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13 pages, 3073 KiB

Open AccessArticle

Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling

by Jian Yin, Sihao Chen, Hang Chen, Shuti Li, Houqiang Fu and Chao Liu

Electronics 2022, 11(13), 1972; https://doi.org/10.3390/electronics11131972 - 24 Jun 2022

Cited by 4 | Viewed by 1837

Abstract

We report gallium nitride (GaN) vertical trench junction barrier Schottky (TJBS) diodes and systematically analyzed the effects of the key design parameters on the reverse and forward characteristics of the devices. By taking advantage of the shielding effects from both the trenches and [...] Read more.

We report gallium nitride (GaN) vertical trench junction barrier Schottky (TJBS) diodes and systematically analyzed the effects of the key design parameters on the reverse and forward characteristics of the devices. By taking advantage of the shielding effects from both the trenches and pn junctions in the TJBS structure, the high electric field at the Schottky contact region can be effectively suppressed. We found that the doping concentration, thickness, and spacing of p-GaN, as well as the depth and angle of the trench sidewalls are closely associated with the electric field distribution and the reverse characteristics of the TJBS diodes. With an optimal set of design parameters, the local electric field crowding at either the corner of the trench or the edge of the p-GaN can also be alleviated, resulting in a boosted breakdown voltage of up to 1250 V in the TJBS diodes. In addition, an analytical model was developed to explore the physical mechanism behind the forward conduction behaviors. We believe that the results can provide a systematical design strategy for the development of low-loss, high-voltage, and high-power GaN power diodes towards an efficient power system. Full article

(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)

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10 pages, 1835 KiB

Open AccessArticle

Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection

by Wenhan Song, Haowen Guo, Yitian Gu, Junmin Zhou, Jin Sui, Baile Chen, Wei Huang and Xinbo Zou

Electronics 2022, 11(13), 1958; https://doi.org/10.3390/electronics11131958 - 22 Jun 2022

Cited by 1 | Viewed by 2105

Abstract

This paper reports a high-performance microwave receiver protector (RP) based on a single gallium nitride (GaN) high electron mobility transistor (HEMT) at an operation frequency of 30 to 3000 MHz. The HEMT-based RP exhibits multi features: high power compression, constant output power, tunable [...] Read more.

This paper reports a high-performance microwave receiver protector (RP) based on a single gallium nitride (GaN) high electron mobility transistor (HEMT) at an operation frequency of 30 to 3000 MHz. The HEMT-based RP exhibits multi features: high power compression, constant output power, tunable threshold power level, and insensitivity to frequency variation. With a low drain voltage (V_ds) of 3 V, constant output power of 9.9 dBm was acquired for input power over its threshold power of 3.2 dBm. Power compression of 13.3 dB was achieved at the input power of P_in = 20 dBm. In addition, adjustable threshold power level P_th could be obtained by merely tuning drain voltage. Transducer gain measurement results were employed to explain the occurrence of output power saturation. Relatively higher P_th was linked to wider gate voltage swing which extended the linear region of the P_out-P_in characteristic. In addition, the GaN HEMT’s power compression capability shows great immunity to frequency variation, which is promising for protecting sensitive receiver components at both low and high frequencies. Finally, the phase shift of the GaN HEMT RP at high input power was measured and analyzed by the nonlinear behaviors of input capacitance C_gs. Full article

(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)

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8 pages, 36652 KiB

Open AccessArticle

Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier

by Pei Shen, Kai Wang, Ling Chen, Yi Fang, Yuqi Liu and Hong Wang

Electronics 2022, 11(13), 1939; https://doi.org/10.3390/electronics11131939 - 21 Jun 2022

Cited by 2 | Viewed by 1112

Abstract

We employed the local p-doped region with a concentration of 3 × 10¹⁶ cm⁻³, 5 × 10¹⁶ cm⁻³ and 7 × 10¹⁶ cm⁻³ in the back-barrier of full-AlGaN high electron mobility transistors (HEMTs). Further enhancement of [...] Read more.

