Journal Description
Electronic Materials
Electronic Materials
is an international, peer-reviewed, open access journal on fundamental science, engineering, and practical applications of electronic materials published quarterly online by MDPI.
- Open Access— free for readers, with article processing charges (APC) paid by authors or their institutions.
- High Visibility: indexed within Scopus and other databases.
- Rapid Publication: manuscripts are peer-reviewed and a first decision is provided to authors approximately 22.4 days after submission; acceptance to publication is undertaken in 2.9 days (median values for papers published in this journal in the first half of 2024).
- Journal Rank: CiteScore - Q2 (Materials Science (miscellaneous))
- Recognition of Reviewers: APC discount vouchers, optional signed peer review, and reviewer names published annually in the journal.
- Electronic Materials is a companion journal of Materials.
Latest Articles
Raman Spectroscopy and Electrical Transport in 30Li2O• (67−x) B2O3•(x) SiO2•3Al2O3 Glasses
Electron. Mater. 2024, 5(3), 166-188; https://doi.org/10.3390/electronicmat5030012 - 12 Sep 2024
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We have investigated the influence of the relative proportions of glass formers in a series of lithium alumino-borosilicate glasses with respect to electrical conductivity (σ) and glass transition temperature (Tg) as functions of glass structure, as determined using Raman spectroscopy.
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We have investigated the influence of the relative proportions of glass formers in a series of lithium alumino-borosilicate glasses with respect to electrical conductivity (σ) and glass transition temperature (Tg) as functions of glass structure, as determined using Raman spectroscopy. The ternary lithium alumino-borate glass exhibits the highest σ and lowest Tg among all the compositions of the glass series, 30Li2O•3Al2O3• (67−x) B2O3•xSiO2. However, as B2O3 is replaced by SiO2, a shallow minimum in σ, as well as a shallow maximum in Tg, are observed near x = 27, where the Raman spectra indicate that isolated diborate/tetraborate/orthoborate groups are being progressively replaced by danburite/reedmergnerite-like borosilicate network units. Overall, as the glasses become silica-rich, σ is minimized, while Tg is maximized. In general, these findings show correlations among Tg (sensitive to network polymerization), σ (proportional to ionic mobility), and the different borate and silicate glass structural units as determined using Raman spectroscopy.
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Open AccessArticle
Inkjet Printing of a Gate Insulator: Towards Fully Printable Organic Field Effect Transistor
by
Huiwen Bai, Richard M. Voyles and Robert A. Nawrocki
Electron. Mater. 2024, 5(3), 160-165; https://doi.org/10.3390/electronicmat5030011 - 23 Aug 2024
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In this work, a gate insulator poly (4-vinylphenol) (PVP) of an organic field effect transistor (OFET) was deposited using an inkjet printing technique, realized via a high printing resolution. Various parameters, including the molecular weight of PVP, printing direction, printing voltage, and drop
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In this work, a gate insulator poly (4-vinylphenol) (PVP) of an organic field effect transistor (OFET) was deposited using an inkjet printing technique, realized via a high printing resolution. Various parameters, including the molecular weight of PVP, printing direction, printing voltage, and drop frequency, were investigated to optimize OFET performance. Consequently, PVP with a smaller molecular weight of 11 k and a printing direction parallel to the channel, a printing voltage of 18 V, and a drop frequency of 10 kHz showed the best OFET performance. With a direct ink writing-printed organic semiconductor, this work paves the way for fully inkjet-printed OFETs.
