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Micromachines
Special Issues
Wide-Bandgap Semiconductor Devices: Materials, Fabrication, and Applications
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Wide-Bandgap Semiconductor Devices: Materials, Fabrication, and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: 31 December 2024 | Viewed by 647

Special Issue Editors

Prof. Dr. Junshuai Xue

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Guest Editor
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an 710017, China
Interests: GaN heterostructure; transition metal nitride electronic devices; GaN electronic devices
Dr. Xi Jiang

E-Mail Website
Guest Editor
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an 710017, China
Interests: power semiconductor device; device reliability; power module package
Dr. Song Yuan

E-Mail Website
Guest Editor
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an 710017, China
Interests: power semiconductor devices; wide-bandgap semiconductor devices; semiconductor device fabrication; semiconductor device reliability

Special Issue Information

Dear Colleagues,

Semiconductor devices play a pivotal role in modern electronics, facilitating the advancement of increasingly intricate and compact electronic systems. These systems are now ubiquitous across every facet of contemporary information society. In order to cater to diverse application requirements, modern semiconductor devices utilize a variety of materials, such as silicon (Si), gallium arsenide (GaAs), germanium (Ge), silicon carbide (SiC), and diamond. Moreover, there is a continual escalation in integration levels, accompanied by a corresponding increase in the complexity of fabrication processes. The principal factors shaping the trajectory of modern semiconductor device development include the intended application domains, the selection of materials for device fabrication, and the meticulous engineering of fabrication processes.

This Special Issue aims to provide a comprehensive overview of the latest advancements in emerging semiconductor devices, with a particular focus on the materials utilized, fabrication techniques employed, and the wide range of applications that these devices enable. Researchers and academics are invited to contribute original research papers and review articles that showcase innovative approaches and breakthroughs in the field of semiconductor devices, helping to pave the way for the next generation of electronic technologies.

Prof. Dr. Junshuai Xue
Dr. Xi Jiang
Dr. Song Yuan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide-bandgap semiconductor materials and devices
  • power semiconductor devices
  • semiconductor performance characterization
  • power electronics
  • semiconductor device fabrication
  • semiconductor device reliability

Published Papers (2 papers)

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Research

11 pages, 1913 KiB  
Article
Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier
by Zhuang Zhao, Yang Liu, Peixian Li, Xiaowei Zhou, Bo Yang and Yingru Xiang
Micromachines 2024, 15(6), 762; https://doi.org/10.3390/mi15060762 - 6 Jun 2024
Viewed by 245
Abstract
In this study, we propose a polarized electron blocking layer (EBL) structure using AlxGa1−xN/AlxGa1−xN to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). Our findings indicate that this polarized EBL [...] Read more.
In this study, we propose a polarized electron blocking layer (EBL) structure using AlxGa1−xN/AlxGa1−xN to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). Our findings indicate that this polarized EBL structure significantly improves IQE compared to conventional EBLs. Additionally, we introduce an electric-field reservoir (EFR) optimization method to maximize IQE. Specifically, optimizing the polarized EBL structure of AlxGa1−xN/AlxGa1−xN enhances the hole drift rate, resulting in an IQE improvement of 19% and an optical output power increase of 186 mW at a current of 210 mA. Full article
(This article belongs to the Special Issue Wide-Bandgap Semiconductor Devices: Materials, Fabrication, and Applications)
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12 pages, 1692 KiB  
Article
A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study
by Song Yuan, Zhaoheng Yan, Yanzuo Li, Ying Wang, Qifan Liu, Xinbin Zhan, Xi Jiang, Yanjing He and Xiaowu Gong
Micromachines 2024, 15(6), 759; https://doi.org/10.3390/mi15060759 - 5 Jun 2024
Viewed by 226
Abstract
A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner drift region under the same [...] Read more.
A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner drift region under the same breakdown voltage. In the on state, an electron accumulation layer is formed along the SIPOS, which can increase the injection level of the “PiN region” in the device, and the carrier concentration in the drift region is also increased due to the charge balance effect. Moreover, the SIPOS-IGBT can achieve a quick and thorough depletion in the drift region during the turn-off transient, which can greatly reduce the turn-off loss of the SIPOS-IGBT. These advantages improve the tradeoff between the conduction and switching losses. According to the simulation results, the SIPOS-IGBT obtained a 58% lower turn loss than that of a field-stop (FS) IGBT and 30% lower than an HK-IGBT with the same on-state voltage. Full article
(This article belongs to the Special Issue Wide-Bandgap Semiconductor Devices: Materials, Fabrication, and Applications)
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