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The 15th Anniversary of Nanomaterials—2D Materials and Heterostructures: Synthesis, Processing, and Device Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: 31 December 2025 | Viewed by 499

Special Issue Editors

Dr. Filippo Giannazzo

E-Mail Website
Guest Editor
Consiglio Nazionale Delle Ricerche–Institute for Microelectronics and Microsystems (CNR-IMM), Strada VIII, 5, I-95121 Catania, Italy
Interests: 2D materials (graphene, transition metal dichalcogenides); wide bandgap semiconductors (SiC, GaN); high power and high frequency electronics; electrical atomic force microscopy (C-AFM, SCM, SSRM)
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Bela Pecz

E-Mail Website
Guest Editor
HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary
Interests: electron microscopy; 2D materials; compound semiconductors
Special Issues, Collections and Topics in MDPI journals
Dr. Salvatore Ethan Panasci

E-Mail Website
Guest Editor
Consiglio Nazionale Delle Ricerche–Istituto per La Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy
Interests: 2D materials (graphene, transition metal dichalcogenides TMDs); atomic force microscopy; Raman/PL spectroscopy
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Two-dimensional layered materials (including graphene, transition metal dichalcogenides (TMDs), boron nitride (h-BN) and more) and their heterostructures are currently the object of extensive scientific research regarding their application in fields such as electronics/optoelectronics, spintronics, quantum technologies, sensing and energy storage/harvesting. In particular, researchers are currently aiming to integrate graphene and TMDs into a Si CMOS platform, using wide-bandgap and ultra-wide bandgap semiconductors technology. However, several challenges, including the use of scalable deposition methods, processing technology (e.g., Ohmic contacts, thin dielectric deposition) and device integration, need to be addressed before 2D materials can be employed in industry. Furthermore, advanced characterization techniques that specifically assess the quality of 2D materials and related devices are urgently needed.

This Special Issue aims to compile review and original research papers that address recent developments in the growth, integration, device processing and advanced characterization of 2D materials.

It is our pleasure to invite you to submit a manuscript to this Special Issue. Full papers, short communications, and reviews are welcome.

Dr. Filippo Giannazzo
Prof. Dr. Bela Pecz
Dr. Salvatore Ethan Panasci
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D materials: graphene, transition metal dichalcogenides, h-BN, Xenes (silicene, stanene, phosphorene, etc.), MXenes, magnetic layered materials
  • van der Waals heterostructures and 2D alloys
  • large-area growth methods for 2D materials (CVD, MOCVD, MBE, PLD, ALD)
  • the advanced characterization of 2D materials and heterostructures (Atomic resolution TEM, Scanning probe Microscopies, Raman, optical and photoelectron spectroscopy, ...)
  • theoretical modelling
  • electronic/optoelectronics applications (digital, RF, photodetectors, flexible/wearable electronics)
  • sensors (environmental, chemical, biomedical applications)
  • quantum technologies
  • energy technologies (light harvesting, thermoelectrics, batteries/supercapacitors, hydrogen evolution reaction)

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (1 paper)

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Research

16 pages, 2468 KiB  
Article
Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO3 Layers
by Kai Liu, Wengui Jiang, Liang Zhou, Yinkang Zhou, Minghui Hu, Yuchen Geng, Yiyuan Zhang, Yi Qiao, Rongming Wang and Yinghui Sun
Nanomaterials 2025, 15(13), 1033; https://doi.org/10.3390/nano15131033 - 3 Jul 2025
Viewed by 318
Abstract
Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from [...] Read more.
Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO3-Ag RRAM device featuring 2D α-MoO3 as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>106), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO3-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>104 s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed. Full article
(This article belongs to the Special Issue The 15th Anniversary of Nanomaterials—2D Materials and Heterostructures: Synthesis, Processing, and Device Applications)
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