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Open AccessArticle

Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

1
Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Korea
2
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
3
Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(8), 717; https://doi.org/10.3390/cryst10080717
Received: 30 July 2020 / Revised: 14 August 2020 / Accepted: 18 August 2020 / Published: 18 August 2020
A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior into the gate insulator as well as the GaN buffer layer. At the on-state, the noise spectra in the fabricated GaN device were 1/fγ properties with γ ≈ 1, which is explained by correlated mobility fluctuations (CMF). On the other hand, the device exhibited Lorentzian or generation-recombination (g-r) noises at the off-state due to deep-level trapping/de-trapping into the GaN buffer layer. The trap time constants (τi) calculated from the g-r noises became longer when the drain voltage increased up to 5 V, which was attributed to deep-level traps rather than shallow traps. The severe drain lag was also investigated from pulsed I-V measurement, which is supported by the noise behavior observed at the off-state. View Full-Text
Keywords: GaN; MISFET; normally-off; 1/f noise; g-r noise; correlated mobility fluctuations; pulse measurement GaN; MISFET; normally-off; 1/f noise; g-r noise; correlated mobility fluctuations; pulse measurement
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MDPI and ACS Style

Im, K.-S.; Siva Pratap Reddy, M.; Choi, Y.J.; Hwang, Y.; An, S.J.; Roh, J.-S. Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs. Crystals 2020, 10, 717.

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