Memory Nanomaterials: Growth, Characterization and Device Fabrication

Dear Colleagues,

The traditional semiconductor technology has gradually approached the physical limit, which makes it difficult to greatly improve the storage efficiency, reservoir performance. In order to make breakthrough progress, we must turn to innovative methods, find new principles, new materials, and new structures. At present, some emerging storage technologies for the 21^st century are being studied and developed. The new materials and nanostructures that should be applied have brought hope for future information storage technology. Therefore, this Special Issue focuses on the following scientific fields:

• Si-based heterostructures and nanostructures in DRAM;
• Strained silicon materials in DRAM peripheral circuits;
• The process and integration of nanostructures in DRAM;
• Supercapacitor high-k materials for DRAM;
• Growth and Characterization of IGZO material;
• New materials in emerging DRAM architecture (2T0C, 2T1C…);
• RRAM materials and devices;
• MRAM materials and devices (STT-MRAM, SOT-MRAM, VCMA-MRAM, etc.);
• FRAM materials and devices;
• PCM materials and devices;
• Reliability analysis and characterization of Memory;
• Characterization of memory nanostructures;
• Materials calculation and device simulation;
• Logic-Memory 3D integration;
• Emerging memory applications;

This Special Issue will provide unique knowledge on advanced memory in the materials growth, fabrication, and characterization of nanostructures applied in many fields.

Prof. Dr. Chao Zhao
Prof. Dr. Guilei Wang
Guest Editors

Dr. Huihui Li
Guest Editor Assistant

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