Topic Editors

Department of Electrical Engineering and Electronics, Ariel University, Ariel 40700, Israel
Department of Electrical Engineering and Electronics, Ariel University, Ariel 40700, Israel

Wide Bandgap Semiconductor Electronics and Devices

Abstract submission deadline
30 April 2026
Manuscript submission deadline
31 July 2026
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3251

Topic Information

Dear Colleagues,

Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC), gallium nitride (GaN), and emerging materials like gallium oxide (Ga2O3) and diamond, have revolutionized the fields of electronics and optoelectronics due to their superior electrical, thermal, and optical properties. Their high breakdown voltage, low on-resistance, and excellent thermal conductivity make them ideal for power electronics, enabling energy-efficient devices with enhanced performance and miniaturization. In optoelectronics, WBG materials support high-power light-emitting diodes (LEDs), laser diodes, and ultraviolet photodetectors, expanding applications in lighting, communication, and sensing. Additionally, the ability of WBG semiconductors to operate at higher temperatures and frequencies than conventional silicon-based materials makes them critical for advanced RF and microwave systems. Recent advancements in material synthesis, defect engineering, and device fabrication techniques have significantly improved the performance and reliability of WBG-based devices. However, challenges remain in cost-effective large-scale production, material quality, long-term reliability, and interface engineering, which hinder widespread adoption. This issue explores the latest developments in WBG semiconductor materials, device architectures, and emerging applications, highlighting the potential breakthroughs in high-power electronics, high-frequency communication, and next-generation optoelectronic systems. Addressing current limitations will pave the way for the next generation of energy-efficient and high-performance electronic and optoelectronic devices.

Prof. Dr. Joseph Bernstein
Dr. Asaf Albo
Topic Editors

Keywords

  • SiC
  • GaN
  • Ga2O3
  • diamond
  • wide bandgap (WBG)
  • thermal properties
  • reliability
  • high power
  • microwave
  • interface engineering
  • microwave
  • optoelectronics

Participating Journals

Journal Name Impact Factor CiteScore Launched Year First Decision (median) APC
Electronics
electronics
2.6 6.1 2012 16.8 Days CHF 2400 Submit
Eng
eng
2.4 3.2 2020 19.7 Days CHF 1400 Submit
Materials
materials
3.2 6.4 2008 15.2 Days CHF 2600 Submit
Micro
micro
1.9 3.2 2021 28.1 Days CHF 1200 Submit
Micromachines
micromachines
3.0 6.0 2010 17.2 Days CHF 2100 Submit

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Published Papers (4 papers)

