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Open AccessArticle

Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor

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Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051, Japan
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Collaborative Research Center, Meisei University, Hino-shi, Tokyo 191-8506, Japan
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Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
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Kunshan Branch, Institute of Microelectronics of Chinese Academy of Sciences, Suzhou 215347, China
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University of Chinese Academy of Sciences, Beijing 100049, China
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Institute of Semiconductor & Electronics Technologies, ULVAC, Inc., Susono 410-1231, Japan
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ULVAC Research Center Suzhou Co., Ltd., Suzhou 215026, China
*
Authors to whom correspondence should be addressed.
Micromachines 2019, 10(10), 635; https://doi.org/10.3390/mi10100635
Received: 29 August 2019 / Revised: 18 September 2019 / Accepted: 18 September 2019 / Published: 23 September 2019
(This article belongs to the Section D:Materials and Processing)
Wafer bonding of a silicon carbide (SiC) diaphragm to a patterned SiC substrate coated with aluminum nitride (AlN) film as an insulating layer is a promising choice to fabricate an all-SiC capacitive pressure sensor. To demonstrate the bonding feasibility, a crystalline AlN film with a root-mean-square (RMS) surface roughness less than ~0.70 nm was deposited on a SiC wafer by a pulsed direct current magnetron sputtering method. Room temperature wafer bonding of SiC-AlN by two surface activated bonding (SAB) methods (standard SAB and modified SAB with Si nano-layer sputtering deposition) was studied. Standard SAB failed in the bonding, while the modified SAB achieved the bonding with a bonding energy of ~1.6 J/m2. Both the microstructure and composition of the interface were investigated to understand the bonding mechanisms. Additionally, the surface analyses were employed to confirm the interface investigation. Clear oxidation of the AlN film was found, which is assumed to be the failure reason of direct bonding by standard SAB. View Full-Text
Keywords: all-silicon carbide (SiC); capacitive pressure sensor; room temperature wafer bonding; interface; aluminum nitride (AlN) film all-silicon carbide (SiC); capacitive pressure sensor; room temperature wafer bonding; interface; aluminum nitride (AlN) film
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Mu, F.; Xu, Y.; Shin, S.; Wang, Y.; Xu, H.; Shang, H.; Sun, Y.; Yue, L.; Tsuyuki, T.; Suga, T.; Wang, W.; Chen, D. Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor. Micromachines 2019, 10, 635.

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