8,963 Results Found

This review explores the pharmacological potential of chondroitin sulfate and fucoidan as immunomodulatory agents targeting N-acetylgalactosaminidase (nagalase) to normalize immune responses. Nagalase, an enzyme produced by tumor and virus-infected c...

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simu...

GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most...

Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of nor...

As a representative wide-bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric fiel...

The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate co...

The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer...

In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton...

A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduc...

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate,...

In this study, we propose a simple measurement technique to quantitatively measure the time taken by threshold voltage of normally-off p-GaN AlGaN/GaN HEMTs to recover from a nominal operational gate stress-induced instability. The proposed technique...

Far-field vision-based pose measurement is a crucial technology for applications such as high-resolution Earth observation and space security early warning. However, owing to the perspective imaging model of long-range optical systems, conventional v...

In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-F...

A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al₂O₃/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected in...

A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resi...

Site investigation is costly, slow, and locally destructive, with boreholes spaced by budget rather than by ground variability. Portable electrical resistivity offers a rapid, low-disturbance alternative, but correlations built on absolute resistivit...

We present the mean-time-to-failure (MTTF) calculations for AlGaN/GaN high-electron-mobility transistors (HEMTs) using two independent acceleration factors. MTTF predictions are generally calculated through the Arrhenius relationship, based on channe...

The present paper is devoted to studying the maps corresponding to the suborbital graphs for the normalizer ${\mathsf{\Gamma }}_B\left(N\right)$ of ${\mathsf{\Gamma }}_0\left(N\right)$ modulo N, where N denotes a positive integer. We reveal the complete structure of these maps, finding their vertice...

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the real...

In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (V_TH) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effe...

The equivalence of systems is a crucial concept in multidimensional systems. The Smith normal forms of multivariate polynomial matrices play important roles in the theory of polynomial matrices. In this paper, we mainly study the unimodular equivalen...

Background: Patient-reported dry eye symptoms (DESs), assessed using the Ocular Surface Disease Index (OSDI) and the Symptom Assessment iN Dry Eye (SANDE) questionnaires, were compared in a large sample of patients. Methods: The correlation (Spearman...

The flyback converter with its active cell balancing topology for charging lithium-based batteries in Electrical Vehicles (EV) have been adopted recently into the industry. Electrical Vehicle battery charging requires high current operation in contin...

Greenhouse detection is important with respect to urban and rural planning, yield estimation and crop planning, sustainable development, natural resource management, and risk analysis and damage assessment. The aim of this study is to detect greenhou...

A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high V...

This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a cal...

The present work investigated the effect of Thomson and initial stress in a thermo-porous elastic solid under G-N electromagnetic theory. The Thomson coefficient affects the heat condition equation. A constant Thomson coefficient, instead of traditio...

For a finite commutative ring $\mathfrak{R}$ with identity $1\ne 0$, the weakly zero-divisor graph of $\mathfrak{R}$ denoted as $W\Gamma \left(\mathfrak{R}\right)$ is a simple undirected graph having vertex set as a set of non-zero zero-divisors of $\mathfrak{R}$ and two distinct vertices $\mathfrak{a}$ and $\mathfrak{b}$ are adjacent if a...

A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent mate...

Accurate sensor-based prediction of crop yield and grain quality in-season would enable growers to adjust nitrogen (N) fertilizer management for optimized production. This study assessed the feasibility (and compared the accuracy) of wheat (Triticum ...

Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent pr...

Epigenetics is identified as the study of heritable modifications in gene expression and regulation that do not involve DNA sequence alterations, such as DNA methylation, histone modifications, etc. Importantly, N⁶-methyladenosine (m⁶A) methylation m...

With the growing demand for more efficient power conversion and silicon reaching its theoretical limit, wide bandgap semiconductor devices are emerging as a potential solution. For instance, Gallium Nitride (GaN)-based high-electron-mobility transist...

The deaths of accident occurring in land hazardous material transport (rail and road) is a scale standard for judging accident severity in safety programmes. The f-N curve is a common practice to express the results from past scattered accident data...

Charge carrier traps due to crystal defects in GaN on Si HEMT devices are responsible for dynamic performance degradation, long-term reliability limitations, and peculiar failure modes. The behavior of traps depends on many variables including hetero...

Controllers designed on the basis of an approximate discrete time model can fail when they are applied to the real processes. This is a problem of interest in adaptive symmetry control system theory. In this paper, we introduce the certain polynomial...

Soap applications for cleaning and personal care have been used for more than 4000 years, dating back to the pharaonic period, and have widely proliferated with the appearance of synthetic surfactants a century ago. Synthetic surfactants used to make...

This study proposes an improved YOLO11n-seg instance segmentation model to address the limitations of existing models in accurately identifying mature blueberries in complex greenhouse environments. Current methods often lack sufficient accuracy when...

Given Hilbert space operators $A,B$, and X, let ${▵}_{A,B}$ and ${\delta }_{A,B}$ denote, respectively, the elementary operators ${▵}_{A,B}\left(X\right)=I-AXB$ and the generalised derivation ${\delta }_{A,B}\left(X\right)=AX-XB$. This paper considers the structure of operators...

Background: Idiopathic normal pressure hydrocephalus (iNPH) is a progressive neurological disorder characterized by cognitive decline, gait disturbances, and urinary incontinence. Surgical interventions such as ventriculoperitoneal shunt (VPS) and en...

A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) ion implantation was used, for the first time, to passivate p-GaN, except for the gate area, in order to create a normally off p-GaN/AlGaN/GaN high-el...

Generating high-precision normalized digital surface models (nDSMs) from a single remote sensing image remains a challenging and ill-posed problem due to the absence of reliable geometric constraints. In this work, we show that monocular depth provid...

In this work, the influence of normalizing temperature on vanadium micro-alloyed P460NL1 steel is studied in terms of microstructures and impact toughness. With the normalizing temperature increased from 850 °C to 950 °C, the V(C,N) particles...

In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench s...

The κ-phase gallium oxide (κ-Ga₂O₃) has emerged as a promising material for next-generation electronic devices owing to its ultra-wide band gap, remarkable spontaneous polarization and unique ferroelectricity. We have investigated the two...

Acetaminophen (APAP) overdose induces acute liver damage and even death. The standard therapeutic dose of N-acetyl cysteine (NAC) cannot be applied to every patient, especially those with high-dose APAP poisoning. There is insufficient evidence to pr...

Avian influenza A (H7N9) virus infections frequently lead to acute respiratory distress syndrome and death in humans. The emergence of H7N9 virus infections is a serious public health threat. To identify virus–host interaction differences betwe...

The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG...

Grand-design spiral structures typically emerge in N-body simulations of disk galaxies as barred-spiral configurations forming during the early evolutionary stages of the system. In this study, we explore the dynamical conditions that allow for the f...

Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl₂/BCl₃/SF₆-mixed gas plasma. This etching technique feat...