Electronic Nanodevices

Dear Colleagues,

The start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10 nm technologies.

Although the basic operating principles of transistors have remained more or less the same during the transition to the nanoscale regime, several phenomena related to the wave nature of electrons have gradually appeared, and some traditional issues, such as short-channel effects, junction or dielectric leakages, have become more severe. Tunneling and other quantum effects or fluctuations in several transistor parameters due to the granularity of matter have become more relevant.

The new phenomena and issues as well as the technological challenges of the fabrication and manipulation at the nanoscale have spurred an intense theoretical and experimental research activity. New device structures, operating principles, materials, and measurement techniques have emerged, and new approaches to electronic transport and device modeling have become necessary. Examples are the introduction of vertical MOSFETs in addition to the planar ones to enable the multigate approach as well as the development of new tunneling, high-electron mobility, and single-electron devices. The search for new materials such as nanowires, nanotubes, and 2D materials for the transistor channel, dielectrics, and interconnects has been part of the process.

Other than for integrated circuits, new electronic nanodevices, often consisting of nanoscale heterojunctions, have been developed for light emission, transmission, and detection in optoelectronic and photonic systems, as well for new chemical, biological, and environmental sensors.

This Special Issue focuses on the design, fabrication, modeling, and demonstration of nanodevices for electronic, optoelectronic, and sensing applications. Specific topics include the structure, materials, characterization techniques, underlying physical phenomena, and theoretical understanding of transistors, diodes, and memory devices used as building blocks of electronic and optoelectronic systems or sensors.

We encourage the submission of research and review articles as well as of numerical simulations, especially if supported by experimental evidence.

Prof. Dr. Antonio Di Bartolomeo
Guest Editor

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