This paper proposes a cross-scale simulation approach for evaluating the steady-state electrothermal performance of power MOSFETs at the device–package–heatsink–board (DPHB) level. A co-simulation framework is designed by employing...
This paper reviews sintered silver (s-Ag) die-attach materials for wide band gap (WBG) semiconductor packaging. WBG devices that die-attach with s-Ag have attracted a lot of attention owing to their low energy loss and high temperature operation capa...
The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for ass...
Silicone gel packaging for high-voltage power devices suffers severe insulation degradation under complex conditions involving sustained high voltages and steep pulses. DC superimposed pulse electric fields are the primary cause. However, existing re...
Chip bonding, an essential process in power semiconductor device packaging, commonly includes welding and nano-silver sintering. Currently, most of the research on chip bonding technology focuses on the thermal stress analysis of tin–lead solde...
New technological and packaging solutions are more and more being employed for power semiconductor switches in an automotive environment, especially the SiC- and GaN-based ones. In this framework, new front-end and back-end solutions have been develo...
Driven by the rapid development of deep-space exploration, artificial intelligence, and new energy vehicles, the integration density of power devices has been significantly improved, creating an urgent demand for electronic packaging interconnection...
In this paper, a 3.2–3.6 GHz two-stage Doherty power amplifier (PA) module is proposed for fifth-generation (5G) massive multiple-input multiple-output (MIMO) base stations. A detailed design method and procedure for a compact and low-loss comb...
A 3–5 μm Cu@Sn core-shell powder was prepared by chemical plating. Based on the mixture of this Cu@Sn and Ag NPs (nanoparticles), a soldering material for third-generation semiconductors was prepared. The joints prepared with this soldering...
This paper examines the practical challenges of simplified setups aimed at achieving high-power IGBTs’ IC–VCE curve. The slope of this I–V curve (which is defined as on-resistance RCE) and the point where the VCE–VGE curve visibly bends (threshold ga...
Micro-Raman spectroscopy was carried out to evaluate the localized residual stresses in commercial Gallium-Nitride-based devices, specifically, AlGaN/GaN high-electron-mobility Transistors (HEMTs) with a novel packaging design provided by STMicroelec...
The primary factor influencing semiconductor laser performance is photoelectric conversion efficiency. In this study, a heat sink structure in the form of a laminated DC-mount package was created using Solidworks 2018 in accordance with the semicondu...
Gallium oxide (Ga2O3) devices have shown remarkable potential for high-voltage, high-power, and low-loss power applications. However, thermal management of packaging for Ga2O3 devices becomes challenging due to the significant self-heating effect. In...
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in vario...
The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) po...
Delamination is a critical failure mode in power electronics packages that can significantly impact their reliability and performance, due to the large amounts of electrical power managed by the most recent devices which induce remarkable thermomecha...
Vacuum packaging of Micro-electro-mechanical system (MEMS) devices is a hot topic for its advantages of improving performance and reducing power consumption. In this paper, the physics package of a chip scale atomic clock (CSAC), as a typical kind of...
As the core carrier of information storage, a semiconductor memory device is a basic product with a large volume that is widespread in the integrated circuit industry. With the rapid development of semiconductor manufacturing processes and materials,...
With the advancement of Moore’s Law reaching its limits, advanced packaging technologies represented by Flip Chip (FC), Wafer-Level Packaging (WLP), System in Package (SiP), and 3D packaging have received significant attention. While advanced p...
The application of a neural stimulator to small animals is highly desired for the investigation of electrophysiological studies and development of neuroprosthetic devices. For this purpose, it is essential for the device to be implemented with the ca...
Young infants, children, and persons of any age who have cognitive limitations can be thought of as tyro learners, who are beginners in learning. For tyro learners, the self-produced mobility afforded by a powered mobility device offers opportunities...
A flat optical frequency comb (OFC) is generated by using a monolithic integrated electro-optic intensity and phase modulator fabricated on lithium niobite on insulator (LNOI) platform. The LNOI-based modulation chip consists of a push–pull Mac...
This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered t...
Junction temperature is considered a critical parameter that can directly affect the reliability and power handling capabilities of semiconductor devices. Effective thermal management, particularly under high-surge-current conditions, is therefore es...
Cu is widely employed in power device packaging materials owing to its excellent electrical and thermal conductivity, coupled with economic viability. Sintered Cu currently stands as one of the representative interconnect materials in power device pa...