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14 pages, 2205 KB  
Article
Optimization of Thermal Stress in High-Power Semiconductor Laser Array Packaging
by Lei Cheng, Bingxing Wei, Xuanjun Dai, Yanan Bao and Huaqing Sun
Electronics 2025, 14(16), 3336; https://doi.org/10.3390/electronics14163336 - 21 Aug 2025
Viewed by 501
Abstract
To suppress the thermal stress in high-power semiconductor laser array packaging, the classic asymmetric heat dissipation structure of the array packaging was transformed into a symmetric one by incorporating microchannel heat sinks. This effectively reduced the maximum temperature, maximum thermal stress, thermal resistance, [...] Read more.
To suppress the thermal stress in high-power semiconductor laser array packaging, the classic asymmetric heat dissipation structure of the array packaging was transformed into a symmetric one by incorporating microchannel heat sinks. This effectively reduced the maximum temperature, maximum thermal stress, thermal resistance, and maximum vertical displacement of the semiconductor laser array. Using the response surface methodology, mathematical models were established to correlate the maximum temperature, maximum thermal stress, and maximum vertical displacement of the semiconductor laser array with the radius, height, and spacing of circular micro-pin fins. A genetic algorithm was then employed to perform multi-objective optimization of these parameters. The results demonstrate that, compared to the original packaging configuration, the optimized semiconductor laser array exhibits a maximum temperature reduction of 16.56 °C, a maximum thermal stress decrease of 24.01 MPa, and a reduction in the maximum vertical displacement of the chip by 0.77 μm. Full article
(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)
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17 pages, 2806 KB  
Article
Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications
by Mohammad Abdul Alim and Christophe Gaquiere
Micromachines 2025, 16(8), 932; https://doi.org/10.3390/mi16080932 - 13 Aug 2025
Viewed by 625
Abstract
This study examines the performance of a GaN HEMT with a 150 nm gate length, fabricated on silicon carbide, across various operational modes, including direct current (DC), radio frequency (RF), and small-signal parameters. The evaluation of DC, RF, and small-signal performance under diverse [...] Read more.
This study examines the performance of a GaN HEMT with a 150 nm gate length, fabricated on silicon carbide, across various operational modes, including direct current (DC), radio frequency (RF), and small-signal parameters. The evaluation of DC, RF, and small-signal performance under diverse bias conditions remains a relatively unexplored area of study for this specific technology. The DC characteristics revealed relatively little Ids at zero gate and drain voltages, and the current grew as Vgs increased. Essential measurements include Idss at 109 mA and Idssm at 26 mA, while the peak gm was 62 mS. Because transconductance is sensitive to variations in Vgs and Vds, it shows “Vth roll-off,” where Vth decreases as Vds increases. The transfer characteristics corroborated this trend, illustrating the impact of drain-induced barrier lowering (DIBL) on threshold voltage (Vth) values, which spanned from −5.06 V to −5.71 V across varying drain-source voltages (Vds). The equivalent-circuit technique revealed substantial non-linear behaviors in capacitances such as Cgs and Cgd concerning Vgs and Vds, while also identifying extrinsic factors including parasitic capacitances and resistances. Series resistances (Rgs and Rgd) decreased as Vgs increased, thereby enhancing device conductivity. As Vgs approached neutrality, particularly at elevated Vds levels, the intrinsic transconductance (gmo) and time constants (τgm, τgs, and τgd) exhibited enhanced performance. ft and fmax, which are essential for high-frequency applications, rose with decreasing Vgs and increasing Vds. When Vgs approached −3 V, the S21 and Y21 readings demonstrated improved signal transmission, with peak S21 values of approximately 11.2 dB. The stability factor (K), which increased with Vds, highlighted the device’s operational limits. The robust correlation between simulation and experimental data validated the equivalent-circuit model, which is essential for enhancing design and creating RF circuits. Further examination of bias conditions would enhance understanding of the device’s performance. Full article
(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)
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9 pages, 1789 KB  
Communication
Near-Field Imaging of Hybrid Surface Plasmon-Phonon Polaritons on n-GaN Semiconductor
by Vytautas Janonis, Adrian Cernescu, Pawel Prystawko, Regimantas Januškevičius, Simonas Indrišiūnas and Irmantas Kašalynas
Materials 2025, 18(12), 2849; https://doi.org/10.3390/ma18122849 - 17 Jun 2025
Viewed by 529
Abstract
Near-field imaging of the hybrid surface plasmon-phonon polaritons on the n-GaN semiconductor was performed using a scattering scanning near-field optical microscope at the selected frequencies of 920 cm−1 and 570 cm−1. The experimental measurements and numerical modeling data were in [...] Read more.
Near-field imaging of the hybrid surface plasmon-phonon polaritons on the n-GaN semiconductor was performed using a scattering scanning near-field optical microscope at the selected frequencies of 920 cm−1 and 570 cm−1. The experimental measurements and numerical modeling data were in good agreement, revealing the large propagation distances on the n-GaN semiconductor and other insights which could be obtained by analyzing the dispersion characteristics of hybrid polaritons. In particular, the decay lengths of polaritons at the excitation frequency of 920 cm−1 were measured to be up to 25 and 30 µm in experiment and theory, respectively. In the case of excitation at the frequency of 570 cm−1, the surface plasmon-phonon polaritons’ decay distances were 25 µm and 105 µm, respectively, noting the limitations of the near-field optical microscope setups used. Dispersion characteristics of the resonant frequency and the damping rate of hybrid polaritons were numerically modeled and compared with the analytical calculations, validating the need for further experiment improvements. The launch conditions for the near-field observation of extraordinary coherence of the surface plasmon-phonon polaritons were also discussed. Full article
(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)
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14 pages, 4015 KB  
Article
Effect of Dual Al2O3 MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT
by Yuan Li, Yong Huang, Jing Li, Huiqing Sun and Zhiyou Guo
Micromachines 2025, 16(6), 687; https://doi.org/10.3390/mi16060687 - 7 Jun 2025
Viewed by 1060
Abstract
A dual Al2O3 MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cutoff [...] Read more.
A dual Al2O3 MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cutoff frequency (fT) and 92% improvements in maximum oscillation frequency (fmax) compared to conventional HEMTs (from 7.1 GHz to 13.1 GHz and 17.5 GHz to 33.6 GHz, respectively). As for direct-current characteristics, a remarkable reduction in off-state gate leakage current and a 26% enhancement in the maximum saturation drain current (from 519 mA·mm−1 to 658 A·mm−1) are manifested in HEMTs with new structures. The maximum transconductance (gm) is also raised from 209 mS·mm−1 to 246 mS·mm−1. Correspondingly, almost unchanged gate–source capacitance curves and gate–drain capacitance curves are also discussed to explain the electrical characteristic mechanism. These results indicate the superiority of using a dual Al2O3 MIS gate structure in GaN-based HEMTs to promote the RF and DC performance, providing a reference for further development in a miniwatt antenna amplifier and sub-6G frequencies of operation. Full article
(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)
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