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Open AccessArticle
C60/CZTS Junction Combination to Improve the Efficiency of CZTS-Based Heterostructure Solar Cells: A Numerical Approach
by
Jobair Al Rafi, Md. Ariful Islam, Sayed Mahmud, Mitsuhiro Honda, Yo Ichikawa and Muhammad Athar Uddin
Electron. Mater. 2024, 5(3), 145-159; https://doi.org/10.3390/electronicmat5030010 - 15 Aug 2024
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This work presents a copper zinc tin sulfide (CZTS)-based solar cell structure (AI/ITO/C60/CZTS/SnS/Pt) with C60 as a buffer layer, developed using the SCAPS-1D simulator by optimizing each parameter to calculate the output. Optimizing the parameters, the acceptor concentration and thickness
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This work presents a copper zinc tin sulfide (CZTS)-based solar cell structure (AI/ITO/C60/CZTS/SnS/Pt) with C60 as a buffer layer, developed using the SCAPS-1D simulator by optimizing each parameter to calculate the output. Optimizing the parameters, the acceptor concentration and thickness were altered from 6.0 × 1015 cm−3 to 6.0 × 1018 cm−3 and 1500 nm to 3000 nm, respectively. Although, in this simulator, we can tune the value for the acceptor concentration to 6.0 × 1022, higher doping might present an issue regarding adjustment in the physical experiment. Thus, tunable parameters need to be chosen according to the reliability of the experimental work. The defect density varied from 1.0 × 1014 cm−3 to 1.0 × 1017 cm−3 and the auger hole/electron capture coefficient was determined to be 1.0 × 10−26 cm6 s−1 for the maintenance of the minorities in theoretical to quasi-proper experimental measurements. Although the temperature was intended to be kept near room temperature, this parameter was varied from 290 K to 475 K to investigate the effects of the temperature on this cell. The optimization of the proposed structure resulted in a final acceptor concentration of 6.0 × 1018 cm−3 and a thickness of 3000 nm at a defect density of 1.0 × 1015 cm−3, which will help to satisfy the desired experimental performance. Satisfactory outcomes (VOC = 1.24 V, JSC = 27.03 mA/cm2, FF = 89.96%, η = 30.18%) were found compared to the previous analysis.
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Open AccessArticle
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs
by
Marcello Cioni, Giovanni Giorgino, Alessandro Chini, Antonino Parisi, Giacomo Cappellini, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali and Ferdinando Iucolano
Electron. Mater. 2024, 5(3), 132-144; https://doi.org/10.3390/electronicmat5030009 - 23 Jul 2024
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In this paper, a new method for evaluating hot-electron degradation in p-GaN gate AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter analyzer to study VTH and RON drifts induced by on-state stress at VDS = 50 V.
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In this paper, a new method for evaluating hot-electron degradation in p-GaN gate AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter analyzer to study VTH and RON drifts induced by on-state stress at VDS = 50 V. The results show that VTH drift and part of the RON degradation induced by the on-state stress are recoverable and likely due to the ionization of C-related acceptors in the buffer. This was confirmed by a preliminary characterization of C-related buffer traps. Conversely, the remaining part of RON degradation (not recovered in 1000 s) was strongly affected by the surface treatment. The current level set during on-state stress affected the amount of non-recoverable degradation, confirming the involvement of hot electrons. Thanks to the monitoring of the parameters’ recovery, the proposed method provides important insights into the physical mechanisms governing the parameters’ degradation. This extends the capabilities of state-of-the art systems, without the need for custom setup development.
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Open AccessReview
Recent Advances of Conductive Hydrogels for Flexible Electronics
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Jingyu Wang, Bao Yang, Zhenyu Jiang, Yiping Liu, Licheng Zhou, Zejia Liu and Liqun Tang
Electron. Mater. 2024, 5(3), 101-131; https://doi.org/10.3390/electronicmat5030008 - 22 Jun 2024
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Conductive hydrogels combine the properties of both hydrogels and conductors, making them soft, flexible, and biocompatible. These properties enable them to conform to irregular surfaces, stretch and bend without losing their electrical conductivity, and interface with biological systems. Conductive hydrogels can be utilized
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Conductive hydrogels combine the properties of both hydrogels and conductors, making them soft, flexible, and biocompatible. These properties enable them to conform to irregular surfaces, stretch and bend without losing their electrical conductivity, and interface with biological systems. Conductive hydrogels can be utilized as conductive traces, electrodes, or as a matrix for flexible electronics. Exciting applications in sensors, tissue engineering, and human-machine interaction have been demonstrated worldwide. This review comprehensively covers the progress in this field, focusing on several main aspects: functional materials, performance improvement strategies, and wearable applications in human-related areas. Furthermore, the major approaches and challenges for improving their mechanical properties, conductivity, and long-term stability are systematically summarized.
