Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane
Abstract
:1. Introduction
2. Materials and Methods
2.1. Precursor Synthesis
2.2. Thermal CVD Processing Conditions
3. Analytical Techniques
4. Results and Discussion
4.1. Precursor Selection
4.2. XPS Analysis
4.3. FTIR Analysis
4.4. Ellipsometry Analysis
4.5. Photoluminescence Analysis
4.6. Atomic Force Microscopy
4.7. Scanning Electron Microscopy
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
- Kaloyeros, A.E.; Jové, F.A.; Goff, J.; Arkles, B. Review—Silicon nitride and silicon nitride-rich thin film technologies: Trends in deposition techniques and related applications. ECS J. Solid State Sci. Technol. 2017, 6, P691. [Google Scholar] [CrossRef]
- Ivashchenko, V.I.; Kozak, A.O.; Porada, O.K.; Ivashchenko, L.A.; Sinelnichenko, O.K.; Lytvyn, O.S.; Tomila, T.V.; Malakhov, V.J. Characterization of SiCN thin films: Experimental and theoretical investigations. Thin Solid Films 2014, 569, 57–63. [Google Scholar] [CrossRef]
- Marsi, N.; Majlis, B.Y.; Mohd-Yasin, F.; Abidin, H.E.Z.; Hamzah, A.A. A review: Properties of silicon carbide materials in mems application. Int. J. Nanoelectron. Mater. 2020, 13, 113–128. [Google Scholar]
- Daviau, K.; Lee, K.K.M. High-pressure, high-temperature behavior of silicon carbide: A review. Crystals 2018, 8, 217. [Google Scholar] [CrossRef] [Green Version]
- Lukin, D.M.; Guidry, M.A.; Vučković, J. Silicon Carbide: From Abrasives to Quantum Photonics. Opt. Photonics News 2021, 32, 34. [Google Scholar] [CrossRef]
- Eddy, C.R.; Gaskill, D.K. Silicon carbide as a platform for power electronics. Science 2009, 324, 1398–1400. [Google Scholar] [CrossRef]
- Roccaforte, F.; Fiorenza, P.; Vivona, M.; Greco, G.; Giannazzo, F. Selective doping in silicon carbide power devices. Materials 2021, 14, 3923. [Google Scholar] [CrossRef]
- Gammon, P.M.; Chan, C.W.; Li, F.; Gity, F.; Trajkovic, T.; Pathirana, V.; Flandre, D.; Kilchytska, V. Development, characterisation and simulation of wafer bonded Si-on-SiC substrates. Mater. Sci. Semicond. Process 2018, 78, 69–74. [Google Scholar] [CrossRef]
- Guidry, M.A.; Yang, K.Y.; Lukin, D.M.; Markosyan, A.; Yang, J.; Fejer, M.M.; Vučković, J. Optical parametric oscillation in silicon carbide nanophotonics. Optica 2020, 7, 1139. [Google Scholar] [CrossRef]
- Son, N.T.; Anderson, C.P.; Bourassa, A.; Miao, K.C.; Babin, C.; Widmann, M.; Niethammer, M.; Ul Hassan, J.; Morioka, N.; Ivanov, I.G.; et al. Developing silicon carbide for quantum spintronics. Appl. Phys. Lett. 2020, 116, 190501. [Google Scholar] [CrossRef]
- Tabassum, N.; Kotha, M.; Kaushik, V.; Ford, B.; Dey, S.; Crawford, E.; Nikas, V.; Gallis, S. On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays. Nanomaterials 2018, 8, 906. [Google Scholar] [CrossRef] [Green Version]
- Tabassum, N.; Nikas, V.; Kaloyeros, A.E.; Kaushik, V.; Crawford, E.; Huang, M.; Gallis, S. Engineered telecom emission and controlled positioning of Er3+ enabled by SiC nanophotonic structures. Nanophotonics 2020, 9, 1425–1437. [Google Scholar] [CrossRef]
