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World Electric Vehicle Journal is published by MDPI from Volume 9 issue 1 (2018). Articles in this Issue were published by The World Electric Vehicle Association (WEVA) and its member the European Association for e-Mobility (AVERE), the Electric Drive Transportation Association (EDTA), and the Electric Vehicle Association of Asia Pacific (EVAAP). They are hosted by MDPI on mdpi.com as a courtesy and upon agreement with AVERE.
Open AccessArticle

Design of a Novel SiC MOSFET Structure for EV Inverter Efficiency Improvement

Research & Development Division Hyundai MotorsSeoul, Korea
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Author to whom correspondence should be addressed.
World Electr. Veh. J. 2015, 7(2), 206-210; https://doi.org/10.3390/wevj7020206
Published: 26 June 2015
PDF [399 KB, uploaded 18 May 2018]

Abstract

Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce,sat and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules, it is possible to achieve high efficiency because of short turn-off time and high operating frequency. Yet also has a problem; Si MOSFETs has large on-resistance compared to Si IGBTs. In this study, SiC(Silicon Carbide) was used to make MOSFETs instead of Si. Futhermore, an accumulation channel concept is adapted to a SiC trench MOSFET, namely Trench ACCUFET. Compared with conventional SiC trench MOSFETs, the novel SiC trench ACCUFET structure has not only lower on-resistance but also high breakdown voltage as shown by the simulation results. We fabricated the Trench ACCUFET for verification, and described improvements that is to be made.
Keywords: SiC; MOSFET; EV; Inverter; Trench SiC; MOSFET; EV; Inverter; Trench
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Jung, Y.-K.; Lee, J.-S.; Lim, T. Design of a Novel SiC MOSFET Structure for EV Inverter Efficiency Improvement. World Electr. Veh. J. 2015, 7, 206-210.

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