Degradation Factors and Mechanisms of Silicone Gel in Power Device Packaging Insulation Under DC Superimposed Pulse Electric Fields
Abstract
1. Introduction
2. Results and Discussion
2.1. Electrical Tree Experiment
2.1.1. At the Same Pulse Rise Time, the Pulse Variation Value Has the Greatest Impact, Followed by the Superimposed DC Amplitude, and Finally the Duty Cycle
2.1.2. The Rise Time of the Pulse Has a Greater Impact than the Pulse Variation Value, Making the Pulse Voltage Slew Rate the Most Critical Influencing Factor
2.2. Charge Vibration Experiment
2.2.1. The Impact of Pulse Voltage Slew Rate (Pulse Voltage Slope) Is Greater than That of Superimposed DC Amplitude, and the Impact of Superimposed DC Amplitude Is Greater than That of Duty Cycle
2.2.2. Theoretical Analysis of Forces Acting on Charges
2.3. Influence Chain: Influencing Factors Change—Forces Application on Charges—Charges Dynamic Behaviors—Electrical Tree Formation and Silicone Gel Insulation Degradation
2.3.1. From Influencing Factors Change to Forces Application on Charges
2.3.2. From Forces Application on Charges to Charges Dynamic Behaviors
2.3.3. From Charges Dynamic Behaviors to Electrical Tree Formation and Silicone Gel Insulation Degradation
2.3.4. Fundamental Mechanistic Differences Between Pulse-Induced Charge Vibration and Conventional AC/DC Electrical Stresses
2.4. Comparative Analysis of the Influence Mechanisms of Pulse Voltage Slew Rate, Superimposed DC Amplitude, and Duty Cycle
2.5. Practical Engineering Implications
3. Conclusions
- (1)
- Using the controlled variables method, the effects of pulse variation value, superimposed DC amplitude, and duty cycle on the degradation of silicone gel insulation were quantified and compared. The results indicate that, with the pulse rise time held constant, pulse variation value has the greatest impact on silicone gel insulation degradation, followed by superimposed DC amplitude, while duty cycle has the least effect. The increase in superimposed DC amplitude and duty cycle are reflected as an increase in static charge accumulation.
- (2)
- It is known that when the pulse rise time remains constant, the pulse variation value has the greatest impact on silicone gel insulation degradation. Furthermore, the pulse rise time exerts a greater influence on silicone gel insulation degradation than the pulse variation value. The pulse voltage slew rate is precisely composed of both the pulse variation value and the rise time. Therefore, the most critical factor affecting silicone gel insulation degradation is the pulse voltage slew rate. An increase in the pulse voltage slew rate is reflected as intensified dynamic behaviors of charge at the pulse edge.
- (3)
- Increased voltage slew rate, superimposed DC amplitude, and duty cycle alter the force state of charges, thereby modifying charge accumulation and dynamic behaviors. This ultimately influences the formation of electrical tree and the insulating degradation of the silicone gel materials. Within this influence chain, the voltage slew rate reflects the intense dynamic behaviors of charges, while the superimposed DC amplitude and duty cycle reflect the gradual static accumulation of charges. The impact of dynamic charge behaviors is greater than that of static charge accumulation. The microscopic mechanism of silicone gel material insulation failure is reasonably explained through this influence chain, and the pulse voltage slew rate is further identified as the most critical influencing factor.
4. Materials and Methods
4.1. Electrical Tree Experiment
4.1.1. Sample Selection and Preparation
4.1.2. Experimental Platform
4.1.3. Selection of Quantitative Parameters
- (1)
- Length l (um): The final length of the electrical tree along the needle direction when a voltage is applied for 1 h or immediately before breakdown occurs.
- (2)
- Growth rate v (um/min): The start time for the electrical tree growth is recorded as (min). If no breakdown occurs, the end time is set to 60 min, and the electrical tree growth time is calculated as: if breakdown occurs, the end time is set to the breakdown time (min), and the electrical tree growth time is calculated as. From this, the electrical tree growth rate can be determined as.
- (3)
- Number of electrical tree initiation: The number of pins exhibiting treeing phenomena (including breakdown) within one hour of voltage application.
- (4)
- Initiation time (min): The time from the instant the voltage is applied until each needle exhibits treeing.
- (5)
- Number of electrical tree that broken down: The number of pins that broke down within one hour of voltage application.
- (6)
- Breakdown time (min): The time interval from the instant voltage is applied until breakdown occurs in each needle.
4.1.4. Experiment Preparation
4.2. Charge Vibration Experiment
4.2.1. Sample Selection and Preparation
4.2.2. Experimental Platform
4.2.3. Selection of Quantitative Parameters
4.2.4. Experimental Preparation
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
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Wu, Z.; He, D. Degradation Factors and Mechanisms of Silicone Gel in Power Device Packaging Insulation Under DC Superimposed Pulse Electric Fields. Gels 2026, 12, 274. https://doi.org/10.3390/gels12040274
Wu Z, He D. Degradation Factors and Mechanisms of Silicone Gel in Power Device Packaging Insulation Under DC Superimposed Pulse Electric Fields. Gels. 2026; 12(4):274. https://doi.org/10.3390/gels12040274
Chicago/Turabian StyleWu, Zichen, and Dongxin He. 2026. "Degradation Factors and Mechanisms of Silicone Gel in Power Device Packaging Insulation Under DC Superimposed Pulse Electric Fields" Gels 12, no. 4: 274. https://doi.org/10.3390/gels12040274
APA StyleWu, Z., & He, D. (2026). Degradation Factors and Mechanisms of Silicone Gel in Power Device Packaging Insulation Under DC Superimposed Pulse Electric Fields. Gels, 12(4), 274. https://doi.org/10.3390/gels12040274
