Next-Generation Wide Band Gap Device Architectures for Power Electronics and Renewable Energy Applications
A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "F3: Power Electronics".
Deadline for manuscript submissions: 25 August 2026 | Viewed by 4912
Special Issue Editors
Interests: gallium nitride; transistors; diodes; new device architectures; power electronics; renewable energies
Special Issues, Collections and Topics in MDPI journals
Interests: epitaxy; gallium nitride; new device architectures; vertical devices; power electronics; renewable energies
Special Issues, Collections and Topics in MDPI journals
Interests: gallium nitride; transistors; diodes; new device architectures; power electronics; spice model; GaN circuits and driver
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Wide band gap materials such as gallium nitride (GaN) and silicon carbide (SiC) are increasingly used to fabricate power electronics devices. They are well-suited for applications such as electric vehicles (EVs) and renewable energy systems like solar inverters.
For example, GaN devices with a lateral architecture (High Electron Mobility Transistors - HEMTs) are currently the most commercially widespread. However, vertical architecture has also been studied for many years, and this can give gains in performance in terms of Ron for a given device size and voltage, but also in terms of trap suppression and failure modes (Avalanche failure is not possible in HEMT devices). The piezoelectric properties of GaN can also be exploited to improve device performance in innovative ways.
In addition to GaN and SiC, Ga2O3, AlN, AlGaN, and Diamond have even larger band gaps. These materials still have significant challenges, but they could make the fabrication of “ultimate power convertors” possible.
The scope of this Special Issue is to cover research that explores novel power electronics device architectures composed of wide-bandgap semiconductors. In particular, this issue focuses on the use of these devices in renewable energy applications and electric vehicles, where highly efficient as well as compact electrical energy conversion is desired.
Dr. Julien Buckley
Dr. Matthew Charles
Dr. René Escoffier
Guest Editors
Manuscript Submission Information
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Keywords
- gallium nitride
- silicon carbide
- transistors
- diodes
- power electronics
- spice model
- circuits and drivers
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