Recent Advances in III-Nitride Semiconductors

Dear Colleagues,

GaN and the group-III nitride family are typical wide bandgap semiconductors. The interest in group-III nitrides lies in their irreplaceable and efficient blue-UV luminescence capability. Recent progress in GaN-based material quality and device design relies on well-mastered techniques of material growth and the formation of desired structures with other elements. This offers a high possibility of creating high-quality materials and diverse functional devices. Among the ways that we can improve the internal quantum efficiency of radiative recombination, coupling with localized surface plasmons (LSPs) is a very promising method. When quantum wells (QWs) are placed in the evanescent field of LSPs, they can be strongly coupled with the LSPs under certain conditions. There may also be other energy induction mechanisms that improve the radiative recombination of the excitons locally from the LSP resonance—a topic which is still open. The resonance effects caused by photon–electron interaction are always the focus of attention in semiconductor optoelectronics. Determining how to effectively modulate photon behavior is another important issue in this area.

GaN is also a promising candidate for next-generation power electronic applications because of its outstanding material properties, but its potential is far from being realized. Regarding whether GaN can be competent in the field of ultra-high voltage (UHV, >10kV) applications, there is currently a huge controversy in the community, especially under the strong background of SiC in this field, although GaN has a farther limit than SiC based on the nature of the materials.

Therefore, we invite researchers to contribute to this Special Issue on “Recent Advances in III-Nitride Semiconductors”, covering a broad spectrum of topics from the study of materials, micro/nano structures, and novel functional devices to new applications in frontier fields.

The topics include but are not limited to:

• Growth of GaN-based materials and micro/nanostructures;
• Characterization of the materials and the heterostructures;
• GaN-based novel devices, including emission, detection, and power devices;
• Application and integration of the materials and novel devices in novel electronics and photonics

Prof. Dr. Peng Chen
Prof. Dr. Zhizhong Chen
Guest Editors

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