Traversal time in the tunneling effect for ultrasonic waves in tapered waveguides is derived considering its analogy with quantum and electromagnetic wave tunneling. If, as traversal time, the so-called phase time is considered, the ultrasonic wave p...
The existence of fault zones in high-intensity earthquake areas has a serious impact on engineering structures, and the longitudinal response of tunnels crossing faults needs further in-depth research. To analyze the tangential contact effect between...
As tunnel excavation technology matures and the demand for transportation infrastructure continues to grow, several high-temperature tunnels have successively emerged in high geothermal areas. The construction of tunnels in high-temperature regions i...
This article addresses the problem of the tunnel effect with a gravitational potential. Specifically, the quasiclassical formulation is used here, and the Wentzel–Kramers–Brillouin approximation is applied to the potential. This allows th...
The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET to be experimentally demonstrated. To date, there is no literature available on the compact model of LTFET. In this paper, a compact model of LTFET is pres...
Fully or partially sealing the openings of tunnels to accelerate the self-extinction of fires provides a promising firefighting tactic to beat large fires in a long tunnel. So far, most experimental studies on the characteristics of fire with differe...
In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD)...
The L-shaped tunneling field-effect-transistor (LTFET) has been recently introduced to overcome the thermal subthreshold limit of conventional metal-oxide-semiconductor field-effect-transistors (MOSFET). In this work, the shortcomings of the LTFET wa...
The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET...
As an anhydrous fracturing method, liquid nitrogen jet fracturing technology is expected to become an efficient development method for shale gas resources. In order to explore the influence of the pressurization effect in the liquid nitrogen jet chan...
In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state curr...
In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltag...
In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a...
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to address these challenges, Ge-channel heterostructure TFET with Si...
The Lithium sulfur (Li-S) battery has a great potential to replace lithium-ion batteries due to its high-energy density. However, the “shuttle effect” of polysulfide intermediates (Li2S8, Li2S6, Li2S4, etc.) from the cathode can lead to r...
ESG concepts are regarded as a feasible method for enterprises to obtain a sustainable competitive advantage, but whether enterprises can spontaneously and proactively implement ESG concepts is the key to the sustainable development of ESG. Focusing...
Tunnel excavations near existing vertically loaded pile groups are frequently encountered in urban areas, and most available studies have focused on the additional deformation and stress induced in the pile group, lacking in consideration of the vari...
During the excavation process of a large-span variable cross-section of a tunnel, the deformation and stress characteristics of the surrounding rock supporting the structure are complex, and construction control is difficult. Based on an actual tunne...
The support pressure on an excavation surface is a critical factor in the ground deformation and excavation stability of a submarine shield tunnel. The shield tail gap and the disturbance zone of grouting behind the tunnel wall are also important inf...
Metal gate technology is one of the most important methods used to increase the low on-current of tunnel field-effect transistors (TFETs). However, metal gates have different work-functions for each grain during the deposition process, resulting in w...
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel in...
The aim of this study is to predict the influenced zone of deep excavation on adjacent tunnel displacement, evaluate the control effect of ground improvement, and give the optimal parameters for ground improvement. Based on the current research, a se...
Taking the Zigaojian tunnel, Hangzhou–Huangshan high-speed railway, China, as background, the rock mass structure effect on smooth blasting quality was studied. Four rock mass structures were determined on the basis of the information collected on th...
The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network. In this paper, the ESD characteristics of a traditiona...
Sudden variation of aerodynamic loads is a potential source of safety accidents of high-speed trains (HSTs). As a follow-up investigation on the aerodynamic response of a HST that enters a tunnel under crosswind environment, this paper focuses on the...
In this paper, a single-tier beam-spring-damping system and a two-tier beam-spring-damping system are adopted to simulate the FT (fixed track) and FST (floating slab track) system, respectively. The tunnel is modeled as an infinitely long Euler&mdash...
In this article, we propose a dual-gate dielectric face tunnel field-effect transistor (DGDFTFET) that can exhibit three different output voltage states. Meanwhile, according to the requirements of the ternary operation in the ternary inverter, four...
In this paper, long-period ground motion is used as the dynamic input to study the performance evolution of curved tunnel lining structure under seismic wave propagation excitation. This paper presents numerical studies on seismic waves, considering...
In this study, a frequency doubler that consists of a tunnel field-effect transistor (TFET) with dual pocket doping is proposed, and its operation is verified using technology computer-aided design (TCAD) simulations. The frequency-doubling operation...
This paper investigates the twisted wind effect on a typical super-tall building (500-m-tall square prism) by conducting pressure model wind tunnel tests. Two twisted wind fields (TWFs) with maximum yaw angles of approximately 30° and 20°, re...
This study presents an analytical elastic solution using the complex variable approach to determine the soil disturbance surrounding a shallow rectangular tunnel, taking into account the effect of gravity and considering the influence of grouting pre...
Based on the operating Chegongzhuang heat-supplying tunnel in Beijing, the reliability of its lining structure under the action of large thrust and thermal effect is studied. According to the characteristics of a heat-supplying tunnel service, a thre...
To give consideration to both chip density and device performance, an In0.53Ga0.47As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P+-pocket and an In0.52Al0.48As-block (VPB-EHBTFET) is introduced and systematic...
Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance a...
The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation. The simulation results show that the hump behavior degrades the subth...
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because o...
In order to solve the problem that the hole-forming rate of boreholes is low and it is difficult to reach the designed length when supporting a long pipe shed in loose stratum in a shallow buried section of a long-span tunnel, it is necessary to pre-...
A high-precision acceleration measurement system based on an ultra-sensitive tunnel magneto-resistance (TMR) sensor is presented in this paper. A “force–magnetic–electric” coupling structure that converts an input acceleration...
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted attention as promising next-generation electronic devices and sensors. In this study, we fabricated a novel nanoelectronic device based on a black-phosphorus-gated WSe2/SnSe...
This paper explores the implications of modifying the canonical Heisenberg commutation relations over two simple systems, such as the free particle and the tunnel effect generated by a step-like potential. The modified commutation relations include p...
In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solution...
Tunnel-structured Na0.44MnO2 (NMO) has been extensively studied as a potential cathode for sodium-ion batteries (SIBs) due to its favorable cycling endurance, cost-effectiveness, environmental benignity, and notable air-moisture stability. However, l...
Managing a major event in a road tunnel requires more resources than an open-air event. In the case of fire, the confined environment of road tunnels can represent a critical situation for both users and rescuers. The safety level of a tunnel can be...
Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect tra...
In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region. When drain-source voltage is applied at the NFBFET, the aligning between cond...
The dewatering of foundation pits leads to changes in the water level and effective stress within the surrounding strata. When existing tunnels are present within the dewatering influence zone, the impact of dewatering on these tunnels cannot be igno...
Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in numerical or compact TAT models applied to TFET devices. This work presents a...
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Based on computational fluid dynamics (CFD) and Realizable k-ε turbulence model, we established a numerical simulation method for wind and vapor-concentration fields of various external floating-roof tanks (EFRTs) (single, two, and four) and...
Tunnel construction in weak and fractured strata often faces risks such as tunnel face instability and large deformation of surrounding rock, which are difficult to effectively control using conventional support methods. Based on the engineering back...
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