Wide Bandgap Semiconductor Electronics and Devices

Topic Information

Dear Colleagues,

Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC), gallium nitride (GaN), and emerging materials like gallium oxide (Ga₂O₃) and diamond, have revolutionized the fields of electronics and optoelectronics due to their superior electrical, thermal, and optical properties. Their high breakdown voltage, low on-resistance, and excellent thermal conductivity make them ideal for power electronics, enabling energy-efficient devices with enhanced performance and miniaturization. In optoelectronics, WBG materials support high-power light-emitting diodes (LEDs), laser diodes, and ultraviolet photodetectors, expanding applications in lighting, communication, and sensing. Additionally, the ability of WBG semiconductors to operate at higher temperatures and frequencies than conventional silicon-based materials makes them critical for advanced RF and microwave systems. Recent advancements in material synthesis, defect engineering, and device fabrication techniques have significantly improved the performance and reliability of WBG-based devices. However, challenges remain in cost-effective large-scale production, material quality, long-term reliability, and interface engineering, which hinder widespread adoption. This issue explores the latest developments in WBG semiconductor materials, device architectures, and emerging applications, highlighting the potential breakthroughs in high-power electronics, high-frequency communication, and next-generation optoelectronic systems. Addressing current limitations will pave the way for the next generation of energy-efficient and high-performance electronic and optoelectronic devices.

Prof. Dr. Joseph Bernstein
Dr. Asaf Albo
Topic Editors

Keywords

Participating Journals

Journal Name	Impact Factor	CiteScore	Launched Year	First Decision (median)	APC
Electronics electronics	2.6	6.1	2012	16.8 Days	CHF 2400	Submit
Eng eng	2.4	3.2	2020	19.7 Days	CHF 1400	Submit
Materials materials	3.2	6.4	2008	15.2 Days	CHF 2600	Submit
Micro micro	1.9	3.2	2021	28.1 Days	CHF 1200	Submit
Micromachines micromachines	3.0	6.0	2010	17.2 Days	CHF 2100	Submit

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Published Papers (4 papers)

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All Electronics Eng Materials Micro Micromachines

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14 pages, 2205 KB  

Open AccessArticle

Optimization of Thermal Stress in High-Power Semiconductor Laser Array Packaging

by Lei Cheng, Bingxing Wei, Xuanjun Dai, Yanan Bao and Huaqing Sun

Electronics 2025, 14(16), 3336; https://doi.org/10.3390/electronics14163336 - 21 Aug 2025

Viewed by 503

Abstract

To suppress the thermal stress in high-power semiconductor laser array packaging, the classic asymmetric heat dissipation structure of the array packaging was transformed into a symmetric one by incorporating microchannel heat sinks. This effectively reduced the maximum temperature, maximum thermal stress, thermal resistance, [...] Read more.

To suppress the thermal stress in high-power semiconductor laser array packaging, the classic asymmetric heat dissipation structure of the array packaging was transformed into a symmetric one by incorporating microchannel heat sinks. This effectively reduced the maximum temperature, maximum thermal stress, thermal resistance, and maximum vertical displacement of the semiconductor laser array. Using the response surface methodology, mathematical models were established to correlate the maximum temperature, maximum thermal stress, and maximum vertical displacement of the semiconductor laser array with the radius, height, and spacing of circular micro-pin fins. A genetic algorithm was then employed to perform multi-objective optimization of these parameters. The results demonstrate that, compared to the original packaging configuration, the optimized semiconductor laser array exhibits a maximum temperature reduction of 16.56 °C, a maximum thermal stress decrease of 24.01 MPa, and a reduction in the maximum vertical displacement of the chip by 0.77 μm. Full article

(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)

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17 pages, 2806 KB  

Open AccessArticle

Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications

by Mohammad Abdul Alim and Christophe Gaquiere

Micromachines 2025, 16(8), 932; https://doi.org/10.3390/mi16080932 - 13 Aug 2025

Viewed by 628

Abstract

This study examines the performance of a GaN HEMT with a 150 nm gate length, fabricated on silicon carbide, across various operational modes, including direct current (DC), radio frequency (RF), and small-signal parameters. The evaluation of DC, RF, and small-signal performance under diverse [...] Read more.