We employed the local p-doped region with a concentration of 3 × 10¹⁶ cm⁻³, 5 × 10¹⁶ cm⁻³ and 7 × 10¹⁶ cm⁻³ in the back-barrier of full-AlGaN high electron mobility transistors (HEMTs). Further enhancement of the breakdown voltage (BV) with less influence on drain–current density (I_D) is demonstrated. The 2D simulation results show that the BV increases with the doping concentration due to the weakening of the electric field. Compared with the traditional Al_0.18Ga_0.82N back-barrier structure, p-type doping with the concentration of 7 × 10¹⁶ cm⁻³ in the back-barrier layer can reduce the peak electric field by 3.06 × 10⁵ V/cm, so that the BV is increased by about 11%, when the maximum drain–current density (I_Dmax) of the device is maintained at 717.8 mA/mm. Furthermore, the BV is closely connected to the geometric characteristics of the local p-doped region. The optimal distance between the doped region and the channel is found to be 150 nm for the doping concentration of 7 × 10¹⁶ cm⁻³. The length of the doped region and the distance between the region and the drain is also found to vary linearly with the BV of the device. Full article

(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)

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16 pages, 6169 KiB

Open AccessArticle

Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter

by Osama Ahmed, Yousuf Khan, Muhammad A. Butt, Nikolay L. Kazanskiy and Svetlana N. Khonina

Electronics 2022, 11(8), 1222; https://doi.org/10.3390/electronics11081222 - 12 Apr 2022

Cited by 2 | Viewed by 2496

Abstract

Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such as lower input/output capacitances, a higher switching speed, and a compact size, resulting in higher-density power outputs and reduced switching losses. This research investigates the power and switching efficiency of GaN-based [...] Read more.

Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such as lower input/output capacitances, a higher switching speed, and a compact size, resulting in higher-density power outputs and reduced switching losses. This research investigates the power and switching efficiency of GaN-based FET in an active-clamp, DC-to-DC flyback converter for step-down application (24 V to 7 V) and compares it with silicon (Si)- based devices in the same circuit topology. The operation is analyzed under various input conditions and output loads such as R, RC, RL, and RLC. The proposed topology can achieve a maximum power-conversion efficiency of 99.6% and can operate at higher frequency values above 1 MHz. The presented GaN-based flyback model can replace conventional Si-based switches in power applications which require high power-efficiency and switching speed in a compact device. Full article

(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)

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8 pages, 2653 KiB

Open AccessArticle

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN_x/SiON as Composite Gate Dielectric

by Xiaodong Zhang, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan, Guohao Yu, Zhihua Dong, Houqiang Fu, Yong Cai, Kai Fu and Baoshun Zhang

Electronics 2022, 11(6), 895; https://doi.org/10.3390/electronics11060895 - 13 Mar 2022

Cited by 5 | Viewed by 2928

Abstract

This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiN_x/SiON composite gate dielectric. The threshold voltage shift in the devices was investigated. The MIS-HEMTs with the SiN_x/SiON composite gate dielectric exhibited superior [...] Read more.

This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiN_x/SiON composite gate dielectric. The threshold voltage shift in the devices was investigated. The MIS-HEMTs with the SiN_x/SiON composite gate dielectric exhibited superior threshold voltage uniformity and small threshold voltage hysteresis than the reference device with SiN_x only gate dielectric. The variation of the device threshold voltage was mainly related to trapping process by the interface states, as confirmed by band diagrams of MIS-HEMTs at different gate biases. Based on frequency-dependent capacitance measurements, interface state densities of the devices with the composite and single gate dielectrics were extracted, where the former showed much smaller interface state density. These results indicate that the SiN_x/SiON composite gate dielectric can effectively improve the device performance of GaN-based MIS-HEMTs and contribute to the development of high-performance GaN electronic devices. Full article

(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)

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22 pages, 93013 KiB

Open AccessArticle

Circuit Techniques in GaN Technology for High-Temperature Environments

by Ahmad Hassan, Jean-Paul Noël, Yvon Savaria and Mohamad Sawan

Electronics 2022, 11(1), 42; https://doi.org/10.3390/electronics11010042 - 23 Dec 2021

Cited by 9 | Viewed by 3203

Abstract

As a wide bandgap semiconductor, Gallium Nitride (GaN) device proves itself as a suitable candidate to implement high temperature (HT) integrated circuits. GaN500 is a technology available from the National Research Council of Canada to serve RF applications. However, this technology has the [...] Read more.

As a wide bandgap semiconductor, Gallium Nitride (GaN) device proves itself as a suitable candidate to implement high temperature (HT) integrated circuits. GaN500 is a technology available from the National Research Council of Canada to serve RF applications. However, this technology has the potential to boost HT electronics to higher ranges of operating temperatures and to higher levels of integration. This paper summarizes the outcome of five years of research investigating the implementation of GaN500-based circuits to support HT applications such as aerospace missions and deep earth drilling. More than 15 integrated circuits were implemented and tested. We performed the HT characterization of passive elements integrated in GaN500 including resistors, capacitors, and inductors up to 600 °C. Moreover, we developed for the first time several digital circuits based on GaN500 technology, including logic gates (NOT, NAND, NOR), ring oscillators, D Flip-Flop, Delay circuits, and voltage reference circuits. The tested circuits are fabricated on a 4 mm × 4 mm chip to validate their functionality over a wide range of temperatures. The logic gates show functionality at HT over 400 °C, while the voltage reference circuits remain stable up to 550 °C. Full article

