Topic Editors

Department of Electrical Engineering and Electronics, Ariel University, Ariel 40700, Israel
Department of Electrical Engineering and Electronics, Ariel University, Ariel 40700, Israel

Wide Bandgap Semiconductor Electronics and Devices

Abstract submission deadline
30 April 2026
Manuscript submission deadline
31 July 2026
Viewed by
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Topic Information

Dear Colleagues,

Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC), gallium nitride (GaN), and emerging materials like gallium oxide (Ga2O3) and diamond, have revolutionized the fields of electronics and optoelectronics due to their superior electrical, thermal, and optical properties. Their high breakdown voltage, low on-resistance, and excellent thermal conductivity make them ideal for power electronics, enabling energy-efficient devices with enhanced performance and miniaturization. In optoelectronics, WBG materials support high-power light-emitting diodes (LEDs), laser diodes, and ultraviolet photodetectors, expanding applications in lighting, communication, and sensing. Additionally, the ability of WBG semiconductors to operate at higher temperatures and frequencies than conventional silicon-based materials makes them critical for advanced RF and microwave systems. Recent advancements in material synthesis, defect engineering, and device fabrication techniques have significantly improved the performance and reliability of WBG-based devices. However, challenges remain in cost-effective large-scale production, material quality, long-term reliability, and interface engineering, which hinder widespread adoption. This issue explores the latest developments in WBG semiconductor materials, device architectures, and emerging applications, highlighting the potential breakthroughs in high-power electronics, high-frequency communication, and next-generation optoelectronic systems. Addressing current limitations will pave the way for the next generation of energy-efficient and high-performance electronic and optoelectronic devices.

Prof. Dr. Joseph Bernstein
Dr. Asaf Albo
Topic Editors

Keywords

  • SiC
  • GaN
  • Ga2O3
  • diamond
  • wide bandgap (WBG)
  • thermal properties
  • reliability
  • high power
  • microwave
  • interface engineering
  • microwave
  • optoelectronics

Participating Journals

Journal Name Impact Factor CiteScore Launched Year First Decision (median) APC
Electronics
electronics
2.6 5.3 2012 16.4 Days CHF 2400 Submit
Eng
eng
- 2.1 2020 21.5 Days CHF 1200 Submit
Materials
materials
3.1 5.8 2008 13.9 Days CHF 2600 Submit
Micro
micro
- - 2021 24.5 Days CHF 1000 Submit
Micromachines
micromachines
3.0 5.2 2010 16.2 Days CHF 2100 Submit

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