New CMOS Devices and Their Applications II

Dear Colleagues,

The next decade promises to be full of challenges and opportunities for next-generation CMOS devices. The surge of Big Data, Internet of Things, Artificial Intelligence, and 5G mobile networks will not only require an unprecedented amount of storage capacity, but also demand CMOS technologies be capable of fulfilling quite a variety of requirements related to cost, performance, and reliability. To take full advantage of the new market needs and keep their leading role in the semiconductor device area, the sub-10-nm multi-gate MOSFET, 3D stacked NAND Flash Memory, DRAM, and Emerging memory technologies will have to keep evolving, exploiting new integration schemes, new materials, and new working conditions able to prolong their historical scaling trends.  This Special Issue of Electronics aims at presenting an in-depth discussion of the new CMOS devices and technologies that will have an impact on the electronics world in the next decade. Papers are solicited on next-generation CMOS devices, 3D NAND Flash Memory, neuromorphic devices, and any other technology able to take up the challenges of the next ten years. Topics of interest include, but are not limited to: 

• Sub-10-nm multi-gate MOSFET (FinFET, nanowire, nanoplate, etc.);
• Next-generation CMOS devices (tunnel FETs, negative capacitance FETs, etc.);
• Characterization of 3D stacked NAND Flash Memory and DRAM;
• Emerging memories and neuromorphic devices;
• Applications of new CMOS devices;
• Design, modeling, simulation, and reliability of new devices/circuits;
• Devices and circuits for high-frequency applications.

Dr. Myounggon Kang
Guest Editor

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