Wide-Bandgap Semiconductor Devices: Materials, Fabrication, and Applications
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 31 December 2024 | Viewed by 4490
Special Issue Editors
Interests: GaN heterostructure; transition metal nitride electronic devices; GaN electronic devices
Interests: power semiconductor device; device reliability; power module package
Interests: power semiconductor devices; wide-bandgap semiconductor devices; semiconductor device fabrication; semiconductor device reliability
Special Issue Information
Dear Colleagues,
Semiconductor devices play a pivotal role in modern electronics, facilitating the advancement of increasingly intricate and compact electronic systems. These systems are now ubiquitous across every facet of contemporary information society. In order to cater to diverse application requirements, modern semiconductor devices utilize a variety of materials, such as silicon (Si), gallium arsenide (GaAs), germanium (Ge), silicon carbide (SiC), and diamond. Moreover, there is a continual escalation in integration levels, accompanied by a corresponding increase in the complexity of fabrication processes. The principal factors shaping the trajectory of modern semiconductor device development include the intended application domains, the selection of materials for device fabrication, and the meticulous engineering of fabrication processes.
This Special Issue aims to provide a comprehensive overview of the latest advancements in emerging semiconductor devices, with a particular focus on the materials utilized, fabrication techniques employed, and the wide range of applications that these devices enable. Researchers and academics are invited to contribute original research papers and review articles that showcase innovative approaches and breakthroughs in the field of semiconductor devices, helping to pave the way for the next generation of electronic technologies.
Prof. Dr. Junshuai Xue
Dr. Xi Jiang
Dr. Song Yuan
Guest Editors
Manuscript Submission Information
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Keywords
- wide-bandgap semiconductor materials and devices
- power semiconductor devices
- semiconductor performance characterization
- power electronics
- semiconductor device fabrication
- semiconductor device reliability
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