Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

Im, Ki-Sik; Siva Pratap Reddy, Mallem; Choi, Yeo Jin; Hwang, Youngmin; An, Sung Jin; Roh, Jea-Seung

doi:10.3390/cryst10080717

Open AccessArticle

Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

by

Ki-Sik Im

^1,*,

Mallem Siva Pratap Reddy

²,

Yeo Jin Choi

³,

Youngmin Hwang

¹,

Sung Jin An

³ and

Jea-Seung Roh

³

¹

Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Korea

²

School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea

³

Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea

^*

Author to whom correspondence should be addressed.

Crystals 2020, 10(8), 717; https://doi.org/10.3390/cryst10080717

Submission received: 30 July 2020 / Revised: 14 August 2020 / Accepted: 18 August 2020 / Published: 18 August 2020

(This article belongs to the Special Issue Nano/Micro and Bio-Inspired Materials on Wide-Bandgap-Semiconductor-Based Optoelectronic/Power Devices)

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Abstract

A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior into the gate insulator as well as the GaN buffer layer. At the on-state, the noise spectra in the fabricated GaN device were 1/f^γ properties with γ ≈ 1, which is explained by correlated mobility fluctuations (CMF). On the other hand, the device exhibited Lorentzian or generation-recombination (g-r) noises at the off-state due to deep-level trapping/de-trapping into the GaN buffer layer. The trap time constants (τ_i) calculated from the g-r noises became longer when the drain voltage increased up to 5 V, which was attributed to deep-level traps rather than shallow traps. The severe drain lag was also investigated from pulsed I-V measurement, which is supported by the noise behavior observed at the off-state.

Keywords: GaN; MISFET; normally-off; 1/f noise; g-r noise; correlated mobility fluctuations; pulse measurement

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MDPI and ACS Style

Im, K.-S.; Siva Pratap Reddy, M.; Choi, Y.J.; Hwang, Y.; An, S.J.; Roh, J.-S. Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs. Crystals 2020, 10, 717. https://doi.org/10.3390/cryst10080717

AMA Style

Im K-S, Siva Pratap Reddy M, Choi YJ, Hwang Y, An SJ, Roh J-S. Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs. Crystals. 2020; 10(8):717. https://doi.org/10.3390/cryst10080717

Chicago/Turabian Style

Im, Ki-Sik, Mallem Siva Pratap Reddy, Yeo Jin Choi, Youngmin Hwang, Sung Jin An, and Jea-Seung Roh. 2020. "Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs" Crystals 10, no. 8: 717. https://doi.org/10.3390/cryst10080717

APA Style

Im, K.-S., Siva Pratap Reddy, M., Choi, Y. J., Hwang, Y., An, S. J., & Roh, J.-S. (2020). Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs. Crystals, 10(8), 717. https://doi.org/10.3390/cryst10080717

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Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

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