Wide Bandgap Semiconductor Electronics and Devices

Topic Information

Dear Colleagues,

Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC), gallium nitride (GaN), and emerging materials like gallium oxide (Ga₂O₃) and diamond, have revolutionized the fields of electronics and optoelectronics due to their superior electrical, thermal, and optical properties. Their high breakdown voltage, low on-resistance, and excellent thermal conductivity make them ideal for power electronics, enabling energy-efficient devices with enhanced performance and miniaturization. In optoelectronics, WBG materials support high-power light-emitting diodes (LEDs), laser diodes, and ultraviolet photodetectors, expanding applications in lighting, communication, and sensing. Additionally, the ability of WBG semiconductors to operate at higher temperatures and frequencies than conventional silicon-based materials makes them critical for advanced RF and microwave systems. Recent advancements in material synthesis, defect engineering, and device fabrication techniques have significantly improved the performance and reliability of WBG-based devices. However, challenges remain in cost-effective large-scale production, material quality, long-term reliability, and interface engineering, which hinder widespread adoption. This issue explores the latest developments in WBG semiconductor materials, device architectures, and emerging applications, highlighting the potential breakthroughs in high-power electronics, high-frequency communication, and next-generation optoelectronic systems. Addressing current limitations will pave the way for the next generation of energy-efficient and high-performance electronic and optoelectronic devices.

Prof. Dr. Joseph Bernstein
Dr. Asaf Albo
Topic Editors

Keywords

Participating Journals

Journal Name	Impact Factor	CiteScore	Launched Year	First Decision (median)	APC
Electronics electronics	2.6	6.1	2012	16.8 Days	CHF 2400	Submit
Eng eng	2.4	3.2	2020	19.7 Days	CHF 1400	Submit
Materials materials	3.2	6.4	2008	15.2 Days	CHF 2600	Submit
Micro micro	1.9	3.2	2021	28.1 Days	CHF 1200	Submit
Micromachines micromachines	3.0	6.0	2010	17.2 Days	CHF 2100	Submit

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Published Papers (2 papers)

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All Electronics Eng Materials Micro Micromachines

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9 pages, 1789 KiB  

Open AccessCommunication

Near-Field Imaging of Hybrid Surface Plasmon-Phonon Polaritons on n-GaN Semiconductor

by Vytautas Janonis, Adrian Cernescu, Pawel Prystawko, Regimantas Januškevičius, Simonas Indrišiūnas and Irmantas Kašalynas

Materials 2025, 18(12), 2849; https://doi.org/10.3390/ma18122849 - 17 Jun 2025

Viewed by 244

Abstract

Near-field imaging of the hybrid surface plasmon-phonon polaritons on the n-GaN semiconductor was performed using a scattering scanning near-field optical microscope at the selected frequencies of 920 cm⁻¹ and 570 cm⁻¹. The experimental measurements and numerical modeling data were in [...] Read more.

Near-field imaging of the hybrid surface plasmon-phonon polaritons on the n-GaN semiconductor was performed using a scattering scanning near-field optical microscope at the selected frequencies of 920 cm⁻¹ and 570 cm⁻¹. The experimental measurements and numerical modeling data were in good agreement, revealing the large propagation distances on the n-GaN semiconductor and other insights which could be obtained by analyzing the dispersion characteristics of hybrid polaritons. In particular, the decay lengths of polaritons at the excitation frequency of 920 cm⁻¹ were measured to be up to 25 and 30 µm in experiment and theory, respectively. In the case of excitation at the frequency of 570 cm⁻¹, the surface plasmon-phonon polaritons’ decay distances were 25 µm and 105 µm, respectively, noting the limitations of the near-field optical microscope setups used. Dispersion characteristics of the resonant frequency and the damping rate of hybrid polaritons were numerically modeled and compared with the analytical calculations, validating the need for further experiment improvements. The launch conditions for the near-field observation of extraordinary coherence of the surface plasmon-phonon polaritons were also discussed. Full article

(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)

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14 pages, 4015 KiB  

Open AccessArticle

Effect of Dual Al₂O₃ MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT

by Yuan Li, Yong Huang, Jing Li, Huiqing Sun and Zhiyou Guo

Micromachines 2025, 16(6), 687; https://doi.org/10.3390/mi16060687 - 7 Jun 2025

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Abstract

A dual Al₂O₃ MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cutoff [...] Read more.

A dual Al₂O₃ MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cutoff frequency (f_T) and 92% improvements in maximum oscillation frequency (f_max) compared to conventional HEMTs (from 7.1 GHz to 13.1 GHz and 17.5 GHz to 33.6 GHz, respectively). As for direct-current characteristics, a remarkable reduction in off-state gate leakage current and a 26% enhancement in the maximum saturation drain current (from 519 mA·mm⁻¹ to 658 A·mm⁻¹) are manifested in HEMTs with new structures. The maximum transconductance (g_m) is also raised from 209 mS·mm⁻¹ to 246 mS·mm⁻¹. Correspondingly, almost unchanged gate–source capacitance curves and gate–drain capacitance curves are also discussed to explain the electrical characteristic mechanism. These results indicate the superiority of using a dual Al₂O₃ MIS gate structure in GaN-based HEMTs to promote the RF and DC performance, providing a reference for further development in a miniwatt antenna amplifier and sub-6G frequencies of operation. Full article

(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)

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