- Rufangura, P.; Folland, T.G.; Agrawal, A.; Caldwell, J.D.; Iacopi, F. Towards low- loss on-chip nanophotonics with coupled graphene and silicon carbide: A review. J. Phys. Mater. 2020, 3, 32005. [Google Scholar] [CrossRef]
- Chabi, S.; Kadel, K. Two-dimensional silicon carbide: Emerging direct band gap semiconductor. Nanomaterials 2020, 10, 2226. [Google Scholar] [CrossRef]
- Gallis, S.; Efstathiadis, H.; Huang, M.; Nyein, E.E.; Hommerich, U.; Kaloyeros, A.E. Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films. J. Mater. Res. 2004, 19, 2389–2393. [Google Scholar] [CrossRef]
- Boccard, M.; Holman, Z.C. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells. J. Appl. Phys. 2015, 118, 65704. [Google Scholar] [CrossRef] [Green Version]
- Kleinová, A.; Huran, J.; Sasinková, V.; Perný, M.; Šály, V.; Packa, J. FTIR Spectroscopy of Silicon Carbide Thin Films Prepared by PECVD Technology for Solar Cell Application. In Proceedings of the Reliability of Photovoltaic Cells, Modules, Components, and Systems VIII, San Diego, CA, USA, 9–13 August 2015; Dhere, N.G., Wohlgemuth, J.H., Jones-Albertus, R., Eds.; SPIE: Bellingham, WA, USA, 2015; Volume 9563, pp. 166–173. [Google Scholar]
- Graef, E.; Huizing, B.; Mahnkopf, R.; Hidemi Ishiuchi, J.; Hayashi, Y.; Ikumi, N.; Miyakawa, H.; Choi, K.; Hoon Choi, J.; Pam, T.; et al. International Technology Roadmap for Semiconductors 2.0; IEEE: San Jose, CA, USA, 2015. [Google Scholar]
- King, S.W. Dielectric barrier, etch stop, and metal capping materials for state of the art and beyond metal interconnects. ECS J. Solid State Sci. Technol. 2015, 4, N3029–N3047. [Google Scholar] [CrossRef]
- Wrobel, A.M.; Walkiewicz-Pietrzykowska, A.; Uznanski, P. Thin a-SiC: H Films Formed by Remote Hydrogen Microwave Plasma CVD using Dimethylsilane and Trimethylsilane Precursors. Chem. Vap. Depos. 2014, 20, 112–117. [Google Scholar] [CrossRef]
- Yu, E.; Cho, S.; Park, B.G. A silicon-compatible synaptic transistor capable of multiple synaptic weights toward energy-efficient neuromorphic systems. Electronics 2019, 8, 1102. [Google Scholar] [CrossRef] [Green Version]
- Liu, L.; Zhao, J.; Cao, G.; Zheng, S.; Yan, X. A Memristor-Based Silicon Carbide for Artificial Nociceptor and Neuromorphic Computing. Adv. Mater. Technol. 2021, 6, 1–9. [Google Scholar] [CrossRef]
- Pessoa, R.S.; Medeiros, H.S.; Fraga, M.A.; Galvao, N.K.M.; Sagas, J.C.; Maciel, H.S.; Massi, M.; da Silva Sobrinho, A.S. Low-pressure deposition techniques of silicon carbide thin films: An overview. Mater. Sci. Res. J. 2013, 7, 329–345. [Google Scholar]
- Weidman, T.; Schroeder, T. Method for the Deposition of Silicon Carbide ans Silicon Carbonitride Films. U.S. Patent 8.440,571 B2, 14 May 2013. [Google Scholar]
- Underwood, B.; Mallick, A.; Ingle, N.K. Molecular Layer Deposition of Silicon Carbide. U.S. Patent 8,753,985 B1, 17 June 2014. [Google Scholar]
