Memory Nanomaterials: Growth, Characterization and Device Fabrication
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: closed (30 September 2023) | Viewed by 28649
Special Issue Editors
2. School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Interests: nanomaterials; CMOS and DRAM processing and device physics; memory devices; atomic layer deposition; thin-film deposition; material characterization; microelectronics
2. Guangdong Greater Bay Area Institute of Integrated Circuit and System, R&D Center of Optoelectronic Hybrid IC, Building A, No. 136 Kaiyuan Avenue, Development Zone, Guangzhou, China
Interests: nanomaterials; semiconductor processing and device physics; memory devices; thin-film deposition and epitaxy; material characterization; microelectronics; heterostructures; strain engineering; atomic layer deposition
Special Issues, Collections and Topics in MDPI journals
Interests: nanomaterials; information storage; semiconductor memory; semiconductor process and integration; magnetic recording; magnetic characterization; material characterization; electron imaging; magnetic sensor
Special Issue Information
Dear Colleagues,
The traditional semiconductor technology has gradually approached the physical limit, which makes it difficult to greatly improve the storage efficiency, reservoir performance. In order to make breakthrough progress, we must turn to innovative methods, find new principles, new materials, and new structures. At present, some emerging storage technologies for the 21st century are being studied and developed. The new materials and nanostructures that should be applied have brought hope for future information storage technology. Therefore, this Special Issue focuses on the following scientific fields:
- Si-based heterostructures and nanostructures in DRAM;
- Strained silicon materials in DRAM peripheral circuits;
- The process and integration of nanostructures in DRAM;
- Supercapacitor high-k materials for DRAM;
- Growth and Characterization of IGZO material;
- New materials in emerging DRAM architecture (2T0C, 2T1C…);
- RRAM materials and devices;
- MRAM materials and devices (STT-MRAM, SOT-MRAM, VCMA-MRAM, etc.);
- FRAM materials and devices;
- PCM materials and devices;
- Reliability analysis and characterization of Memory;
- Characterization of memory nanostructures;
- Materials calculation and device simulation;
- Logic-Memory 3D integration;
- Emerging memory applications;
This Special Issue will provide unique knowledge on advanced memory in the materials growth, fabrication, and characterization of nanostructures applied in many fields.
Prof. Dr. Chao Zhao
Prof. Dr. Guilei Wang
Guest Editors
Dr. Huihui Li
Guest Editor Assistant
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Keywords
- memory nanomaterials
- memory devices
- DRAM processing
- characterization
- reliability
- emerging memory
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