A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives

Mistri, Susmita; Langpoklakpam, Catherine; Elangovan, Surya; Kuo, Hao-Chung

doi:10.3390/electronics14224430

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A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives

¹

International Ph.D. Program in Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

²

Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

³

Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan

^*

Author to whom correspondence should be addressed.

Electronics 2025, 14(22), 4430; https://doi.org/10.3390/electronics14224430 (registering DOI)

Submission received: 15 September 2025 / Revised: 31 October 2025 / Accepted: 10 November 2025 / Published: 13 November 2025

(This article belongs to the Special Issue Advances in Semiconductor GaN and Applications)

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Abstract

This review examines recent advances in Gallium Nitride (GaN) power semiconductor devices and their growing impact on the development of high-efficiency power conversion systems. It explores innovations in device design, packaging methods, and gate-driving strategies that have improved both performance and reliability. Key metrics such as switching speed, conduction losses, thermal management, and device robustness are analyzed, supported by reliability assessment techniques including Double-Pulse Testing (DPT). The discussion extends to current market dynamics and strategic industry initiatives that have catalyzed widespread GaN adoption. These combined insights highlight GaN’s role as a transformative material offering compact, efficient, and durable power solutions while identifying challenges that remain for broader implementation across diverse industries.

Keywords: wide bandgap semiconductors; GaN; high-efficiency power conversion; switching speed; thermal management; reliability of GaN HEMTs; power electronics

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MDPI and ACS Style

Mistri, S.; Langpoklakpam, C.; Elangovan, S.; Kuo, H.-C. A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives. Electronics 2025, 14, 4430. https://doi.org/10.3390/electronics14224430

AMA Style

Mistri S, Langpoklakpam C, Elangovan S, Kuo H-C. A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives. Electronics. 2025; 14(22):4430. https://doi.org/10.3390/electronics14224430

Chicago/Turabian Style

Mistri, Susmita, Catherine Langpoklakpam, Surya Elangovan, and Hao-Chung Kuo. 2025. "A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives" Electronics 14, no. 22: 4430. https://doi.org/10.3390/electronics14224430

APA Style

Mistri, S., Langpoklakpam, C., Elangovan, S., & Kuo, H.-C. (2025). A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives. Electronics, 14(22), 4430. https://doi.org/10.3390/electronics14224430

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A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives

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