Special Issue "Electrothermal Effects in Semiconductor Devices/Circuits"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 31 July 2021.

Special Issue Editor

Prof. Dr. Vincenzo d'Alessandro
Website
Guest Editor
Department of Electrical Engineering and Information Technology, University Federico II, via Claudio 21, 80125 Naples, Italy
Interests: bipolar transistors; power devices; photovoltaics; microelectronics; semiconductor devices
Special Issues and Collections in MDPI journals

Special Issue Information

Dear Colleagues,

Although traditionally associated with power transistors and modules, today, electrothermal effects plague semiconductor devices, circuits, and systems in a large variety of technologies and applications, thus affecting their functionality and reliability. This is a side effect of strategies conceived to boost electrical performance, namely, (i) adoption of high-electron-mobility materials suffering from poor thermal conductivity (e.g., GaAs), (ii) fabrication of shallow/deep poly/oxide trenches and buried oxide layers to reduce parasitics and alleviating cross-talk, (iii) lateral scaling to increase the integration level, (iv) current density growth to obtain better frequency behavior. As a result, electrothermal effects need to be accounted for and counteracted at the earliest design stage in semiconductor companies to avoid costly time-to-market delays, and many groups are working on this topical issue in both academia and industry.

The scope of this Special Issue is to gather papers dealing with the analysis of electrothermal effects and approaches to mitigate them and improve the thermal ruggedness. The manuscripts should be focused on—but not limited to—experimental characterization, modeling techniques (including model-order reduction), as well as low-resource-demanding, yet accurate enough, simulation methods where electrical and thermal problems are concurrently solved.

Prof. Dr. Vincenzo d'Alessandro
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1500 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • electrothermal modeling
  • electrothermal simulation
  • heat propagation
  • thermal coupling
  • thermal impedance

Published Papers (3 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

Open AccessArticle
Thermal, Photometric and Radiometric Properties of Multi-Color LEDs Situated on the Common PCB
Electronics 2020, 9(10), 1672; https://doi.org/10.3390/electronics9101672 - 13 Oct 2020
Abstract
This paper presents the results of experimental investigations illustrating the influence of the spectra of the light emitted by power LEDs on their thermal, photometric and radiometric parameters. The investigations were performed for six diodes emitting white or monochromatic light of different spectra. [...] Read more.
This paper presents the results of experimental investigations illustrating the influence of the spectra of the light emitted by power LEDs on their thermal, photometric and radiometric parameters. The investigations were performed for six diodes emitting white or monochromatic light of different spectra. Each of these diodes was produced by the same manufacturer, mounted in the same package and the tested devices were soldered to the common PCB. In the paper, the manner and set-ups making possible measurements of self and transfer transient thermal impedances, illuminance and the surface power density of the light emitted by the tested devices are described. Selected results of measurements are shown and discussed. These results prove that the spectra of the emitted light influence self-transient thermal impedances of the considered devices and transfer transient thermal impedances between some pairs of these devices. Additionally, it is proved that thermal couplings between the tested diodes strongly influence their junction temperature and the surface power density of the emitted radiation. Full article
(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)
Show Figures

Figure 1

Open AccessArticle
Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation
Electronics 2020, 9(9), 1365; https://doi.org/10.3390/electronics9091365 - 23 Aug 2020
Cited by 1
Abstract
In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent [...] Read more.
In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temperature model of part-I by introducing a parameter to account for the upward heat flow through BEOL. Accordingly the coupling coefficient models for bipolar transistors with and without trench isolations are updated. The resulting modeling approach takes as inputs the dimensions of emitter fingers, shallow and deep trench isolation, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are first validated against 3D TCAD simulations including the effect of BEOL followed by validation against measured data obtained from state-of-art multifinger SiGe HBTs of different emitter geometries. Full article
(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)
Show Figures

