Special Issue "Nanowire Field-Effect Transistor (FET)"
Deadline for manuscript submissions: closed (29 February 2020).
Interests: semiconductor modelling; variability studies; high performance computing
Interests: simulations of semiconductor devices; wide-bandgap semiconductor devices; ensemble Monte Carlo simulations
Interests: simulations of semiconductor devices; variability effects; nanowires; FinFETS
In the last few years, the main semiconductor industries have introduced multi-gate non-planar transistors in their core business with applications to memories and logical integrated circuits in order to achieve a larger integration on chip, increase performance, and reduce energy consumption. There is intense research underway to keep developing these devices and address their limitations in order to continue transistor scaling while further improving performance.
Nanowire Field-Effect Transistors (NW-FETs) are nowadays one of the strongest contenders to replace Fin Field-Effect Transistors (FinFETs) in the following technological nodes, because of their superior electrostatic control of the channel transport via a gate-all-around gate.
This Special Issue represents a good opportunity for researchers around the world to disseminate their recent progress related to NW-FETs, from three different points of view: Physics, technology and modelling. Therefore, of particular interest for this Special Issue are material properties, fabrication, design optimization, characterization, numerical and analytical modelling, and variability and circuit design.
If you need any further information about this Special Issue, please do not hesitate to contact me.
Prof. Antonio García-Loureiro
Prof. Karol Kalna
Dr. Natalia Seoane
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- nanowire Field-Effect Transistors
- material properties
- circuit design