Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
7.0
3.7
Journals
Materials
Special Issues
Advanced Composite Materials for Next-Generation Electronic Devices
materials-logo
Submit to Special Issue Submit Abstract to Special Issue Review for Materials Propose a Special Issue

Journal Menu

► Journal Menu

Journal Browser

► Journal Browser
share announcement

Advanced Composite Materials for Next-Generation Electronic Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 January 2027 | Viewed by 2660

Editors

Dr. Yang Shi

E-Mail Website
Guest Editor
School of Mechano-Electronic Engineering, Xidian University, Xi’an, China
Interests: electronic materials
Prof. Dr. Junjie Ye

E-Mail Website
Guest Editor
School of Mechano-Electronic Engineering, Xidian University, Xi’an, China
Interests: electronic materials
Dr. Yongkun Wang

E-Mail Website
Guest Editor
School of Mechano-Electronic Engineering, Xidian University, Xi’an 710000, China
Interests: MEMS technology; electronic packaging and microassembly technology; smart materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Advanced composite materials have made remarkable progress over the past decade, demonstrating immense potential in fields where traditional materials fall short, such as flexible electronics, energy storage, sensing, and high-performance computing. To meet the diverse requirements of modern applications, a wide range of advanced composite materials have been developed. Further advancements in next-generation electronic devices demand the deep integration of material design, numerical simulation, reliability analysis, and advanced manufacturing processes to develop high-performance, highly reliable devices.

This Special Issue aims to compile high-quality research papers, short communications, and review articles focusing on the following topics:

Modeling, Simulation, and Design of ME Composites and Devices: multi-physics coupling models, nonlinear behavior simulation, and performance prediction.

Reliability Analysis of Electronic Packaging Systems: failure mechanisms, lifespan evaluation, and reliability enhancement strategies.

Optimization Design of Advanced Composite Materials and Devices: utilizing machine learning, topology optimization, and multi-objective optimization for performance enhancement.

Advanced Manufacturing Processes: precision processing and integration technologies for advanced composite materials and electronic devices.

Characterization and Applications: performance characterization and applications of advanced composite materials.

Through this Special Issue, we hope to identify key milestones in the future research of advanced composite materials for next-generation electronic devices, driving innovation and development in this field.

Dr. Yang Shi
Prof. Dr. Junjie Ye
Dr. Yongkun Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-anonymized peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ME materials
  • electronic packaging devices
  • numerical simulation
  • topology optimization
  • reliability analysis

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • Reprint: MDPI Books provides the opportunity to republish successful Special Issues in book format, both online and in print.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (4 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

Jump to: Review

20 pages, 4673 KB  
Article
Design and Analysis of a Bézier Curve-Based Variable Cross-Section Magnetoelectric Antenna
by Gang Li, Naijun Zhao, Jiangang Li, Xin Ma, Shipeng Liu, Guoxuan Zhang, Shiren La, Yang Shi and Qiyuan Jiao
Materials 2026, 19(15), 3335; https://doi.org/10.3390/ma19153335 - 5 Aug 2026
Viewed by 162
Abstract
Conventional low-frequency antennas face a trade-off between miniaturization and radiation efficiency due to wavelength limitations. Although magnetoelectric (ME) antennas can overcome the electrical size constraint, existing designs lack structural tunability and performance enhancement. This paper proposes a Bézier curve-based (BCB) ME antenna that [...] Read more.
Conventional low-frequency antennas face a trade-off between miniaturization and radiation efficiency due to wavelength limitations. Although magnetoelectric (ME) antennas can overcome the electrical size constraint, existing designs lack structural tunability and performance enhancement. This paper proposes a Bézier curve-based (BCB) ME antenna that features a variable cross-section, introducing a shape tuning factor for precise geometric configuration. Using the lumped-mass method, the functional relationship between resonant frequency and the shape tuning factor is derived, establishing the theoretical basis for frequency tuning. A nonlinear multi-field coupled numerical simulation model is established for performance prediction. The BCB structure modifies internal stress distribution, enabling spatial reconstruction of magnetization modulation. The proposed design is validated by comparing the analytical model with our simulation results and literature-reported experimental data. Results show that the BCB design reduces resonant frequency and enhances converse ME (CME) coupling and far-field radiation without increasing material volume. Under clamped and free boundary conditions, the minimum resonant frequencies reach 7.2 kHz and 11.1 kHz, respectively, with CME coupling improved by 124% and 140%. When the shape tuning factor proposed in this work is set to 1/2, the proposed design degenerates into a traditional antenna with uniform cross-sections, which verifies the consistency of the established model. Full article
(This article belongs to the Special Issue Advanced Composite Materials for Next-Generation Electronic Devices)
►▼ Show Figures