(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)

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12 pages, 3319 KiB

Open AccessArticle

Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

by Sakhone Pharkphoumy, Vallivedu Janardhanam, Tae-Hoon Jang, Jaejun Park, Kyu-Hwan Shim and Chel-Jong Choi

Electronics 2021, 10(21), 2642; https://doi.org/10.3390/electronics10212642 - 28 Oct 2021

Cited by 6 | Viewed by 2657

Abstract

This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (V_BR) characteristics using a TCAD simulation. The effect of [...] Read more.

This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (V_BR) characteristics using a TCAD simulation. The effect of device geometry on the device performance was explored by varying the device design parameters, such as the field plate length (L_FP), gate-to-drain length (L_GD), gate-to-source length (L_GS), gate length (L_G), thickness of the Si₃N₄ passivation layer (T_ox), thickness of the GaN channel (T_ch), and AlGaN barrier (T_barrier). The V_BR was estimated from the off-state drain current versus the drain voltage (I_DS–V_DS) curve, and it exhibited a strong dependence on the length and thickness of the parameters. The optimum values of V_BR for all the device’s geometrical parameters were evaluated, based on which, an optimized device geometry of the field-plated AlGaN/GaN HEMT structure was proposed. The optimized AlGaN/GaN HEMT structure exhibited V_BR = 970 V at I_GS = 0.14 A/mm, which was considerably higher than the results obtained in previous studies. The results obtained in this study could provide vital information for the selection of the device geometry for the implementation of HEMT structures. Full article

(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)

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9 pages, 13460 KiB

Open AccessArticle

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

by Wei Wang, Yan Liang, Minghui Zhang, Fang Lin, Feng Wen and Hongxing Wang

Electronics 2021, 10(10), 1202; https://doi.org/10.3390/electronics10101202 - 18 May 2021

Cited by 12 | Viewed by 3799

Abstract

The dynamic on-resistance (R_ON) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. The non-monotonic performance of dynamic R_ON with off-state voltage ranging from 50 to 400 V is ascribed to the “leaky dielectric” [...] Read more.

The dynamic on-resistance (R_ON) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. The non-monotonic performance of dynamic R_ON with off-state voltage ranging from 50 to 400 V is ascribed to the “leaky dielectric” model. The highest normalized R_ON value of 1.22 appears at 150 and 200 V. The gradual increase and following maximum of dynamic R_ON are found when the device is exposed to a stress voltage for an extended stress time under 100 and 200 V, which is due to a much longer trapping time compared to detrapping time related to deep acceptors and donors. No obvious R_ON degradation, thanks to the suppressed trapping effect, is observed at higher V_DS. From the multi-pulse test, the dynamic R_ON is seen to be insensitive to the frequency. It is demonstrated that the leakage, especially under source and drain contact, is a key issue in the dynamic resistance degradation. Full article

(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)

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Review

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17 pages, 4529 KiB

Open AccessReview

Challenges of Overcoming Defects in Wide Bandgap Semiconductor Power Electronics

by Brett Setera and Aristos Christou

Electronics 2022, 11(1), 10; https://doi.org/10.3390/electronics11010010 - 22 Dec 2021

Cited by 12 | Viewed by 5008

Abstract

The role of crystal defects in wide bandgap semiconductors and dielectrics under extreme environments (high temperature, high electric and magnetic fields, intense radiation, and mechanical stresses) found in power electronics is reviewed. Understanding defects requires real-time in situ material characterization during material synthesis [...] Read more.

The role of crystal defects in wide bandgap semiconductors and dielectrics under extreme environments (high temperature, high electric and magnetic fields, intense radiation, and mechanical stresses) found in power electronics is reviewed. Understanding defects requires real-time in situ material characterization during material synthesis and when the material is subjected to extreme environmental stress. Wide bandgap semiconductor devices are reviewed from the point of view of the role of defects and their impact on performance. It is shown that the reduction of defects represents a fundamental breakthrough that will enable wide bandgap (WBG) semiconductors to reach full potential. The main emphasis of the present review is to understand defect dynamics in WBG semiconductor bulk and at interfaces during the material synthesis and when subjected to extreme environments. High-brightness X-rays from synchrotron sources and advanced electron microscopy techniques are used for atomic-level material probing to understand and optimize the genesis and movement of crystal defects during material synthesis and extreme environmental stress. Strongly linked multi-scale modeling provides a deeper understanding of defect formation and defect dynamics in extreme environments. Full article

(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)

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