Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal–insulator–semiconductor and metal–insulator–metal structures based on hafnium oxide layers. The fabricated structures were characterized throu...
Silicon carbide (SiC) has significant potential as a third-generation semiconductor material due to its exceptional thermal and electronic properties, yet its high hardness and brittleness make processing costly and complex. This study introduces ult...
Metal–organic frameworks (MOFs) typically exist in the form of powders or dispersed crystals, which limits their direct application in practical engineering scenarios that require monolithic structures and processability. To address this issue,...
Silicon carbide (SiC) and silicon nanoparticle-decorated carbon (Si/C) materials are electrodes that can potentially be used in various rechargeable batteries, owing to their inimitable merits, including non-flammability, stability, eco-friendly natu...
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention...
Busbars are critical components that connect high-current and high-voltage subcomponents in high-power converters. This paper reviews the latest busbar design methodologies and offers design recommendations for both laminated and PCB-based busbars. S...
To achieve lower switching losses and higher frequency capabilities in converter design, researchers worldwide have been investigating Silicon carbide (SiC) modules and MOSFETs. In power electronics, wide bandgap devices such as Silicon carbide are e...
Nanofluids are suspensions of nanoparticles in a base fluid. Water, ethylene glycol, engine oil, and others are often used as base fluids, whereas inorganic additives include metals, metal oxides, carbon-based materials, and non-oxide inorganic mater...
This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems. The characteristics of SiC MOSFETs are eva...
The proper usage of a bandwidth-limited imaging bolometer for the measurement of the lateral temperature profile of microstructures in Silicon-Carbide (SiC) is analyzed. The SiC spectral emissivity,
β-silicon carbide (SiC) powders were synthesized by the carbothermal reduction of methyl-modified silica aerogel/carbon mixtures. The correlations between the phase evolution and morphologies of the SiC powders and the C/SiO2 ratio were investig...
Power quality conditioner systems, such as shunt active power filters (SAPFs), are typically required to have low power losses, high-power density, and to produce no electromagnetic interference to other devices connected to the grid. At the present,...
Power semiconductor devices are fundamental components in modern electronic power conversion. In applications demanding high power density and efficiency, the choice between silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETs is critical. SiC MOSFET...
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct curr...
Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsed power device with wide bandgap material. The super junction (SJ) structure is introduced in the SiC DSRD for the first time in this paper, in order to increase th...
Photodetectors (PDs) based on 4H silicon carbide (SiC) have garnered significant interest due to their exceptional optoelectronic properties. However, their photoresponse is typically restricted to the ultraviolet (UV) region, with limited light abso...
The thermomechanical properties of carbon fiber reinforced silicon carbide ceramic matrix composites (Cf/SiC CMCs) were studied up to 2000 °C using high-temperature in situ flexural testing in argon. The CMC specimens were fabricated using an ult...
For the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to r...
The DC/DC converters and DC/AC inverters based on silicon carbide (SiC) devices as battery interfaces, motor drives, etc., in electric vehicles (EVs) benefit from their low resistances, fast switching speed, high temperature tolerance, etc. Such adva...
Friction stir additive manufacturing (FSAM) is a promising solid-state technique for fabricating high-strength aluminum alloys, such as Al-7075, which are difficult to process using conventional melting-based additive manufacturing (AM) methods. This...
This study investigated the fabrication and characterization of polylactic acid (PLA)-based ceramic composite filaments for fused deposition modeling (FDM) 3D printing. Boron carbide (B4C) and silicon carbide (SiC) were incorporated into PLA at vario...
This study investigates the effects of magnesium (Mg) content, silicon carbide (SiC) reinforcement, and aging temperature (AT) on the ultimate tensile strength (UTS) and Brinell hardness number (BHN) of eutectic Al-Si composites using a full factoria...
This article describes spark plasma sintering of ceramics based on silicon carbide with nanoadditives, as follows: MnOnano 5.5 wt. % + Al2O3nano 2.0 wt. % + SiCnm (37–57 wt. %) + SiCµm (31–51 wt. %) + SiO2µm 4.5 wt. %. Sinteri...
Silicon carbide (SiC) is a highly valued material in structural ceramics due to its exceptional properties, including low thermal expansion, high mechanical strength, thermal conductivity, hardness, and corrosion resistance. These attributes make SiC...
Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) have revolutionized modern power electronics by enabling devices that operate at higher voltages, temperatures, and switching frequencies than their silicon cou...
Silicon carbide (SiC) ceramic material has become the most promising third-generation semiconductor material for its excellent mechanical properties at room temperature and high temperature. However, SiC ceramic machining has serious tool wear, low m...
The promise of intracortical neural interfaces—to restore lost sensory and motor function and probe the brain’s activity—has long been constrained by device instability over chronic implantation. Conventional silicon-based probes, c...
With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffe...
Silicon carbide (SiC) is widely used as a power semiconductor substrate material, even if it takes a large amount of processing time to secure an appropriate surface as a wafer for devices after chemical mechanical polishing (CMP). Therefore, studies...
Hexagonal boron nitride/silicon carbide (h-BN/SiC) ceramics were fabricated by a spark plasma sintering (SPS) method. Phase and microstructure of ceramics were characterized and observed, respectively, using the X-ray diffraction, scanning electron m...
The subject of this study was Si-C composites for lithium-ion battery (LIB) anodes obtained by carbonization of nanodispersed silicon with carbon monofluoride. To determine the possibility of increasing the degree of graphitization of nanodispersed c...
Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad applicat...
The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate wit...
Sensors operating in extreme environments are currently a focal point of global research. Extreme environmental conditions, such as overload, vibration, corrosion, high pressure, high temperature, and radiation, can affect the performance of sensors...
Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window rangi...
An integrated calculation combining X-ray fluorescence (XRF), thermogravimetric analysis (TGA), and elemental analysis (EA) was applied to the compositional assessment of commercial green silicon carbide (SiC) and biomass-derived synthesized SiC. Tot...
Wafer bonding of a silicon carbide (SiC) diaphragm to a patterned SiC substrate coated with aluminum nitride (AlN) film as an insulating layer is a promising choice to fabricate an all-SiC capacitive pressure sensor. To demonstrate the bonding feasib...
This study evaluates the annual global energy-savings potential of various power electronics applications utilizing commercial silicon carbide (SiC) wide bandgap (WBG)-based power converters. As the first analysis to focus on real market products, ou...
This study targets insulation challenges in high-frequency power transformers (HFPTs), which are an integral part of the high-voltage, high-capacity isolated DC/DC converter under development for offshore renewable energy systems. We propose a nano-s...
This study presents a comparative analysis of the corrosion and mechanical properties of an Al-SiC composite and an AA 2024 aluminum alloy, focusing on their suitability for aeronautical applications. The Al-SiC composite was fabricated using advance...
This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying...
The use of Silicon Carbide (SiC) MOSFETs significantly improves converter performance by increasing efficiency and reducing costs, to the detriment of electro-magnetic emission and reliability. Implementing a predictive maintenance strategy based on...
Silicon carbide (SiC) is an ideal material for high-power and high-performance electronic applications. Top-seeded solution growth (TSSG) is considered as a potential method for bulk growth of high-quality SiC single crystals from the liquid phase so...
We propose a novel silicon carbide (SiC) self-aligned N-type ion implanted trench MOSFET (NITMOS) device. The maximum electric field in the gate oxide could be effectively reduced to below 3 MV/cm with the introduction of the P-epi layer below the tr...
Nowadays, medium- and high-power applications make use of silicon carbide (SiC) MOSFETs, and many times their parallelization is necessary. Unfortunately, this requirement causes an inevitable current unbalance between power devices, affecting the pe...
Accurate fault simulation and failure prediction have long been challenges for SiC MOSFETs users. This paper presents a behavior model of Silicon Carbide (SiC) double-implanted MOSFET (DMOSFET), considering thermal-runaway failures in short-circuit a...
Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface...
Silicon carbide (SiC) MOSFETs tend to become one of the main switching elements in power electronics applications of medium- and high-power density. Usually, SiC MOSFETs are connected in parallel to increase power rating. Unfortunately, unequal curre...
The complex multiscale and anisotropic nature of silicon carbide (SiC) ceramic matrix composite (CMC) makes it difficult to accurately model its performance in nuclear applications. The existing models for nuclear grade composite SiC do not account f...
In medium- and high-power-density applications, silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs) are often connected in parallel increasing the current capability. However, the current sharing of paralleled SiC MOSFE...
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