This study examines the performance of a GaN HEMT with a 150 nm gate length, fabricated on silicon carbide, across various operational modes, including direct current (DC), radio frequency (RF), and small-signal parameters. The evaluation of DC, RF, and small-signal performance under diverse bias conditions remains a relatively unexplored area of study for this specific technology. The DC characteristics revealed relatively little I_ds at zero gate and drain voltages, and the current grew as V_gs increased. Essential measurements include I_dss at 109 mA and I_dssm at 26 mA, while the peak g_m was 62 mS. Because transconductance is sensitive to variations in V_gs and V_ds, it shows “Vth _roll-off,” where Vth decreases as V_ds increases. The transfer characteristics corroborated this trend, illustrating the impact of drain-induced barrier lowering (DIBL) on threshold voltage (Vth) values, which spanned from −5.06 V to −5.71 V across varying drain-source voltages (V_ds). The equivalent-circuit technique revealed substantial non-linear behaviors in capacitances such as C_gs and C_gd concerning V_gs and V_ds, while also identifying extrinsic factors including parasitic capacitances and resistances. Series resistances (R_gs and R_gd) decreased as V_gs increased, thereby enhancing device conductivity. As V_gs approached neutrality, particularly at elevated V_ds levels, the intrinsic transconductance (g_mo) and time constants (τ_gm, τ_gs, and τ_gd) exhibited enhanced performance. f_t and f_max, which are essential for high-frequency applications, rose with decreasing V_gs and increasing V_ds. When V_gs approached −3 V, the S₂₁ and Y₂₁ readings demonstrated improved signal transmission, with peak S₂₁ values of approximately 11.2 dB. The stability factor (K), which increased with V_ds, highlighted the device’s operational limits. The robust correlation between simulation and experimental data validated the equivalent-circuit model, which is essential for enhancing design and creating RF circuits. Further examination of bias conditions would enhance understanding of the device’s performance. Full article

(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)

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9 pages, 1789 KB  

Open AccessCommunication

Near-Field Imaging of Hybrid Surface Plasmon-Phonon Polaritons on n-GaN Semiconductor

by Vytautas Janonis, Adrian Cernescu, Pawel Prystawko, Regimantas Januškevičius, Simonas Indrišiūnas and Irmantas Kašalynas

Materials 2025, 18(12), 2849; https://doi.org/10.3390/ma18122849 - 17 Jun 2025

Viewed by 529

Abstract

Near-field imaging of the hybrid surface plasmon-phonon polaritons on the n-GaN semiconductor was performed using a scattering scanning near-field optical microscope at the selected frequencies of 920 cm⁻¹ and 570 cm⁻¹. The experimental measurements and numerical modeling data were in [...] Read more.

Near-field imaging of the hybrid surface plasmon-phonon polaritons on the n-GaN semiconductor was performed using a scattering scanning near-field optical microscope at the selected frequencies of 920 cm⁻¹ and 570 cm⁻¹. The experimental measurements and numerical modeling data were in good agreement, revealing the large propagation distances on the n-GaN semiconductor and other insights which could be obtained by analyzing the dispersion characteristics of hybrid polaritons. In particular, the decay lengths of polaritons at the excitation frequency of 920 cm⁻¹ were measured to be up to 25 and 30 µm in experiment and theory, respectively. In the case of excitation at the frequency of 570 cm⁻¹, the surface plasmon-phonon polaritons’ decay distances were 25 µm and 105 µm, respectively, noting the limitations of the near-field optical microscope setups used. Dispersion characteristics of the resonant frequency and the damping rate of hybrid polaritons were numerically modeled and compared with the analytical calculations, validating the need for further experiment improvements. The launch conditions for the near-field observation of extraordinary coherence of the surface plasmon-phonon polaritons were also discussed. Full article

(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)

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14 pages, 4015 KB  

Open AccessArticle

Effect of Dual Al₂O₃ MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT

by Yuan Li, Yong Huang, Jing Li, Huiqing Sun and Zhiyou Guo

Micromachines 2025, 16(6), 687; https://doi.org/10.3390/mi16060687 - 7 Jun 2025

Viewed by 1062

Abstract

A dual Al₂O₃ MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cutoff [...] Read more.

A dual Al₂O₃ MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cutoff frequency (f_T) and 92% improvements in maximum oscillation frequency (f_max) compared to conventional HEMTs (from 7.1 GHz to 13.1 GHz and 17.5 GHz to 33.6 GHz, respectively). As for direct-current characteristics, a remarkable reduction in off-state gate leakage current and a 26% enhancement in the maximum saturation drain current (from 519 mA·mm⁻¹ to 658 A·mm⁻¹) are manifested in HEMTs with new structures. The maximum transconductance (g_m) is also raised from 209 mS·mm⁻¹ to 246 mS·mm⁻¹. Correspondingly, almost unchanged gate–source capacitance curves and gate–drain capacitance curves are also discussed to explain the electrical characteristic mechanism. These results indicate the superiority of using a dual Al₂O₃ MIS gate structure in GaN-based HEMTs to promote the RF and DC performance, providing a reference for further development in a miniwatt antenna amplifier and sub-6G frequencies of operation. Full article

(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)

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