Figure 1

Open AccessArticle
Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development
Electronics 2020, 9(9), 1333; https://doi.org/10.3390/electronics9091333 - 19 Aug 2020
Cited by 2
Abstract
In this part, we propose a step-by-step strategy to model the static thermal coupling factors between the fingers in a silicon based multifinger bipolar transistor structure. First we provide a physics-based formulation to find out the coupling factors in a multifinger structure having [...] Read more.
In this part, we propose a step-by-step strategy to model the static thermal coupling factors between the fingers in a silicon based multifinger bipolar transistor structure. First we provide a physics-based formulation to find out the coupling factors in a multifinger structure having no-trench isolation (cij,nt). As a second step, using the value of cij,nt, we propose a formulation to estimate the coupling factor in a multifinger structure having only shallow trench isolations (cij,st). Finally, the coupling factor model for a deep and shallow trench isolated multifinger device (cij,dt) is presented. The proposed modeling technique takes as inputs the dimensions of emitter fingers, shallow and deep trench isolations, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are validated against 3D TCAD simulations of multifinger bipolar transistors with and without trench isolations. Geometry scalability of the model is also demonstrated. Full article
(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)
Show Figures

Figure 1

Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Planned paper 1:

Soft failure mode of SiC power MOSFETs in short-circuit: device characterization and system level exploitation

Alberto Castellazzi, Kyoto University of Advanced Science, Japan

Frederic Richardeau, LAPLACE-University Toulouse-CNRS, France

Abstract: This paper studies a particular short-circuit failure mechanism of silicon carbide (SiC) power MOSFETs in short circuit, exhibiting a safe fail-to-open-circuit type signature. The results base on extensive experimental testing, including device functional and structural electro-thermal characterisation. It is shown that the soft failure feature is associated with degradation and eventual partial shorting of the gate-source structure.  Moreover, partial recovery effects are observed, which indicate a realistic new option for deployment in the application to yield enhanced system level robustness and system-level hopping-home operational mode capability, of great importance in a number of reliability critical domains, such as, for instance, transportation. Some ideas for the implementation of such solutions in real power converters are introduced.

Planned Paper 2:

Influence of selected factors on thermal parameters of components of forced cooling systems of electronic devices

Krzysztof Posobkiewicz, Krzysztof Górecki

Gdynia Maritime University, Department of Marine Electronics, Morska 81-87, 81-225 Gdynia, Poland

Abstract: The paper presents some results of investigations of modelling components of forced cooling system dedicated to electronic devices. Different structures of such system including thermal interfaces, Peltier’s modules, heat-sinks and funs are considered. Analytical formulas describing dependences of thermal resistance of components of considered cooling systems on power dissipated in cooled electronic device, current feeding Peltier’s module and current feeding the fun. Compact thermal model of such systems are formulated. This model takes into account multi path heat transfer and it makes possible to compute waveforms of internal device temperature at selected waveforms of power dissipated in this device. Correctness of the proposed model are verified experimentally in wide range of power dissipated in electronic devices operating in different configurations of the used cooling system.

Keywords: thermal parameters; modelling; forced cooling systems; compact thermal model;

Planned Paper 3:

Influence of the metal-semiconductor interface model on power conservation principle in a simulation of bipolar devices

Janusz Wozny * , Zbigniew Lisik and Jacek Podgorski

Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, Wolczanska 211/215, PL90-924 Lodz, Poland; [email protected] (Z.L); [email protected] (J.P.);

Abstract: The purpose of the study is to present a proper approach that ensures the energy conservation principle during electrothermal simulations of bipolar devices. The simulations are done using Sentaurus TCAD software from Synopsys. We focus on the drift-diffusion model that is still widely used for power device simulations. We present that, without properly designed contact(metal)-semiconductor interface, the energy conservation is not obeyed when bipolar devices are considered. This should not be accepted for power semiconductor structures, where thermal design issues are of most importance. The correct model of the interface is achieved by proper doping and mesh of the contact-semiconductor region. The discussion is illustrated by the simulation results obtained for GaN p-n structure, additionally, Si and SiC structures are also recalled. The results are also supported by the theoretical analysis of interface physics.

Keywords: drift-diffusion; electrothermal; power conservation; metal-semicondcutor interface; GaN; bipolar

Back to TopTop