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Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET

1
State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing 400044, China
2
Energy Internet Engineering Technology Center of Chongqing City, Chongqing University of Technology, Chongqing 400054, China
3
Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, and College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
*
Authors to whom correspondence should be addressed.
Micromachines 2019, 10(5), 314; https://doi.org/10.3390/mi10050314
Received: 11 April 2019 / Revised: 1 May 2019 / Accepted: 8 May 2019 / Published: 10 May 2019
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
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Abstract

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To guarantee fast and reliable action of a 400 V DC SSCB with SiC MOSFET, circuit design and prototype development were carried out. Taking 400V DC microgrid as research background, firstly, the topology of DC SSCB with SiC MOSFET was introduced. Then, the drive circuit of SiC MOSFET, fault detection circuit, energy absorption circuit, and snubber circuit of the SSCB were designed and analyzed. Lastly, a prototype of the DC SSCB with SiC MOSFET was developed, tested, and compared with the SSCB with Silicon (Si) insulated gate bipolar transistor (IGBT). Experimental results show that the designed circuits of SSCB with SiC MOSFET are valid. Also, the developed miniature DC SSCB with the SiC MOSFET exhibits faster reaction to the fault and can reduce short circuit time and fault current in contrast with the SSCB with Si IGBT. Hence, the proposed SSCB can better meet the requirements of DC microgrid protection. View Full-Text
Keywords: silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs); solid state circuit breaker (SSCB); prototype; circuit design silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs); solid state circuit breaker (SSCB); prototype; circuit design
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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MDPI and ACS Style

Li, H.; Yu, R.; Zhong, Y.; Yao, R.; Liao, X.; Chen, X. Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET. Micromachines 2019, 10, 314.

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