Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects

Dear Colleagues,

As a promising wide bandgap semiconductor, Silicon Carbide (SiC) has attracted increasing attention due to the recent achievements in wafer growth technology and its outstanding materials properties such as higher values for breakdown electric field, saturation velocity and superior thermal conductivity.

SiC, being one of the most widely used wide bandgap materials, plays a critical role in power industries by setting new standards in power savings as switches or rectifiers in the system for electric vehicles, wind turbines, solar cells, data centers, as well as high temperature and radiation tolerant electronic applications.

This Special Issue of Materials, entitled “Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects” is focused on recent progress in all topics related to SiC materials and devices. We invite submission of research articles (full papers, communications and reviews) focusing on recent developments in the synthesis, processing, design and characterization of SiC materials and devices, as well as its applications to systems.

We will accept articles in distinct areas of applications and a wide range of topics on both experimental and theoretical works and the topics to be covered in this special issue covers will cover include, but are not limited to:

• Bulk and Epitaxial Growth of SiC
• Heterostructures or related materials (graphene, GaN, Ga2O3, ZnO, etc.) grown on SiC
• Defect Analysis and Engineering
• Device Design and Fabrication Processes in SiC
• Packaging, Applications and Reliability for Power Electronics
• Novel devices

Prof. Dr. Sang-Mo Koo
Guest Editor

Manuscript Submission Information

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