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Open AccessArticle

Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability

1
Korea Multi-purpose Accelerator Complex, Korea Atomic Energy Research Institute, Gyeongju 38180, Korea
2
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(9), 1402; https://doi.org/10.3390/electronics9091402
Received: 3 August 2020 / Revised: 28 August 2020 / Accepted: 28 August 2020 / Published: 30 August 2020
(This article belongs to the Section Semiconductor Devices)
A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. Normally off operation with a high Vth of 2.3 V was obtained using a Cl2/BCl3-based recess etching process. The DMG structure was employed to improve current characteristics, which can be degraded by recess etching. The ID and gm of a DMG-based device with nickel (Ni)-aluminum (Al) were improved by 42.1% and 30.9%, respectively, in comparison to the performances of a single-metal-gate-based device with Ni because the DMG structure increased electron velocity in the channel region. This demonstrates that the DMG structure with a large work-function difference significantly improves the carrier transport efficiency. GaN-based recessed-gate MOSFETs based on the DMG structure hold promising potentials for high-efficiency power devices. View Full-Text
Keywords: GaN; recessed-gate; normally-off; dual-metal-gate structure GaN; recessed-gate; normally-off; dual-metal-gate structure
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Yoon, Y.J.; Lee, J.S.; Kim, D.-S.; Lee, J.-H.; Kang, I.M. Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability. Electronics 2020, 9, 1402.

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