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Open AccessReview
Review on Power Cycling Reliability of SiC Power Device
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Xu Gao, Qiang Jia, Yishu Wang, Hongqiang Zhang, Limin Ma, Guisheng Zou and Fu Guo
Electron. Mater. 2024, 5(2), 80-100; https://doi.org/10.3390/electronicmat5020007 - 10 Jun 2024
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The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for assessing the packaging reliability of power
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The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for assessing the packaging reliability of power devices. In this work, low-thermal-resistance packaging design structures of SiC devices are introduced, encompassing planar packaging with dual heat dissipation, press-pack packaging, three-dimensional (3D) packaging, and hybrid packaging. PCT methods and their control strategies are summarized and discussed. Direct-current PCT is the focus of this review. The failure mechanisms of SiC devices under PCT are pointed out. The electrical and temperature-sensitive parameters adopted to monitor the aging of SiC devices are organized. The existing international standards for PCT are evaluated. Due to the lack of authoritative statements for SiC devices, it is difficult to achieve comparison research results without consistent preconditions. Furthermore, the lifetimes of the various packaging designs of the tested SiC devices under PCTs are statistically analyzed. Additionally, problems related to parameter monitoring and test equipment are also summarized. This review explores the broader landscape by delving into the current challenges and main trends in PCTs for SiC devices.
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Open AccessArticle
The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode
by
So-Yeon Kwon, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Hi-Deok Lee and Ga-Won Lee
Electron. Mater. 2024, 5(2), 71-79; https://doi.org/10.3390/electronicmat5020006 - 6 Jun 2024
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In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray
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In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray diffraction (XRD) analysis shows that ZnO has a hexagonal wurtzite structure, and HfO2 exhibits both monoclinic and orthorhombic phases. The average grain sizes are 10.9 nm for ZnO and 1.55 nm for HfO2. In regards to the electrical characteristics, the I–V curve, cycling test, and voltage stress are measured. The measurement results indicate that devices with TiN/Ti TE exhibit lower set and higher reset voltage and stable bipolar switching behavior. However, a device with Pd TE demonstrates higher set and lower reset voltage. This phenomenon can be explained by the Gibbs free energy of formation (∆Gf°). Additionally, the Pd TE device shows unstable bipolar switching characteristics, where unipolar switching occurs simultaneously during the cycling test. This instability in devices with Pd TE could potentially lead to soft errors in operation. For guaranteeing stable bipolar switching, the oxygen affinity of material for TE should be considered in regards to ZnO/HfO2 bilayer RRAM.
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Open AccessArticle
Silver-Doped CsPbI2Br Perovskite Semiconductor Thin Films
by
Tamiru Kebede, Mulualem Abebe, Dhakshnamoorthy Mani, Aparna Thankappan, Sabu Thomas and Jung Yong Kim
Electron. Mater. 2024, 5(2), 56-70; https://doi.org/10.3390/electronicmat5020005 - 13 May 2024
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All-inorganic perovskite semiconductors have received significant interest for their potential stability over heat and humidity. However, the typical CsPbI3 displays phase instability despite its desirable bandgap of ~1.73 eV. Herein, we studied the mixed halide perovskite CsPbI2Br by varying the
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All-inorganic perovskite semiconductors have received significant interest for their potential stability over heat and humidity. However, the typical CsPbI3 displays phase instability despite its desirable bandgap of ~1.73 eV. Herein, we studied the mixed halide perovskite CsPbI2Br by varying the silver doping concentration. For this purpose, we examined its bandgap tunability as a function of the silver doping by using density functional theory. Then, we studied the effect of silver on the structural and optical properties of CsPbI2Br. Resultantly, we found that ‘silver doping’ allowed for partial bandgap tunability from 1.91 eV to 2.05 eV, increasing the photoluminescence (PL) lifetime from 0.990 ns to 1.187 ns, and, finally, contributing to the structural stability when examining the aging effect via X-ray diffraction. Then, through the analysis of the intermolecular interactions based on the solubility parameter, we explain the solvent engineering process in relation to the solvent trapping phenomena in CsPbI2Br thin films. However, silver doping may induce a defect morphology (e.g., a pinhole) during the formation of the thin films.
