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Open AccessFeature PaperArticle
Electronics 2017, 6(3), 62;

Effects of Gate-Length Scaling on Microwave MOSFET Performance

Department of Biomedical and Dental Sciences and Morphofunctional Imaging, University of Messina, 98125 Messina, Italy
Electronic Engineering Department, KU Leuven, B-3001 Leuven, Belgium
Department of Engineering, University of Messina, 98166 Messina, Italy
Author to whom correspondence should be addressed.
Received: 5 August 2017 / Revised: 22 August 2017 / Accepted: 25 August 2017 / Published: 30 August 2017
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This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic unity current-gain cutoff frequency, which is a crucial figure of merit for assessing the high-frequency performance. The experimental data show that the cutoff frequency of the tested devices exhibits a nearly ideal scaling behavior with decreasing gate length. View Full-Text
Keywords: equivalent circuit; gate length; MOSFET; microwave frequency; scattering parameter measurements equivalent circuit; gate length; MOSFET; microwave frequency; scattering parameter measurements

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Crupi, G.; Schreurs, D.M.-P.; Caddemi, A. Effects of Gate-Length Scaling on Microwave MOSFET Performance. Electronics 2017, 6, 62.

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