Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: closed (31 August 2021) | Viewed by 85492
Special Issue Editor
Special Issue Information
Dear Colleagues,
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer a greater expected reliability in tougher operating conditions. Furthermore, in this framework, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide-bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide-bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher operation temperatures, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high efficiency UV-LEDs, and electronics.
After the success of the first edition edited by Dr. Farid Medjdoub, a second volume of the Special Issue “Wide Bandgap Based Devices: Design, Fabrication and Applications” is being launched, aiming to collect high-quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. In particular, the following topics are addressed:
– GaN- and SiC-based devices for power and optoelectronic applications
– Ga2O3 substrate development and Ga2O3 thin film growth, doping, and devices
– AlN-based emerging material and devices
– BN epitaxial growth, characterization, and devices
Prof. Dr. Giovanni Verzellesi
Guest Editor
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Keywords
- wide bandgap devices (WBG)
- ultra-wide bandgap devices (UWBG)
- power
- optoelectronic
- GaN
- Ga2O3
- AlN
- SiC
- BN
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Related Special Issues
- Wide Bandgap Based Devices: Design, Fabrication and Applications in Micromachines (21 articles)
- Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume III in Micromachines (15 articles)
- Wide Bandgap Based Devices: Design, Fabrication and Applications, 4th Edition in Micromachines (3 articles)