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Open AccessArticle
Solution-Processable and Eco-Friendly Functionalization of Conductive Silver Nanoparticles Inks for Printable Electronics
by
Sonia Ceron, David Barba and Miguel A. Dominguez
Electron. Mater. 2024, 5(2), 45-55; https://doi.org/10.3390/electronicmat5020004 - 16 Apr 2024
Cited by 2
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The functionalization of conductive inks has been carried out through the decomposition of hydrogen peroxide (H2O2) onto the surface of silver nanoparticles (AgNPs). The ink prepared using this eco-friendly chemical reagent has been characterized structurally, chemically, and morphologically, showing
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The functionalization of conductive inks has been carried out through the decomposition of hydrogen peroxide (H2O2) onto the surface of silver nanoparticles (AgNPs). The ink prepared using this eco-friendly chemical reagent has been characterized structurally, chemically, and morphologically, showing the presence of stable AgNPs with suitable properties as well as the absence of residual contamination. The electrical conductivity of such a solution-processable ink is evidenced for patterns designed on flexible photographic paper substrates, using a refillable fountain pen that is implemented as a printing mechanism for the fabrication of simple printed circuit boards (PCBs). The functionality and durability of the tested systems are demonstrated under various mechanical constraints, aiming to basically reproduce the normal operation conditions of flexible electronic devices. The obtained results indicate that the implementation of these AgNP-based inks is relevant for direct applications in inkjet printing technology, thus paving the way for the use of greener chemicals in ink preparation.
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Open AccessArticle
Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N2 Purging and N2 Annealing
by
Gayan K. L. Sankalpa, Gayan R. K. K. G. R. Kumarasinghe, Buddhika S. Dassanayake and Gayan W. C. Kumarage
Electron. Mater. 2024, 5(1), 30-44; https://doi.org/10.3390/electronicmat5010003 - 13 Mar 2024
Abstract
The impact of N2 purging in the CdS deposition bath and subsequent N2 annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition
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The impact of N2 purging in the CdS deposition bath and subsequent N2 annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition method at a temperature of 80 °C on fluorine-doped tin oxide glass slides (FTO). N2 purged films were deposited by introducing nitrogen gas into the deposition bath throughout the CdS deposition process. Subsequently, both N2 purged and un-purged films underwent annealing at temperatures ranging from 100 to 500 °C for one hour, either in a nitrogen or ambient air environment. Photoelectrochemical (PEC) cell studies reveal that films subjected to both N2 purging and N2 annealing exhibit a notable enhancement of 37.5% and 27% in ISC (short-circuit current) and VOC (open-circuit voltage) values, accompanied by a 5% improvement in optical transmittance compared to conventional CdS thin films. The films annealed at 300 °C demonstrate the highest ISC, VOC, and VFB values, 55 μA, 0.475 V, and −675 mV, respectively. The improved optoelectrical properties in both N2-purged and N2-annealed films are attributed to their well-packed structure, enhanced interconnectivity, and a higher sulfur to cadmium ratio of 0.76 in the films.