Figure 1

14 pages, 31631 KB  
Article
Fabrication and Bonding Strength of Sn-Decorated MWCNT-Reinforced Sn-3.0Ag-0.5Cu Composite Solder Joints: Reflow vs. IPL Soldering
by DongGil Kang, HoGyeong Seong, JaeJun Yoon, MinJae Sung, JinHo Joo, JeongWon Yoon and SeungBoo Jung
Materials 2026, 19(11), 2188; https://doi.org/10.3390/ma19112188 - 22 May 2026
Viewed by 512
Abstract
The rapid advancement of microelectronic packaging has created a critical need for lead-free solder joints with enhanced mechanical and thermal reliability. This study introduces a novel approach to improve Sn-3.0Ag-0.5Cu (SAC 305) solder joints by incorporating Sn-decorated multiwalled carbon nanotubes (MWCNTs). To address [...] Read more.
The rapid advancement of microelectronic packaging has created a critical need for lead-free solder joints with enhanced mechanical and thermal reliability. This study introduces a novel approach to improve Sn-3.0Ag-0.5Cu (SAC 305) solder joints by incorporating Sn-decorated multiwalled carbon nanotubes (MWCNTs). To address the poor wettability and agglomeration of carbon nanotubes in molten solder, MWCNTs were functionalized and uniformly coated with ~70 nm Sn nanoparticles via electroless plating. Soldering was conducted using intense pulsed light (IPL), a rapid, energy-efficient heat source, and was compared with conventional reflow soldering. The study systematically investigated the influence of MWCNT content (0, 0.05, 0.1, and 0.2 wt.%) and IPL soldering conditions with pulse numbers: 27–36 for shear tests, and 30–42 for drop impact tests. IPL processing produced thinner Cu6Sn5 IMC layers than reflow soldering due to its shorter duration. The composite solder with 0.1 wt.% Sn-decorated MWCNTs achieved the highest density, superior thermal dissipation in LED packages, and maximum shear strength and drop impact resistance. These results demonstrate that optimizing Sn-MWCNT content, especially at 0.1 wt.%, and precisely controlling IPL energy can yield highly reliable, mechanically robust, and thermally efficient lead-free solder joints for advanced electronic packaging. Full article
(This article belongs to the Special Issue Advanced Composite Materials for Next-Generation Electronic Devices)
►▼ Show Figures

Graphical abstract

12 pages, 5380 KB  
Article
High-Stability Lithium Metal Batteries Enabled by AZO-Modified Separators
by Shaojiang Hong, Ruiqin Tan, Jia Li, Jinhua Huang and Weijie Song
Materials 2026, 19(7), 1429; https://doi.org/10.3390/ma19071429 - 3 Apr 2026
Viewed by 546
Abstract
The commercialization of lithium metal batteries is hindered by critical challenges such as uncontrollable lithium dendrite growth and interfacial instability. Constructing functional nanocoatings on separator surfaces represents an effective strategy to address these issues. In this study, a uniform aluminum-doped zinc oxide (AZO) [...] Read more.
The commercialization of lithium metal batteries is hindered by critical challenges such as uncontrollable lithium dendrite growth and interfacial instability. Constructing functional nanocoatings on separator surfaces represents an effective strategy to address these issues. In this study, a uniform aluminum-doped zinc oxide (AZO) modification layer was deposited on the separator via magnetron sputtering to enhance the electrochemical performance and safety of lithium metal batteries. The AZO layer combines the functions of a physical barrier and an interfacial regulator. On one hand, it effectively suppresses lithium dendrite penetration through the separator. On the other hand, its surface properties facilitate uniform lithium-ion transport and reduce the deposition overpotential. Experimental results demonstrate that the symmetric cells employing AZO-modified separators exhibit significantly reduced and stable lithium deposition overpotentials. In full cells assembled with a nickel cobalt aluminum (NCA) cathode, the system demonstrates higher specific capacity and notably extended cycle life compared to cells using unmodified polyethylene (PE) separators. This work proposes a practical strategy based on AZO-modified separators, offering a promising pathway toward the development of next-generation lithium metal batteries with high energy density and improved safety. Full article
(This article belongs to the Special Issue Advanced Composite Materials for Next-Generation Electronic Devices)
►▼ Show Figures

Figure 1

Review

Jump to: Research

21 pages, 2788 KB  
Review
Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances
by Taofei Pu, Xiaobo Li, Liuan Li and Jin-Ping Ao
Materials 2026, 19(11), 2205; https://doi.org/10.3390/ma19112205 - 23 May 2026
Viewed by 758
Abstract
As a representative wide-bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). For power electronics applications, and to take full advantage of the superiorities [...] Read more.
As a representative wide-bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). For power electronics applications, and to take full advantage of the superiorities of the GaN material, the normally off operation is required based on an AlGaN/GaN heterostructure. For a commercial approach, GaN HEMTs with a p-GaN gate have become a research hotspot. The characteristics of p-GaN gate HEMTs have a significant relationship with gate structure, especially the contact type on the p-GaN layer. In this review, the necessity of normally off operation and the advantages of adopting a p-GaN gate are elaborated, followed by the theory of achieving normally off operation by p-GaN and critical fabrication processes. The various gate structures are discussed, including metal gate, junction gate and hybrid gate structures on the p-GaN layer, to improve threshold voltage. Meanwhile, the methods required to optimize breakdown voltage and monolithically integrated technologies are also demonstrated. This review outlines the development and future trends of p-GaN gate HEMTs for power systems. Full article
(This article belongs to the Special Issue Advanced Composite Materials for Next-Generation Electronic Devices)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-4
Back to TopTop