Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review
1
School of Engineering, Huzhou University, Erhuan Road 759, Huzhou, China
2
Department of Electrical Engineering, Chalmers University of Technology, 313000 Göteborg, Sweden
*
Author to whom correspondence should be addressed.
†
These authors contributed equally to this work.
Micromachines 2019, 10(6), 406; https://doi.org/10.3390/mi10060406
Received: 14 April 2019
/
Revised: 4 June 2019
/
Accepted: 17 June 2019
/
Published: 19 June 2019
(This article belongs to the Special Issue SiC based Miniaturized Devices)
The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.
View Full-Text
Keywords:
power electronics; high-temperature converters; MEMS devices; SiC power electronic devices
▼
Show Figures
Figure 1
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
MDPI and ACS Style
Guo, X.; Xun, Q.; Li, Z.; Du, S. Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review. Micromachines 2019, 10, 406. https://doi.org/10.3390/mi10060406
AMA Style
Guo X, Xun Q, Li Z, Du S. Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review. Micromachines. 2019; 10(6):406. https://doi.org/10.3390/mi10060406
Chicago/Turabian StyleGuo, Xiaorui, Qian Xun, Zuxin Li, and Shuxin Du. 2019. "Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review" Micromachines 10, no. 6: 406. https://doi.org/10.3390/mi10060406
Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.