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(This article belongs to the Topic Optoelectronic Materials, 2nd Volume)
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Open AccessArticle
Insulator Metal Transition-Based Selector in Crossbar Memory Arrays
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Mahmoud Darwish and László Pohl
Electron. Mater. 2024, 5(1), 17-29; https://doi.org/10.3390/electronicmat5010002 - 23 Feb 2024
Cited by 1
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This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), particularly in terms of endurance, speed, and energy efficiency. This
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This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), particularly in terms of endurance, speed, and energy efficiency. This paper focuses on the architecture of crossbar arrays, where memristive devices are positioned at intersecting metal wires. We emphasize the unique resistive switching mechanisms of memristors and the challenges of sneak path currents and delve into the roles and configurations of selectors, particularly focusing on the one-selector one-resistor (1S1R) architecture with an insulator–metal transition (IMT) based selector. We use SPICE simulations based on defined models to examine a 3 × 3 1S1R ReRAM array with vanadium dioxide selectors and titanium dioxide film memristors, assessing the impact of ambient temperature and critical IMT temperatures on array performance. We highlight the operational regions of low resistive state (LRS) and high resistive state (HRS), providing insights into the electrical behavior of these components under various conditions. Lastly, we demonstrate the impact of selector presence on sneak path currents. This research contributes to the overall understanding of ReRAM crossbar arrays integrated with IMT material-based selectors.
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Open AccessArticle
Nanogranular Strontium Ferromolybdate/Strontium Molybdate Ceramics—A Magnetic Material Possessing a Natural Core-Shell Structure
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Gunnar Suchaneck, Evgenii Artiukh, Nikolay Kalanda, Marta Yarmolich and Gerald Gerlach
Electron. Mater. 2024, 5(1), 1-16; https://doi.org/10.3390/electronicmat5010001 - 31 Jan 2024
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In this work, we demonstrate the preparation of easy-to-fabricate nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics and examine their properties, including tunnel magnetoresistance, magnetic field sensitivity, and temperature coefficient of the tunnel magnetoresistance. The tunnel magnetoresistance of nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics was
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In this work, we demonstrate the preparation of easy-to-fabricate nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics and examine their properties, including tunnel magnetoresistance, magnetic field sensitivity, and temperature coefficient of the tunnel magnetoresistance. The tunnel magnetoresistance of nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics was modeled, yielding values suitable for magnetoresistive sensor applications. Such structures possess a narrow peak of magnetic flux sensibility located at about 80 mT. For magnetic flux measurement, single-domain granules with superparamagnetic behavior should be applied. The predicted TMR magnetic flux sensitivities for granules with superparamagnetic behavior amount to about 7.7% T−1 and 1.5% T−1 for granule sizes of 3 nm and 5 nm, respectively. A drawback of the tunnel magnetoresistance of such nanogranular core-shell ceramics is the unacceptably large value of the temperature coefficient. Acceptable values, lower than 2% K−1, are obtained only at low temperatures (less than 100 K) or large magnetic flux densities (exceeding 6 T). Therefore, a Wheatstone bridge configuration should be adopted for magnetoresistive sensor design to compensate for the effect of temperature.
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Open AccessArticle
Functionalized Thermoplastic Polyurethane Nanofibers: An Innovative Triboelectric Energy Generator
by
Julia Isidora Salas, Diego de Leon, Sk Shamim Hasan Abir, M. Jasim Uddin and Karen Lozano
Electron. Mater. 2023, 4(4), 158-167; https://doi.org/10.3390/electronicmat4040014 - 18 Dec 2023
Cited by 1
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A triboelectric nanogenerator (TENG) is one of the most significantly innovative microdevices for built-in energy harvesting with wearable and portable electronics. In this study, the forcespinning technology was used to synthesize a nanofiber (NF) mat-based TENG. Polyvinylidene fluoride (PVDF) membrane was used as
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A triboelectric nanogenerator (TENG) is one of the most significantly innovative microdevices for built-in energy harvesting with wearable and portable electronics. In this study, the forcespinning technology was used to synthesize a nanofiber (NF) mat-based TENG. Polyvinylidene fluoride (PVDF) membrane was used as the negative triboelectric electrode/pole, and chemically designed and functionalized thermoplastic polyurethane (TPU) was used as the positive electrode/pole for the TENG. The electronic interference, sensitivity, and gate voltage of the synthesized microdevices were investigated using chemically modified bridging of multi-walled carbon nanotubes (MWCNT) with a TPU polymer repeating unit and bare TPU-based positive electrodes. The chemical functionality of TPU NF was integrated during the NF preparation step. The morphological features and the chemical structure of the nanofibers were characterized using a field emission scanning electron microscope and Fourier-transform infrared spectroscopy. The electrical output of the fabricated MWCNT-TPU/PVDF TENG yielded a maximum of 212 V in open circuit and 70 µA in short circuit at 240 beats per minute, which proved to be 79% and 15% higher than the TPU/PDVF triboelectric nanogenerator with an electronic contact area of 3.8 × 3.8 cm2, which indicates that MWCNT enhanced the electron transportation facility, which results in significantly enhanced performance of the TENG. This device was further tested for its charging capacity and sensory performance by taking data from different body parts, e.g., the chest, arms, feet, hands, etc. These results show an impending prospect and versatility of the chemically functionalized materials for next-generation applications in sensing and everyday energy harvesting technology.
