Next Article in Journal
Radar and Radio Signal Processing
Previous Article in Journal
Mixed-Signal Hardware Security: Attacks and Countermeasures for ΔΣ ADC
Article Menu
Issue 3 (September) cover image

Export Article

Open AccessFeature PaperArticle
Electronics 2017, 6(3), 62; https://doi.org/10.3390/electronics6030062

Effects of Gate-Length Scaling on Microwave MOSFET Performance

1
Department of Biomedical and Dental Sciences and Morphofunctional Imaging, University of Messina, 98125 Messina, Italy
2
Electronic Engineering Department, KU Leuven, B-3001 Leuven, Belgium
3
Department of Engineering, University of Messina, 98166 Messina, Italy
*
Author to whom correspondence should be addressed.
Received: 5 August 2017 / Revised: 22 August 2017 / Accepted: 25 August 2017 / Published: 30 August 2017
Full-Text   |   PDF [2307 KB, uploaded 30 August 2017]   |  

Abstract

This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic unity current-gain cutoff frequency, which is a crucial figure of merit for assessing the high-frequency performance. The experimental data show that the cutoff frequency of the tested devices exhibits a nearly ideal scaling behavior with decreasing gate length. View Full-Text
Keywords: equivalent circuit; gate length; MOSFET; microwave frequency; scattering parameter measurements equivalent circuit; gate length; MOSFET; microwave frequency; scattering parameter measurements
Figures

Graphical abstract

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Crupi, G.; Schreurs, D.M.-P.; Caddemi, A. Effects of Gate-Length Scaling on Microwave MOSFET Performance. Electronics 2017, 6, 62.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top