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Open AccessArticle

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea
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Micromachines 2019, 10(11), 723; https://doi.org/10.3390/mi10110723
Received: 14 September 2019 / Revised: 18 October 2019 / Accepted: 23 October 2019 / Published: 26 October 2019
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (VGS) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation. View Full-Text
Keywords: AlGaN/GaN; proton irradiation; time-dependent dielectric breakdown (TDDB); reliability; normally off AlGaN/GaN; proton irradiation; time-dependent dielectric breakdown (TDDB); reliability; normally off
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Keum, D.; Kim, H. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors. Micromachines 2019, 10, 723.

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