- Mallick, A.; Ingle, N.K. Flowable Silicon-and-Carbon Layers. U.S. Patent 2013/0217239 A1, 22 August 2013. [Google Scholar]
- Nardin, T.; Gouze, B.; Cambedouzou, J.; Meyer, D.; Diat, O. Processing and Properties of Advanced Ceramics and Composites VII: Ceramic Transactions; Mahmoud, M.M., Bhalla, A., Bansal, N.P., Singh, J.P., Castro, R.H.R., Manjooran, N.J., Pickrell, G., Johnson, S., Brennecka, G., Singh, G., et al., Eds.; The American Ceramic Society: Columbus, OH, USA, 2015; Volume 252, pp. 221–227. [Google Scholar]
- Gallis, S.; Nikas, V.; Eisenbraun, E.; Huang, M.; Kaloyeros, A. On the Effects of Thermal Treatment on the Composition, Structure, Morphology, and Optical Properties of Hydrogenated Amorphous Silicon-Oxycarbide. J. Mater. Res. 2009, 24, 2561–2573. [Google Scholar] [CrossRef]
- Gallis, S.; Nikas, V.; Huang, M.; Eisenbraun, E.; Kaloyeros, A.E. Comparative study of the effects of thermal treatment on the optical properties of hydrogenated amorphous silicon-oxycarbide. J. Appl. Phys. 2007, 102, 024302. [Google Scholar] [CrossRef]
- Nevin, W.A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y. Emission of blue light from hydrogenated amorphous silicon carbide. Nature 1994, 368, 529–531. [Google Scholar] [CrossRef]
Property | Value |
---|---|
Chemical Structure | |
Molecular Formula | C3H12Si3 |
Molecular Weight (g) | 132.38 |
Melting Point (°C) | −10 |
Boiling Point (°C) | 136@760 torr |
Density (g/cm3), 20 °C | 0.9001 |
Vapor Pressure (torr), 35 °C | ~10 torr |
Heat of Vaporization (kJ/mole) | 43.2 |
Refractive Index, nD, 20 °C | 1.5059 |
FTIR | 2130 cm−1, Si-H, very strong |
1HNMR (CDCl3) | 1HNMR(CDCl3): 0.01(m, 6H), 4.09(m, 6H) |
Flash Point, (°C) | 11 |
Run | Precursor Source Temperature (°C) | Precursor | Precursor Flow Rate (sccm) | Substrate Temperature (°C) | Pressure (torr) | Ar Dilution Gas Flow Rate (sccm) |
---|---|---|---|---|---|---|
1 | 50 °C | TMDSB (for comparison) | 10 | 800 | 1 | 400 |
2 | 50 °C | TSCH | 1 | 400 | 1 | 200 |
3 | 50 °C | TSCH | 1 | 450 | 1 | 200 |
4 | 50 °C | TSCH | 1 | 500 | 1 | 200 |
5 | 50 °C | TSCH | 1 | 550 | 1 | 200 |
6 | 50 °C | TSCH | 1 | 600 | 0.2 | 200 |
7 | 50 °C | TSCH | 1 | 650 | 0.2 | 200 |
8 | 50 °C | TMDSB (for comparison) | 10 | 800 | 1.5 | 400 |
9 | 50 °C | TSCH | 1 | 700 | 0.2 | 200 |
10 | 50 °C | TSCH | 1 | 750 | 0.2 | 200 |
11 | 50 °C | TSCH | 1 | 800 | 0.2 | 200 |
12 | 50 °C | TSCH | 1 | 850 | 0.2 | 200 |
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Kaloyeros, A.E.; Goff, J.; Arkles, B. Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane. Electron. Mater. 2022, 3, 27-40. https://doi.org/10.3390/electronicmat3010003
Kaloyeros AE, Goff J, Arkles B. Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane. Electronic Materials. 2022; 3(1):27-40. https://doi.org/10.3390/electronicmat3010003
Chicago/Turabian StyleKaloyeros, Alain E., Jonathan Goff, and Barry Arkles. 2022. "Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane" Electronic Materials 3, no. 1: 27-40. https://doi.org/10.3390/electronicmat3010003