Two-dimensional (2D) semiconductors are being considered as alternative channel materials as silicon-based field-effect transistors (FETs) have reached their scaling limits. Recently, air-stable 2D selenium nanosheet FETs with a gate length of 5 &mic...
This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison betw...
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improve...
The FinFET architecture has attracted growing attention over the last two decades since its invention, owing to the good control of the gate electrode over the conductive channel leading to a high immunity from short-channel effects (SCEs). In order...
The use of flaring gate piers (FGPs) along with finite crest-length weirs changes the shape of plunging jets and increases the efficiency of energy dissipation in some projects; however, the FGPs may affect the discharge capacity. In this study, the...
Dual-gate metal-oxide-semiconductor transistors have attracted considerable interest due to their high threshold voltage control capability, higher drain current, and the ability to alleviate the impact of carrier surface scattering at the channel/di...
In this study, threshold voltage (Vth) variability was investigated in silicon nanowire field-effect transistors (SNWFETs) with short gate-lengths of 15–22 nm and various channel diameters (DNW) of 7, 9, and 12 nm. Linear slope and nonzero y-in...
The responsivity of AlGaN/GaN high-electron mobility transistors (HEMTs) when operating as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending on the operating temperature and gate length of the transistors. We ha...
Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambie...
When a sluice gate is arranged in parallel with pumping station units, biased flow occurs in the forebay when the units are operating. The transverse flow velocity in front of the channel inlet is relatively high, and, in severe cases, it may lead to...
The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate archit...
In this paper, we investigate the effect of lateral gate design on performance of a p-type double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of lateral gate length, which modifies the real channel length of the de...
We investigate the effect of random dopant fluctuation (RDF)-induced variability in n-type junctionless (JL) dual-metal gate (DMG) fin field-effect transistors (FinFETs) using a 3D computer-aided design simulation. We show that the drain voltage (VDS...
At the 90-nm node, the rate of transistor miniaturization slows down due to challenges in overcoming the increased leakage current (Ioff). The invention of high-k/metal gate technology at the 45-nm technology node was an enormous step forward in exte...
In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated. The exper...
This study presents a methodological evaluation of the conditions required for successful Mixture-of-Experts (MoE) deployment in continuous biomechanical regression, rather than proposing a new predictive architecture. Using plantar-pressure-based st...
Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films wi...
This paper proposed a high-efficiency thin-barrier gallium nitride (GaN) high electron mobility transistor (HEMT) with scaled gate-length (Lg) for millimeter-wave (mmW) frequency applications. A two-step etching process is adopted in this work, where...
Liquid-gated Graphene Field-Effect Transistors (GFET) are ultrasensitive bio-detection platforms carrying out the graphene’s exceptional intrinsic functionalities. Buffer and dilution factor are prevalent strategies towards the optimum performa...
Poly(p-phenylene ethynylene) (PPE) molecular wires are one-dimensional materials with distinctive properties and can be applied in electronic devices. Here, the approach called first-principles quantum transport is utilized to investigate the PPE mol...
Due to the complicated circuit topology and high switching frequency, field-programmable gate arrays (FPGA) can stand up to the challenges for the hardware in the loop (HIL) real-time simulation of power electronics converters. The Associated Discret...
Computational Fluid Dynamics (CFD) is widely used to predict wind conditions for wind energy production purposes. However, as wind power development expands into areas of even more complex terrain and challenging flow conditions, more research is nee...
This study examines the performance of a GaN HEMT with a 150 nm gate length, fabricated on silicon carbide, across various operational modes, including direct current (DC), radio frequency (RF), and small-signal parameters. The evaluation of DC, RF,...
In the deep submicron regime, FinFET successfully suppresses the leakage current using a 3D fin-like channel substrate, which gets depleted and blocks possible leakage as the gate is applied with a bias wholly wrapping the channel. Fortunately, a sca...
This study presents the results of a one-month validation campaign focused on wind field reconstruction using a dual-scanning LiDAR configuration. The measurement campaign was conducted inland, approximately 6 km from the Thracian Sea coast in northe...
Background: Coronary artery calcification score (CACS) on electrocardiography (ECG)-gated computed tomography (CT) is used for risk stratification of atherosclerotic cardiovascular disease, which requires dedicated analytic software. In this study, w...
Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT...
In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the...
The performance of organic field-effect transistors (OFETs) is highly dependent on the dielectric–semiconductor interface, especially in ion-gel-gated OFETs, where a significantly high carrier density is induced at the interface at a low gate v...
Spider gating modifier toxins (GMTs) are potent modulators of voltage-gated ion channels and have thus attracted attention as drug leads for several pathophysiological conditions. GMTs contain three disulfide bonds organized in an inhibitory cystine...
Biosensing technologies are required for point-of-care testing (POCT). We determine some physical parameters such as molecular charge and mass, redox potential, and reflective index for measuring biological phenomena. Among such technologies, biologi...
Accurate prediction of ship motion is essential for ensuring the safety and efficiency of maritime operations. However, the ship dynamics’ nonlinear, non-stationary, and environment-dependent nature presents significant challenges for reliable...
Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-fr...
Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppress...
With the increase in electronic devices across various applications, there is rising demand for selective carrier control. The split-gate consists of a gate electrode divided into multiple parts, allowing for the independent biasing of electric field...
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate vol...
This paper presents, for the first time, the structure-dependent parameter trade-off optimization on figure-of-merit (RonCoff) and power compression of AlGaN/GaN high electron mobility transistors (HEMTs) for radio frequency (RF) switch applications....
A 2–4 decoder based on all-spin logic (ASL) and magnetic tunnel junction (MTJ) is proposed. The decoder employs five-input minority gates to realize three-input NOR gates, which reduces the circuit size compared to the three-input minority gate...
In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hol...
An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox,...
Two-dimensional (2D) MoS2 have attracted tremendous attention due to their potential applications in future flexible high-frequency electronics. Bilayer MoS2 exhibits the advantages of carrier mobility when compared with monolayer mobility, thus maki...
This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (VBR) characteristics using a TCAD si...
The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET to be experimentally demonstrated. To date, there is no literature available on the compact model of LTFET. In this paper, a compact model of LTFET is pres...
In this paper, we investigated the electrical coupling between the top and bottom transistors in a monolithic 3-dimensional (3D) inverter (M3INV) stacked vertically with junctionless field-effect transistor (JLFET), which is one of candidates to repl...
We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga2O3 metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electric...
Device physics and accurate transistor modeling are necessary to reduce the operating voltage near the threshold for power-constrained circuits. Conventional device modeling for metal-oxide-semiconductor (MOS) transistors focuses on operations in eit...
This research work uses sp3d5s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, whic...
In this study, we developed a V-NAND with an improved IGZO-P type (IP) floating filler (FF) structure based on an IGZO channel verified in previous studies and demonstrated that it has a very fast erase speed through device simulation. The proposed F...
We created tri-gate sub-100 nm In0.53Ga0.47As metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with a bi-layer Al2O3/HfO2 gate stack and investigated the scaling effects on equivalent-oxide-thickness (EOT) and fin-width (Wfin) at gate len...
Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process. They had metal/ferroelectric/insulator/semiconductor stacked-gate structures of Ir/SBT...
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