Thermal transient testing (TTT) is an essential technique for characterizing electronic systems, including packaged devices, modules, and subassemblies. These tests serve two closely related purposes: first, they enable determination of peak operatin...
Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT pre...
This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examin...
In this paper, a novel power sintering technique, named fast hot-pressing sintering (FHP), which is able to achieve an ultrahigh heating rate similar to the spark plasma sintering (SPS) technique, but at a much lower cost, was applied to prepare a se...
In this study, we present a novel type of package, freeform-designed chip scale package (FDCSP), which has ultra-high light extraction efficiency and bat-wing light field. For the backlight application, mainstream solutions are chip-scale package (CS...
We developed a complete packaging strategy for a 128-channel optical phased array (OPA) for Light Detection and Ranging (LiDAR) applications operating at a 1550 nm wavelength. The process comprised three major steps: waveguide end-facet polishing, fi...
The extraordinary performance offered by cold atom-based clocks and sensors has the opportunity to profoundly affect a range of applications, for example in gravity surveys, enabling long term monitoring applications through low drift measurements. W...
A linear non-resonant kinetic energy harvester for implantable devices is presented. The design contains a metal platform with permanent magnets, two stators with three-dimensional helical coils for increased power generation, ball bearings, and a po...
The rapid development of artificial intelligence, microelectromechanical systems, and wearable electronics, together with the diverse energy demands from the Internet of Things (IoT), drives the miniaturization of microelectronic systems. This has cr...
This paper presents a shock detection device for packages in the supply chain. The primary purpose is to identify package damage during storage, delivery, and handling. Additionally, products are likely to be damaged if dropped from a certain height,...
Implantable electronic devices have been evolving at an astonishing pace, due to the development of fabrication techniques and consequent miniaturization, and a higher efficiency of sensors, actuators, processors and packaging. Implantable devices, w...
As the size of portable electronic devices, like tablet computers or smartphones, continues to decrease and their performance continues to increase, thermal management of the generated heat is becoming an ever more important issue. Phase change mater...
Conventional packaging and interconnection methods for two-terminal devices, e.g., diodes often involve expensive and bulky equipment, introduce parasitic effects and have reliability issues. In this study, we propose a built-in packaging method and...
On the background that the operating frequency of electronic devices tends to the radio frequency (RF) segment, a film bulk acoustic resonator (FBAR) filter is widely used in communication and military fields because of its advantages of high upper f...
This paper presents the results of experimental investigations illustrating the influence of the spectra of the light emitted by power LEDs on their thermal, photometric and radiometric parameters. The investigations were performed for six diodes emi...
Wide-bandgap (WBG) semiconductors are propelling a paradigm shift in advanced power electronics, offering functionality that includes higher-switching-frequency operation with improved efficiency and power density possibilities. Gallium nitride (GaN)...
This review examines recent advances in Gallium Nitride (GaN) power semiconductor devices and their growing impact on the development of high-efficiency power conversion systems. It explores innovations in device design, packaging methods, and gate-d...
Silicone gel, used in the packaging of high-voltage, high-power semiconductor devices, generates bubbles during the packaging process, which accelerates the degradation of its insulation properties. This paper establishes a testing platform for elect...
Power cycling tests (PCTs) assess the reliability of power devices by closely simulating their operating conditions. A PCT was performed on commercially available 1.2 kV 4H-SiC power metal–oxide–semiconductor field-effect transistors to o...
Micro-Electro-Mechanical Systems (MEMS) acoustic transducers are highly sophisticated devices with high sensing performance, small size, and low power consumption. To be applied in an implantable medical device, they require a customized packaging so...
This paper presents a broadband 3–3.7 GHz class-J Doherty power amplifier exploiting second harmonic tuning in the output network. Furthermore, the output impedance inverter is eliminated and its effect is embedded in the main device’s ou...
Within the project ‘ARIEL’ an electrical turbo compressor unit for fuel cell applications is deeply investigated. The necessary drive inverter is especially designed for high fundamental frequency and high switching frequency to cope with...
The aim of this study is to investigate the intravascular application of a micro-electro-mechanical system (MEMS) pressure sensor to directly measure the hemodynamic characteristics of a ventricular assist device (VAD). A bio- and hemo-compatible pac...
Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and...
Modern high power electronics devices consists of a large amount of integrated circuits for switching and supply applications. Beside the benefits, the technology exhibits the problem of an ever increasing power density. Nowadays, heat sinks that are...
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