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Energies 2017, 10(2), 153;

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Author to whom correspondence should be addressed.
Academic Editors: Alberto Castellazzi and Andrea Irace
Received: 28 November 2016 / Revised: 16 January 2017 / Accepted: 17 January 2017 / Published: 25 January 2017
(This article belongs to the Special Issue Semiconductor Power Devices)
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GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues. View Full-Text
Keywords: gallium nitride; transistor; p-GaN; normally-off; reliability; degradation gallium nitride; transistor; p-GaN; normally-off; reliability; degradation

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Meneghini, M.; Hilt, O.; Wuerfl, J.; Meneghesso, G. Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate. Energies 2017, 10, 153.

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