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Open AccessCommunication
Theoretical Study of Doping in GaOOH for Electronics Applications
by
Masaya Ichimura
Electron. Mater. 2023, 4(4), 148-157; https://doi.org/10.3390/electronicmat4040013 - 10 Nov 2023
Abstract
GaOOH, having a bandgap of 4.7–4.9 eV, can be regarded as one of several ultrawide-bandgap (UWBG) semiconductors, although it has so far mainly been used as a precursor material of Ga2O3. To examine the possibility of valence control and
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GaOOH, having a bandgap of 4.7–4.9 eV, can be regarded as one of several ultrawide-bandgap (UWBG) semiconductors, although it has so far mainly been used as a precursor material of Ga2O3. To examine the possibility of valence control and application in electronics, impurity levels in GaOOH are investigated using the first-principles density-functional theory calculation. The density values of the states of a supercell including an impurity atom are calculated. According to the results, among the group 14 elements, Si is expected to introduce a shallow donor level, i.e., a free electron is introduced. On the other hand, Ge and Sn introduce a localized state about 0.7 eV below the conduction band edge, and thus cannot act as an effective donor. While Mg and Ca can introduce a free hole and act as a shallow acceptor, Zn and Cd introduce acceptor levels away from the valence band. The transition metal elements (Fe, Co, Ni, Cu) are also considered, but none of them are expected to act as a shallow dopant. Thus, the results suggest that the carrier concentration can be controlled if Si is used for n-type doping, and Mg and Ca for p-type doping. Since GaOOH can be easily deposited using various chemical techniques at low temperatures, GaOOH will potentially be useful for transparent electronic devices.
Full article
(This article belongs to the Special Issue Metal Oxide Semiconductors for Electronic Applications)
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Open AccessCommunication
Size-Controlled ZnO Nanoparticles Synthesized with Thioacetamide and Formation of ZnS Quantum Dots
by
Ju-Seong Kim, Jonghyun Choi and Won Kook Choi
Electron. Mater. 2023, 4(4), 139-147; https://doi.org/10.3390/electronicmat4040012 - 12 Oct 2023
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In this work, we report the first attempt to investigate the dependence of thioacetamide (TAA) on the size of ZnO nanoparticles (NPs) in forming ZnS nanostructures from ZnO. Size-controlled B(blue)_, G(green)_, and Y(yellow)_ZnO quantum dots (QDs) and NC (nanocrystalline)_ZnO NPs were synthesized using
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In this work, we report the first attempt to investigate the dependence of thioacetamide (TAA) on the size of ZnO nanoparticles (NPs) in forming ZnS nanostructures from ZnO. Size-controlled B(blue)_, G(green)_, and Y(yellow)_ZnO quantum dots (QDs) and NC (nanocrystalline)_ZnO NPs were synthesized using a sol–gel process and a hydrothermal method, respectively, and then reacted with an ethanolic TAA solution as a sulfur source. ZnO QDs/NPs began to decompose into ZnS QDs through a reaction with TAA for 5~10 min, so rather than forming a composite of ZnO/ZnS, ZnO QDs and ZnS QDs were separated and remained in a mixed state. At last, ZnO QDs/NPs were completely decomposed into ZnS QDs after a reaction with TAA for 1 h irrespective of the size of ZnO QDs up to ~50 nm. All results indicate that ZnS formation is due to direct crystal growth and/or the chemical conversion of ZnO to ZnS.
