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Open AccessArticle

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

1
Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan
2
Department of Radiation Oncology, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan
3
The College of Engineering, Ming Chi University of Technology, Taishan 243, Taiwan
4
Materials & Electro-Optics Research Division, National Chung-Shan institute of Science & Technology, Longtan 325, Taiwan
5
Department of Digital Multimedia Technology, Vanung University, Chungli 32061, Taiwan
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(1), 25; https://doi.org/10.3390/cryst10010025
Received: 15 December 2019 / Revised: 3 January 2020 / Accepted: 3 January 2020 / Published: 6 January 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate contact to p-GaN/AlGaN/GaN high mobility transistor (HEMT) was first applied to improve the hole accumulation at the high gate voltage region. In addition, the ZrN interface is also beneficial for improving the Schottky barrier with low nitrogen vacancy induced traps. The features of Zr are low work function (4.05 eV) and high melting point, which are two key parameters with p-GaN Schottky contact at reversed voltage. Therefore, Zr/p-GaN interface exhibits highly potential for GaN-based switching power device applications. View Full-Text
Keywords: normally-off; HEMT; p-GaN gate; low work function; leakage current; breakdown voltage normally-off; HEMT; p-GaN gate; low work function; leakage current; breakdown voltage
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MDPI and ACS Style

Liu, C.-H.; Chiu, H.-C.; Huang, C.-R.; Chang, K.-J.; Chen, C.-T.; Hsueh, K.-P. Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal. Crystals 2020, 10, 25.

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