Silicon Carbide and Related Materials for Energy Saving Applications—Select Papers from E-MRS 2019—Symposium “Silicon Carbide and Related Materials for Energy Saving Applications"
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Energy Materials".
Deadline for manuscript submissions: closed (30 September 2019) | Viewed by 64586
Special Issue Editors
Interests: bulk crystal growth and the characterization of semiconductors
Interests: silicon carbide; growth; defects; MEMS; detectors
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
SYMPOSIUM X on Silicon Carbide & Related Materials for Energy Saving Applications is part of the Spring Meeting 2019 of the European Materials Research Society that takes place on 27–31 May 2019 in Nice, France (Deadline for abstract submission: 15 January 2019: www.european-mrs.com). This event is organized in conjunction with the International Conference on Advanced Materials (ICAM) of the International Union of Materials Research Societies (IUMRS). The scientific programme will highlight the latest advances in materials research at an international level, with a strong emphasis on interdisciplinary research in both fundamental and applied areas. The technical program will include 28 symposia organized into 6 topical clusters: Materials for Energy / Bio- and Soft Materials / Nano-functional Materials / 2 Dim Materials / Materials, Electronics and Photonics / Modelling and Characterizations
SYMPOSIUM X on Silicon Carbide & Related Materials focuses electronic materials for energy saving that are of particular interest to meet the accelerating demand of the global energy consumption. Engineering of the wide band-gap semiconductor silicon carbide plays a key role because it provides excellent physical properties that go beyond the semiconductor silicon.
Hot topics to be covered by the symposium:
- bulk growth and epitaxy of SiC
- defect characterization and defect engineering in SiC
- processing
- device fabrication (diodes, MOSFETs, bipolar switches, and others)
- power electronic systems (e.g., AC–DC, DC–DC converters, and others for e-drive, photovoltaics, and wind energy)
- interfaces of SiC to GaN and graphene, novel electro-optical applications
- related materials and novel applications for GaN, b-Ga2O3, and graphene.
Tentative list of invited speakers:
- Noboru Ohtani (KWANSEI, Japan), Review on bulk growth of SiC
- Michael Dudley (Stony Brook University, USA, Defect evaluation in bulk SiC
- Phillippe Gordignon (CNM, Spain), Devices and processing of SiC devices
- Haiyan Ou (DTU, Denmark), Novel optical applications—SiC LEDs and waveguides
- Fabrizio Roccaforte (CNM, Italy), Related materials—GaN processing and devices
- Ekaterine Chikoidze (Univ. Paris-Saclay, France), Related materials—Gallia: Surprising electronic properties
Prof. Dr. Peter Wellmann
Dr. Francesco LaVia
Prof. Dr. Mike Jennings
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- silicon carbide
- wide bandgap semiconductors
- energy saving
Benefits of Publishing in a Special Issue
- Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
- Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
- Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
- External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
- e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.
Further information on MDPI's Special Issue polices can be found here.