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Open AccessEditorial
Inorganic Semiconductors in Electronic Applications
by
Wojciech Pisula
Electron. Mater. 2023, 4(3), 136-138; https://doi.org/10.3390/electronicmat4030011 - 21 Sep 2023
Abstract
Inorganic semiconductors have a wide range of applications in various fields, including electronics, optoelectronics, photovoltaics, and even catalysis [...]
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Open AccessFeature PaperArticle
Enhancing Light Harvesting in Dye-Sensitized Solar Cells through Mesoporous Silica Nanoparticle-Mediated Diffuse Scattering Back Reflectors
by
Jeffrie Fina, Navdeep Kaur, Chen-Yu Chang, Cheng-Yu Lai and Daniela R. Radu
Electron. Mater. 2023, 4(3), 124-135; https://doi.org/10.3390/electronicmat4030010 - 30 Aug 2023
Cited by 4
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Dye-sensitized solar cells (DSSCs) hold unique promise in solar photovoltaics owing to their low-cost fabrication and high efficiency in ambient conditions. However, to improve their commercial viability, effective, and low-cost methods must be employed to enhance their light harvesting capabilities, and hence photovoltaic
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Dye-sensitized solar cells (DSSCs) hold unique promise in solar photovoltaics owing to their low-cost fabrication and high efficiency in ambient conditions. However, to improve their commercial viability, effective, and low-cost methods must be employed to enhance their light harvesting capabilities, and hence photovoltaic (PV) performance. Improving the absorption of incoming light is a critical strategy for maximizing solar cell efficiency while overcoming material limitations. Mesoporous silica nanoparticles (MSNs) were employed herein as a reflective layer on the back of transparent counter electrodes. Chemically synthesized MSNs were applied to DSSCs via bar coating as a facile fabrication step compatible with roll-to-roll manufacturing. The MSNs diffusely scatter the unused incident light transmitted through the DSSCs back into the photoactive layers, increasing the absorption of light by N719 dye molecules. This resulted in a 20% increase in power conversion efficiency (PCE), from 5.57% in a standard cell to 6.68% with the addition of MSNs. The improved performance is attributed to an increase in photon absorption which led to the generation of a higher number of charge carriers, thus increasing the current density in DSSCs. These results were corroborated with electrochemical impedance spectroscopy (EIS), which showed improved charge transport kinetics. The use of MSNs as reflectors proved to be an effective practical method for enhancing the performance of thin film solar cells. Due to silica’s abundance and biocompatibility, MSNs are an attractive material for meeting the low-cost and non-toxic requirements for commercially viable integrated PVs.
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Open AccessArticle
Effect of the RF Power of PECVD on the Crystalline Fractions of Microcrystalline Silicon (μc-Si:H) Films and Their Structural, Optical, and Electronic Properties
by
Mario Moreno, Arturo Torres-Sánchez, Pedro Rosales, Alfredo Morales, Alfonso Torres, Javier Flores, Luis Hernández, Carlos Zúñiga, Carlos Ascencio and Alba Arenas
Electron. Mater. 2023, 4(3), 110-123; https://doi.org/10.3390/electronicmat4030009 - 22 Jun 2023
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In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH4), hydrogen (H2), and argon (Ar) mixtures using the plasma-enhanced chemical vapor deposition (PECVD) technique at 200 °C. Particularly, we studied the effect
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In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH4), hydrogen (H2), and argon (Ar) mixtures using the plasma-enhanced chemical vapor deposition (PECVD) technique at 200 °C. Particularly, we studied the effect of RF power on the crystalline fraction (XC) of the deposited films, and we have correlated the XC with their optical, electrical, and structural characteristics. Different types of characterization were performed in the µc-Si:H film series. We used several techniques, such as Raman scattering spectroscopy, Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM), among others. Our results show that RF power had a strong effect on the XC of the films, and there is an optimal value for producing films with the largest XC.
