Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
6.0
3.0
Journals
Micromachines
Special Issues
RF and Power Electronic Devices and Applications, 2nd Edition
share announcement

RF and Power Electronic Devices and Applications, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: 31 July 2026 | Viewed by 1128

Special Issue Editors

Dr. Hao Lu

E-Mail Website
Guest Editor
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: wide-bandgap semiconductor device, GaN HEMT, RF and mmWave devices; high-frequency applications
Prof. Dr. Yuqi Wei

E-Mail Website
Guest Editor
State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Interests: semiconductor characterization; active gate driver; high-frequency power converter
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The advent of 5G and beyond 5G (B5G) wireless networks is revolutionizing connectivity, enabling faster speeds and significantly enhancing quality of life through applications like smart cities, autonomous vehicles, and the Internet of Things (IoT). Concurrently, electric vehicles (EVs) are capturing an increasing share of the market, promising a more efficient and sustainable future by reducing carbon emissions and reliance on fossil fuels. These advancements create substantial demands for high-performance semiconductor devices, particularly in the fields of RF and power electronics, where wide-bandgap (WBG) devices are playing a crucial role in achieving superior efficiency and reliability.

This Special Issue aims to gather cutting-edge developments in novel RF and power electronics devices and their applications. We welcome contributions covering, but not limited to, the following topics:

  • Wide-bandgap devices (GaN, Ga2O3, AlN, etc.) and applications;
  • High-frequency RF/mmWave devices and applications;
  • Advanced device processing;
  • Device reliability;
  • Device characterization;
  • Gate driver design for semiconductors;
  • WBG-based power converters.

We invite researchers and industry experts to submit their latest findings and reviews to contribute to the advancement of this dynamic field.

Dr. Hao Lu
Prof. Dr. Yuqi Wei
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • gallium nitride HEMT
  • power electronics
  • RF and mmWave device
  • power converter

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • Reprint: MDPI Books provides the opportunity to republish successful Special Issues in book format, both online and in print.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

17 pages, 3606 KB  
Article
Graphene-Based Chemical Field-Effect Transistors: Impact of Electric Double Layer Model and Quantum Capacitance on Na+ Detection Capabilities
by Ghassem Baridi, Arslan Liaquat, Leonardo Martini, Luca Nappi, Federico Rapuzzi, Vito Clericò, El Hadj Abidi, Yahya Moubarak Meziani, Mario Amado, Enrique Diez, Giorgia Brancolini, Luigi Rovati and Francesco Rossella
Micromachines 2026, 17(4), 433; https://doi.org/10.3390/mi17040433 - 31 Mar 2026
Viewed by 471
Abstract
Graphene-based ion-sensitive field-effect transistors can operate as biosensors by utilizing the formation of an electric double layer at the interface between the electrolyte and the graphene channel, enabling high sensitivity, scalability, and cost-effective fabrication. In this work, we focus on the working principles [...] Read more.
Graphene-based ion-sensitive field-effect transistors can operate as biosensors by utilizing the formation of an electric double layer at the interface between the electrolyte and the graphene channel, enabling high sensitivity, scalability, and cost-effective fabrication. In this work, we focus on the working principles and current methodologies associated with these devices, making a comparative analysis of different models that describe the electric double layer in the electrolyte, referring to sodium ions (Na+) as a case study for the detection performance of the graphene biosensor, and taking into account the impact of graphene quantum capacitance. Our study addresses the sensitivity of graphene field-effect transistors within the framework of the Gouy–Chapman model, as well as the Stern model, computing device sensitivities of 3200 V/M and 5500 V/M, respectively. By incorporating the impact of graphene’s quantum capacitance in the calculations, increased sensitivity up to 5620 V/M was found. The present work shines light on the rationalization of graphene-based biosensors’ operation and performance. Full article
(This article belongs to the Special Issue RF and Power Electronic Devices and Applications, 2nd Edition)
►▼ Show Figures

Figure 1

13 pages, 3401 KB  
Article
Structure-Dependent Parameter Trade-Off Optimization on RonCoff and Power Compression of AlGaN/GaN HEMTs for RF Switch Application
by Xu Zou, Meng Zhang, Ling Yang, Bin Hou, Mei Wu, Chupeng Yi, Hao Lu, Mao Jia, Qian Yu, Yutong Jiang, Xiaohua Ma and Yue Hao
Micromachines 2026, 17(2), 163; https://doi.org/10.3390/mi17020163 - 27 Jan 2026
Viewed by 446
Abstract
This paper presents, for the first time, the structure-dependent parameter trade-off optimization on figure-of-merit (RonCoff) and power compression of AlGaN/GaN high electron mobility transistors (HEMTs) for radio frequency (RF) switch applications. For GaN HEMTs operating in switching mode, [...] Read more.
This paper presents, for the first time, the structure-dependent parameter trade-off optimization on figure-of-merit (RonCoff) and power compression of AlGaN/GaN high electron mobility transistors (HEMTs) for radio frequency (RF) switch applications. For GaN HEMTs operating in switching mode, it was demonstrated that RonCoff can be effectively reduced by increasing the gate foot length (Lg_foot), decreasing the gate cap length (Lg_cap), reducing the gate bias resistance (rg), and adopting a high work function metal for the gate electrode (Φg). However, these parameter adjustments affect power compression and RonCoff in opposing manners. This paper also presents supplementary research on the effects of source-drain spacing (Lds) and gate width (Wg) on switching performance. This research achieves a dynamic balancing method for structural parameters, delivering application-specific design rules for different scenarios ranging from high-frequency to high-power applications. Full article
(This article belongs to the Special Issue RF and Power Electronic Devices and Applications, 2nd Edition)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-2
Back to TopTop