Wide Bandgap Semiconductor (WBG) Microelectronics and Optoelectronic Devices

Dear Colleagues,

Wide-bandgap (WBG) semiconductor device technologies have become important topics of active research and development in the past two decades. The syndicating development of GaN- based materials systems has enabled tremendous development in energy-efficient systems utilizing GaN-based systems in solid-state lighting and power electronics. These commercial applications were supported by significant technology advancements in substrate preparation, epitaxial growth, device fabrication processing, as well as new insights into carrier transport mechanisms and light–matter interactions in advance polar semiconductors materials systems. In recent years, the development of new WBG materials systems has also opened up new opportunities of using WBG-based devices for high-temperature systems, ultra-high-voltage electronics, or ultraviolet (UV) optoelectronics, just to name a few. This Special Issue is intended to cover the latest development of WBG device technologies with a focus on the following topics:

1. Advanced WBG semiconductors based on nitride, oxide, carbide, or diamond materials systems: substrate technology, epitaxial growth of heterostructures, quantum-mechanical structures, or devices;
2. New device concepts using WBG semiconductors;
3. WBG electronic devices including but not limited to:
   1. Heterojunction field effect transistors or high-electron-mobility transistors;
   2. High-voltage power switches: rectifiers and transistors;
   3. High-frequency and millimeter-wave transistors and integrated circuits;
   4. Oxide-based electronic devices;
4. WBG optoelectronic devices including but not limited to:
   1. MicroLEDs: device fabrication and packaging technologies;
   2. UV photodetectors and imaging systems;
   3. UV emitters: light-emitting diodes and laser diodes for UVA, UVB, UVC, and EUV applications;
   4. WBG-integrated photonics;
5. Emerging nanoscale WBG devices:
   1. Low-dimension electronic and optoelectronic devices;
   2. Energy conversion devices, chemical catalysis devices;
   3. Quantum-scale phenomenon, micro-cavity enhanced phenomenon.

Prof. Dr. Shyh-Chiang Shen
Prof. Dr. Chien-Chung Lin
Prof. Dr. Chao-Hsin Wu
Guest Editors

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