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Open AccessArticle
Exploring the Impact of Fe-Implantation on the Electrical Characteristics of Al/p-Si Schottky Barrier Diodes
by
Joseph Oluwadamilola Bodunrin, Duke Ateyh Oeba and Sabata Jonas Moloi
Electron. Mater. 2023, 4(2), 95-109; https://doi.org/10.3390/electronicmat4020008 - 16 Jun 2023
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The effects of Fe-implantation on the electrical characteristics of Au/p-Si Schottky barrier diodes (SBDs) were studied using current–voltage (I–V) and capacitance–voltage (C–V) techniques. The Rutherford Backscattering Spectrometry (RBS) and Energy Dispersive
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The effects of Fe-implantation on the electrical characteristics of Au/p-Si Schottky barrier diodes (SBDs) were studied using current–voltage (I–V) and capacitance–voltage (C–V) techniques. The Rutherford Backscattering Spectrometry (RBS) and Energy Dispersive Spectroscopy (EDS) results showed that Fe ions are well implanted and present in the Fe-implanted Si material. The acquired results from I–V and C–V analysis showed that the diodes were well fabricated, and Fe-implantation changed the normal diode’s I–V behaviour from typical exponential to ohmic. The ohmic behaviour was described in terms of the defect levels induced by Fe in the middle of the band gap of Si. The conduction mechanism for both forward and reverse currents was presented, and the effect of Fe-implantation on the conduction mechanisms was investigated. The C–V results show that Fe generates a high density of minority carriers in p-Si, which agreed with the increase in reverse current observed in the I–V results. The diode parameters in terms of saturation current, ideality factor, Schottky barrier height, doping density, and space charge region (SCR) width were used to investigate the effect of Fe in p-Si based diode. Owing to the observed changes, which were analogous to those induced by dopants that improve the radiation hardness of silicon, it was safe to say that Fe can also assist in the quest to improve the radiation hardness of silicon using the defect-engineering method.
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Open AccessArticle
A Neural Network to Decipher Organic Electrochemical Transistors’ Multivariate Responses for Cation Recognition
by
Sébastien Pecqueur, Dominique Vuillaume, Željko Crljen, Ivor Lončarić and Vinko Zlatić
Electron. Mater. 2023, 4(2), 80-94; https://doi.org/10.3390/electronicmat4020007 - 18 May 2023
Cited by 2
Abstract
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Extracting relevant data from real-world experiments is often challenging with intrinsic materials and device property dispersion, such as in organic electronics. However, multivariate data analysis can often be a mean to circumvent this and to extract more information when larger datasets are used
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Extracting relevant data from real-world experiments is often challenging with intrinsic materials and device property dispersion, such as in organic electronics. However, multivariate data analysis can often be a mean to circumvent this and to extract more information when larger datasets are used with learning algorithms instead of physical models. Here, we report on identifying relevant information descriptors for organic electrochemical transistors (OECTs) to classify aqueous electrolytes by ionic composition. Applying periodical gate pulses at different voltage magnitudes, we extracted a reduced number of nonredundant descriptors from the rich drain-current dynamics, which provide enough information to cluster electrochemical data by principal component analysis between Ca2+-, K+-, and Na+-rich electrolytes. With six current values obtained at the appropriate time domain of the device charge/discharge transient, one can identify the cationic identity of a locally probed transient current with only a single micrometric device. Applied to OECT-based neural sensors, this analysis demonstrates the capability for a single nonselective device to retrieve the rich ionic identity of neural activity at the scale of each neuron individually when learning algorithms are applied to the device physics.
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